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EP1498401

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Extract from the Register of European Patents

EP About this file: EP1498401

EP1498401 - SILICON BASED SUBSTRATE WITH A CTE COMPATIBLE LAYER ON THE SUBSTRATE [Right-click to bookmark this link]
Former [2005/03]	SILICON BASED SUBSTRATE WITH A CTE COMPATIBLE LAYER ON THE SUBSTANCE
	[2010/27]
Status	The application is deemed to be withdrawn Status updated on 06.11.2015 Database last updated on 25.09.2024
Most recent event Tooltip	06.11.2015	Application deemed to be withdrawn	published on 09.12.2015 [2015/50]
Applicant(s)	For all designated states United Technologies Corporation 1 Financial Building 1 Financial Plaza Hartford Connecticut 06101 / US
	[N/P]
Former [2005/03]	For all designated states United Technologies Corporation 1 Financial Building, 1 Financial Plaza Hartford, Connecticut 06101 / US
Inventor(s)	01 / Sun, Ellen Y. 17 Summerwind Drive South Windsor CT 06074 / US
	02 / Eaton, Harry E. 391 Perrin Road Woodstock CT 06281 / US
	[2005/03]
Representative(s)	Hall, Matthew Benjamin Dehns St Bride's House 10 Salisbury Square London EC4Y 8JD / GB
	[N/P]
Former [2005/03]	Hall, Matthew Benjamin Frank B. Dehn & Co. 179 Queen Victoria Street London EC4V 4EL / GB
Application number, filing date	04021906.5	17.12.2002
	[2005/03]
Priority number, date	US20010034677	19.12.2001 Original published format: US 34677
	[2005/03]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP1498401
	Date:	19.01.2005
	Language:	EN
	[2005/03]
	Type:	A3 Search report
	No.:	EP1498401
	Date:	06.04.2005
	[2005/14]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	16.02.2005
Classification	IPC:	C04B41/87, C04B41/89, C23C4/10, F01D5/28	[2005/03]
	CPC:	C04B41/009 (EP,US); C04B41/87 (KR); B32B18/00 (KR); C04B41/5051 (EP,US); C04B41/89 (KR); C23C28/04 (EP,US); (+) C23C28/048 (EP,US); C23C30/00 (EP,US); C23C4/10 (KR); C23C4/11 (EP,US); F01D5/288 (EP,US); F05D2230/90 (EP,US); F05D2300/222 (EP,US); F05D2300/50211 (EP,US); F05D2300/611 (EP,US) (-)
	C-Set:	C04B41/009, C04B35/565 (US,EP); C04B41/009, C04B35/584 (US,EP); C04B41/009, C04B35/597 (EP,US); C04B41/009, C04B35/806 (EP); (+) C04B41/5051, C04B41/4527, C04B41/5024 (US,EP); C04B41/5051, C04B41/4527, C04B41/5027 (EP,US) (-)
Designated contracting states	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, SI, SK, TR [2005/03]
Title	German:	SILIZIUM ENTHALTENDES SUBSTRAT MIT BESCHICHTUNG MIT ANGEPASSTEM THERMISCHEM AUSDEHNUNGSKOEFFIZIENTEN	[2005/03]
	English:	SILICON BASED SUBSTRATE WITH A CTE COMPATIBLE LAYER ON THE SUBSTRATE	[2010/27]
	French:	SUBSTRAT A BASE DE SILICIUM MUNI D'UNE COUCHE A DILATATION THERMIQUE ADAPTEE	[2005/03]
	Former [2005/03]	SILICON BASED SUBSTRATE WITH A CTE COMPATIBLE LAYER ON THE SUBSTANCE
Examination procedure	29.09.2005	Examination requested [2005/47]
	09.03.2006	Despatch of a communication from the examining division (Time limit: M04)
	14.07.2006	Reply to a communication from the examining division
	23.04.2009	Despatch of a communication from the examining division (Time limit: M04)
	26.08.2009	Reply to a communication from the examining division
	15.01.2010	Despatch of a communication from the examining division (Time limit: M04)
	26.03.2010	Reply to a communication from the examining division
	09.07.2010	Despatch of a communication from the examining division (Time limit: M06)
	08.02.2011	Reply to a communication from the examining division
	01.07.2015	Application deemed to be withdrawn, date of legal effect [2015/50]
	30.07.2015	Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2015/50]
Parent application(s) Tooltip	EP02258674.7 / EP1323689
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20020258674) is 02.03.2006
Request for further processing for:	The application is deemed to be withdrawn due to failure to reply to the examination report
	08.02.2011	Request for further processing filed
	08.02.2011	Full payment received (date of receipt of payment) Request granted
	25.02.2011	Decision despatched
Fees paid	Renewal fee
	23.12.2004	Renewal fee patent year 03
	27.12.2005	Renewal fee patent year 04
	27.12.2006	Renewal fee patent year 05
	24.12.2007	Renewal fee patent year 06
	29.12.2008	Renewal fee patent year 07
	23.12.2009	Renewal fee patent year 08
	28.12.2010	Renewal fee patent year 09
	12.12.2011	Renewal fee patent year 10
	11.12.2012	Renewal fee patent year 11
	12.12.2013	Renewal fee patent year 12
	Penalty fee
	Additional fee for renewal fee
	31.12.2014	13 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]US4252860 (BRENNAN JOHN J, et al) [X] 1,6-8 * claim 5 *;
		[X]US5008149 (TAGA YASUNORI [JP], et al) [X] 1-6 * examples 12,14 *;
		[X]US6086990 (SUMINO HIROYASU [JP], et al) [X] 1-4,6-8 * examples 3-6,8,9,11-14,17 *;
		[X]EP1044943 (UNITED TECHNOLOGIES CORP [US], et al) [X] 1,2,6-8 * claims 1,7,8,16,18,22 *;
		[X]EP1044944 (UNITED TECHNOLOGIES CORP [US], et al) [X] 1,2,6-8 * claims 1,6,10,13,14 *;
		[X] - OKUWADA K ET AL, "Preparation of Pb(Mg1/3Nb2/3)O3 thin film by sol-gel method", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS) JAPAN, (1989), vol. 28, no. 7, ISSN 0021-4922, pages L1271 - L1273, XP000073559 [X] 1-4,6-8 * figure 6 * DOI: http://dx.doi.org/10.1143/JJAP.28.L1271
		[X] - HIRANO S-I ET AL, "PREPARATION OF POTASSIUM TANTALATE NIOBATE BY SOL-GEL METHOD", JOURNAL OF THE AMERICAN CERAMIC SOCIETY, AMERICAN CERAMIC SOCIETY. COLUMBUS, US, (19920601), vol. 75, no. 6, ISSN 0002-7820, pages 1701 - 1704, XP000651527 [X] 1-4,6-8 * abstract * * page L1271, column L * DOI: http://dx.doi.org/10.1111/j.1151-2916.1992.tb04252.x
	by applicant	EP1044943
		- OKUWADA K ET AL., "Preparation of Pb (Mgi/3 Nb2/3) 03 Thin Film by Sol-Gel Method", JAPANESE JOURNAL OF APPLIED PHYSICS, (1989), vol. 28, no. 2, page L1271
		- HIRANO S-I ET AL., "Preparation of Potassium Tantalate Niobate by Sol-Gel Method", JOURNAL OF THE AMERICAN CERAMIC SOCIETY, (1992), vol. 75, doi:doi:10.1111/j.1151-2916.1992.tb04252.x, page 1701, XP000651527 DOI: http://dx.doi.org/10.1111/j.1151-2916.1992.tb04252.x

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