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Extract from the Register of European Patents

EP About this file: EP1521296

EP1521296 - Method of reclaiming silicon wafers [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  19.02.2010
Database last updated on 03.10.2024
Most recent event   Tooltip19.02.2010Application deemed to be withdrawnpublished on 24.03.2010  [2010/12]
Applicant(s)For all designated states
Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
10-26, Wakinohama-cho 2-chome, Chuo-ku Kobe-shi
Hyogo 651-8585 / JP
For all designated states
Kobe Precision Inc.
1510 Zephyr Avenue Hayward
California 94544 / US
[N/P]
Former [2005/14]For all designated states
Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
10-26, Wakinohama-cho 2-chome, Chuo-ku
Kobe-shi, Hyogo 651-8585 / JP
For all designated states
Kobe Precision Inc.
1510 Zephyr Avenue
Hayward, California 94544 / US
Inventor(s)01 / Suzuki, Tetsuo, c/o Kobe Corporate Research Lab.
in Kobe Steel, Ltd. 5-5 Takatsukadai 1-chome
Nishi-ku Kobe-shi Hyogo 651-2271 / JP
02 / Takada, Satoru
c/o Kobe Precision Inc. 1510 Zephyr Ave
Hayward CA 94544 / US
 [2005/14]
Representative(s)Gillard, Richard Edward
Elkington and Fife LLP
Thavies Inn House
3-4 Holborn Circus
London EC1N 2HA / GB
[N/P]
Former [2009/45]Gillard, Richard Edward
Elkington and Fife LLP Thavies Inn House 3-4 Holborn Circus
London EC1N 2HA / GB
Former [2005/14]Gillard, Richard Edward
Elkington and Fife LLP, Prospect House 8 Pembroke Road
Sevenoaks, Kent TN13 1XR / GB
Application number, filing date04255729.821.09.2004
[2005/14]
Priority number, dateUS2003067730903.10.2003         Original published format: US 677309
[2005/14]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1521296
Date:06.04.2005
Language:EN
[2005/14]
Type: A3 Search report 
No.:EP1521296
Date:18.01.2006
[2006/03]
Search report(s)(Supplementary) European search report - dispatched on:EP02.12.2005
ClassificationIPC:H01L21/302, H01L21/306, H01L21/324
[2006/02]
CPC:
H01L21/02032 (EP,US); H01L21/304 (KR); H01L21/3221 (EP,US);
H01L21/324 (EP,US)
Former IPC [2005/14]H01L21/304, H01L21/306, H01L21/324
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2005/14]
TitleGerman:Verfahren zur Rückgewinnung von Silizium-Plättchen[2005/14]
English:Method of reclaiming silicon wafers[2005/14]
French:Méthode de régénération de plaquettes de Silicium[2005/14]
Examination procedure08.03.2006Examination requested  [2006/18]
16.03.2009Despatch of a communication from the examining division (Time limit: M06)
29.09.2009Application deemed to be withdrawn, date of legal effect  [2010/12]
03.11.2009Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2010/12]
Fees paidRenewal fee
11.09.2006Renewal fee patent year 03
12.09.2007Renewal fee patent year 04
31.03.2008Renewal fee patent year 05
11.09.2009Renewal fee patent year 06
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[Y]JPH0964052  ;
 [DA]US3923567  (LAWRENCE JOHN E) [DA] 1,3 * column 1, line 5 - line 12 * * column 1, line 41 - line 48 * * column 1, line 63 - line 68 * * column 3, line 18 - line 52 * * column 4, line 6 - line 41 * * column 5, line 30 - column 6, line 56; figures 1-5 ** column 7, line 32 - line 40 *;
 [Y]US2001039101  (WENSKI GUIDO [DE]) [Y] 1-5 * paragraph [0015] * * paragraph [0025] - paragraph [0027] * * paragraph [0030] - paragraph [0034] * * paragraph [0036] * * paragraph [0041] * * page 5, line 11 - line 13 * * paragraph [0046] - paragraph [0047] *;
 [A]EP1205968  (PURE WAFER LTD [GB]) [A] 1,3 * paragraph [0004] *;
 [PX]US2004063227  (SUZUKI TETSUO [JP], et al) [PX] 1-3 * paragraph [0004] * * paragraph [0007] * * paragraph [0013] - paragraph [0017] * * paragraph [0034] - paragraph [0036] * * paragraph [0052] - paragraph [0053] * * paragraph [0064] * * paragraph [0079] - paragraph [0081] * * paragraph [0085] - paragraph [0088] *;
 [Y]  - PATENT ABSTRACTS OF JAPAN, (19970731), vol. 1997, no. 07, & JP09064052 A 19970307 (MITSUBISHI MATERIALS SHILICON CORP; MITSUBISHI MATERIALS CORP) [Y] 1-5 * abstract *
 [DA]  - ISTRATOV A A ET AL, "Intrinsic diffusion coefficient of interstitial copper in silicon", PHYSICAL REVIEW LETTERS APS USA, (19980810), vol. 81, no. 6, ISSN 0031-9007, pages 1243 - 1246, XP002355224 [DA] 1 * page 1245; figure 3 *

DOI:   http://dx.doi.org/10.1103/PhysRevLett.81.1243
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.