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Extract from the Register of European Patents

EP About this file: EP1577656

EP1577656 - Method for manufacturing a semiconductor pressure sensor [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  15.04.2011
Database last updated on 19.07.2024
Most recent event   Tooltip15.04.2011No opposition filed within time limitpublished on 18.05.2011  [2011/20]
Applicant(s)For all designated states
STMicroelectronics S.r.l.
Via Olivetti 2
20041 Agrate Brianza (MB) / IT
[N/P]
Former [2010/14]For all designated states
STMicroelectronics Srl
Via Olivetti 2
20041 Agrate Brianza (MB) / IT
Former [2005/38]For all designated states
STMicroelectronics S.r.l.
Via C. Olivetti, 2
20041 Agrate Brianza (Milano) / IT
Inventor(s)01 / Villa, Flavio Francesco
Via P. Lambertenghi 23
20159 Milano / IT
02 / Barlocchi, Gabriele
Via Lucernate 8
20010 Cornaredo / IT
03 / Corona, Pietro
Via Leopardi 25
20123 Milano / IT
04 / Vigna, Benedetto
Via S. Angelo 37
85010 Pietrapertosa / IT
05 / Baldo, Lorenzo
Via Piave 172
20010 Bareggio / IT
 [2005/38]
Representative(s)Cerbaro, Elena, et al
Studio Torta S.p.A.
Via Viotti, 9
10121 Torino / IT
[N/P]
Former [2005/38]Cerbaro, Elena, et al
STUDIO TORTA S.r.l., Via Viotti, 9
10121 Torino / IT
Application number, filing date04425197.319.03.2004
[2005/38]
Filing languageIT
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1577656
Date:21.09.2005
Language:EN
[2005/38]
Type: B1 Patent specification 
No.:EP1577656
Date:09.06.2010
Language:EN
[2010/23]
Search report(s)(Supplementary) European search report - dispatched on:EP28.07.2004
ClassificationIPC:G01L9/00
[2005/38]
CPC:
G01L9/0073 (EP,US); G01L9/0045 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [2006/23]
Former [2005/38]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IT,  LI,  LU,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Halbleiterdrucksensor und Verfahren zur Herstellung[2005/38]
English:Method for manufacturing a semiconductor pressure sensor[2005/38]
French:Capteur de pression semiconducteur et son procédé de fabrication[2005/38]
Examination procedure17.03.2006Examination requested  [2006/20]
03.11.2006Despatch of a communication from the examining division (Time limit: M06)
03.05.2007Reply to a communication from the examining division
23.12.2009Communication of intention to grant the patent
20.04.2010Fee for grant paid
20.04.2010Fee for publishing/printing paid
Opposition(s)10.03.2011No opposition filed within time limit [2011/20]
Fees paidRenewal fee
29.03.2006Renewal fee patent year 03
27.03.2007Renewal fee patent year 04
26.03.2008Renewal fee patent year 05
26.03.2009Renewal fee patent year 06
30.03.2010Renewal fee patent year 07
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Documents cited:Search[X]US4993143  (SIDNER DIANE W [US], et al) [X] 13,20 * column 1, lines 23-31; figure 1 * * column 5, lines 34-62 *;
 [A]DE4227893  (BOSCH GMBH ROBERT [DE]) [A] 16-18 * column 3, lines 12-63; figure 1 *;
 [AY]DE10131249  (WACKER SILTRONIC HALBLEITERMAT [DE]) [A] 1-12 * paragraphs [0002] , [0003] , [0005] , [0010] , [0011] , [0013] , [0025] , [0029] , [0036] , [0038] , [0041] , [0042] *[Y] 1-5,10-12,18;
 [XAY]DE10114036  (BOSCH GMBH ROBERT [DE]) [X] 13-15,20 * paragraphs [0001] - [0003] - [0012] - [0025] * [A] 6-9 [Y] 1-5,10-12,18;
 [AD]EP1324382  (ST MICROELECTRONICS SRL [IT]) [AD] 6-9 * paragraphs [0018] - [0021] - [0023] - [0026] *;
 [YA]  - SATO T ET AL, "FABRICATION OF SILICON-ON-NOTHING STRUCTURE BY SUBSTRATE ENGINEERING USING THE EMPTY-SPACE-IN-SILICON FORMATION TECHNIQUE", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, (200401), vol. 43, no. 1, ISSN 0021-4922, pages 12 - 18, XP001191452 [Y] 1-5,10-12,18 * page 12, columns 1-2 * * page 17 - page 18 * [A] 6-9

DOI:   http://dx.doi.org/10.1143/JJAP.43.12
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