EP1612851 - A method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 07.01.2011 Database last updated on 19.07.2024 | Most recent event Tooltip | 19.10.2012 | Lapse of the patent in a contracting state New state(s): TR | published on 21.11.2012 [2012/47] | Applicant(s) | For all designated states Xycarb Ceramics B.V. Zuiddijk 4 5705 CS Helmond / NL | [2006/01] | Inventor(s) | 01 /
Van Munster, Marcus Gerardus Langestraat 63 5038SC Tilburg / NL | [2009/43] |
Former [2006/01] | 01 /
Van Munster, Marcus Gerardus Langestraat 63 5038 SC Tilburg / NL | Representative(s) | Valkonet, Rutger, et al Algemeen Octrooi- en Merkenbureau P.O. Box 645 5600 AP Eindhoven / NL | [N/P] |
Former [2006/01] | Valkonet, Rutger, et al Algemeen Octrooi- en Merkenbureau P.O. Box 645 5600 AP Eindhoven / NL | Application number, filing date | 04076897.0 | 30.06.2004 | [2006/01] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1612851 | Date: | 04.01.2006 | Language: | EN | [2006/01] | Type: | B1 Patent specification | No.: | EP1612851 | Date: | 03.03.2010 | Language: | EN | [2010/09] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.11.2004 | Classification | IPC: | H01L21/04, H01L29/24 | [2006/01] | CPC: |
C04B41/009 (EP);
H01L21/302 (KR);
C04B41/5346 (EP);
C04B41/91 (EP);
H01L21/673 (EP)
| C-Set: |
C04B41/009, C04B35/565 (EP)
| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR [2006/01] | Title | German: | Verfahren zur Oberflächenbehandlung eines Metallcarbid-Substrates zur Verwendung in Halbleiterherstellungverfahren und ein Metallcarbid-Substrat an sich | [2006/01] | English: | A method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate | [2006/01] | French: | Procédé de traitement d'une surface d'un substrat de carbure métallique pour son utilisation dans un procédé de fabrication de semiconducteurs et un carbure métallique | [2006/01] | Examination procedure | 29.06.2006 | Examination requested [2006/32] | 04.12.2006 | Despatch of a communication from the examining division (Time limit: M04) | 29.01.2007 | Reply to a communication from the examining division | 04.05.2007 | Despatch of a communication from the examining division (Time limit: M06) | 03.10.2007 | Reply to a communication from the examining division | 29.09.2009 | Communication of intention to grant the patent | 11.12.2009 | Fee for grant paid | 11.12.2009 | Fee for publishing/printing paid | Opposition(s) | 06.12.2010 | No opposition filed within time limit [2011/06] | Fees paid | Renewal fee | 28.06.2006 | Renewal fee patent year 03 | 27.06.2007 | Renewal fee patent year 04 | 27.06.2008 | Renewal fee patent year 05 | 29.06.2009 | Renewal fee patent year 06 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | BE | 03.03.2010 | CY | 03.03.2010 | CZ | 03.03.2010 | DK | 03.03.2010 | EE | 03.03.2010 | FI | 03.03.2010 | PL | 03.03.2010 | RO | 03.03.2010 | SE | 03.03.2010 | SI | 03.03.2010 | SK | 03.03.2010 | TR | 03.03.2010 | BG | 03.06.2010 | GR | 04.06.2010 | ES | 14.06.2010 | CH | 30.06.2010 | LI | 30.06.2010 | LU | 30.06.2010 | MC | 30.06.2010 | PT | 05.07.2010 | HU | 04.09.2010 | [2012/47] |
Former [2012/43] | BE | 03.03.2010 | |
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EE | 03.03.2010 | ||
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BG | 03.06.2010 | ||
GR | 04.06.2010 | ||
ES | 14.06.2010 | ||
CH | 30.06.2010 | ||
LI | 30.06.2010 | ||
LU | 30.06.2010 | ||
MC | 30.06.2010 | ||
PT | 05.07.2010 | ||
HU | 04.09.2010 | ||
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GR | 04.06.2010 | ||
ES | 14.06.2010 | ||
CH | 30.06.2010 | ||
LI | 30.06.2010 | ||
MC | 30.06.2010 | ||
PT | 05.07.2010 | ||
HU | 04.09.2010 | ||
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CH | 30.06.2010 | ||
LI | 30.06.2010 | ||
MC | 30.06.2010 | ||
PT | 05.07.2010 | ||
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ES | 14.06.2010 | ||
MC | 30.06.2010 | ||
PT | 05.07.2010 | ||
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MC | 30.06.2010 | ||
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ES | 14.06.2010 | ||
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SI | 03.03.2010 | ||
SK | 03.03.2010 | ||
GR | 04.06.2010 | ||
ES | 14.06.2010 | ||
Former [2010/46] | FI | 03.03.2010 | |
PL | 03.03.2010 | ||
SI | 03.03.2010 | ||
GR | 04.06.2010 | ||
ES | 14.06.2010 | ||
Former [2010/38] | FI | 03.03.2010 | |
PL | 03.03.2010 | ||
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Former [2010/36] | PL | 03.03.2010 | |
SI | 03.03.2010 | Documents cited: | Search | [A]WO0145148 (KONINKL PHILIPS ELECTRONICS NV [NL]) [A] 1-23 * abstract * * page 4 *; | [XA]US2002033130 (HISADA YOSHIYUKI [JP], et al) [X] 12-23 * abstract * * paragraph [0005] - paragraph [0007]; claim - * [A] 1-11; | [A]WO02086180 (UNIV ILLINOIS [US]) [A] 1-23 * page 1 - page 3 * * page 24 - page 25 *; | [A] - JEON I D ET AL, "Formation of carbon coatings on silicon carbide by reactions in halogen containing media", PROCEEDINGS OF THE SYMPOSIUM ON FUNDAMENTAL ASPECTS OF HIGH TEMPERATURES, XX, XX, (1997), vol. 96-26, pages 256 - 268, XP008007082 [A] 1,12 * the whole document * | [A] - ERSOY D A ET AL, "High temperature chlorination of SiC for preparation of tribological carbon films", PROCEEDINGS OF THE SYMPOSIUM ON HIGH TEMPERATURE CORROSION AND MATERIALS CHEMISTRY, XX, XX, (1998), pages 324 - 333, XP000981692 [A] 1,12 * the whole document * | [A] - GOGOTSI Y G ET AL, "CARBON COATINS ON SILICON CARBIDE BY REACTION WITH CHLORINE-CONTAINING GASES", JOURNAL OF MATERIALS CHEMISTRY, THE ROYAL SOCIETY OF CHEMISTRY, CAMBRIDGE, GB, (19970901), vol. 7, no. 9, ISSN 0959-9428, pages 1841 - 1848, XP000724179 [A] 1,12 * the whole document * [A] DOI: http://dx.doi.org/10.1039/a701126a |