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Extract from the Register of European Patents

EP About this file: EP1593152

EP1593152 - SEMICONDUCTOR STRUCTURE ON AN EXTREMELY ROUGH SUBSTRATE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  30.11.2012
Database last updated on 24.08.2024
Most recent event   Tooltip18.07.2014Lapse of the patent in a contracting state
New state(s): HU		published on 20.08.2014  [2014/34]
Applicant(s)For all designated states
Soitec
Parc Technologique des Fontaines
Chemin des Franques
38190 Bernin / FR
[2012/19]
Former [2005/45]For all designated states
S.O.I.Tec Silicon Insulator Technologies
Parc Technologique des Fontaines
38190 Bernin / FR
Inventor(s)01 / RAYSSAC, Olivier
Chemin du Chapître
F-38100 GRENOBLE / FR
02 / MARTINEZ, Muriel
Résidence Le Floréal
5, boulevard de la Jomdière
F-38120 SAINT EGREVE / FR
03 / BISSON, Sephorah
40, rue Perrière
F-38000 GRENOBLE / FR
04 / PORTIGLIATTI, Lionel
36 Rue de la Beaume
F-38180 SEYSSIN / FR
 [2012/04]
Former [2005/45]01 / RAYSSAC, Olivier
Chemin du Chapître
F-38100 GRENOBLE / FR
02 / MARTINEZ, Muriel
Résidence Le Floréal 5, boulevard de la Jomdière
F-38120 SAINT EGREVE / FR
03 / BISSON, Sephorah
40, rue Perrière
F-38000 GRENOBLE / FR
04 / PORTIGLIATTI, Lionel
36 Rue de la Beaume
F-38180 SEYSSIN / FR
Representative(s)Desormiere, Pierre-Louis, et al
Cabinet Beau de Loménie
158, rue de l'Université
75340 Paris Cedex 07 / FR
[N/P]
Former [2005/45]Desormiere, Pierre-Louis, et al
Cabinet Beau de Loménie, 158, rue de l'Université
75340 Paris Cedex 07 / FR
Application number, filing date04710053.211.02.2004
[2005/45]
WO2004FR00305
Priority number, dateFR2003000165712.02.2003         Original published format: FR 0301657
[2005/45]
Filing languageFR
Procedural languageFR
PublicationType: A1 Application with search report
No.:WO2004075287
Date:02.09.2004
Language:FR
[2004/36]
Type: A1 Application with search report 
No.:EP1593152
Date:09.11.2005
Language:FR
The application published by WIPO in one of the EPO official languages on 02.09.2004 takes the place of the publication of the European patent application.
[2005/45]
Type: B1 Patent specification 
No.:EP1593152
Date:25.01.2012
Language:FR
[2012/04]
Search report(s)International search report - published on:EP02.09.2004
ClassificationIPC:H01L21/762, H01L21/20
[2005/45]
CPC:
H01L21/76254 (EP); H01L21/762 (KR); H01L21/20 (KR);
H01L21/7624 (EP); H01L21/76251 (EP); H01L21/76259 (EP)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   RO,   SE,   SI,   SK,   TR [2005/45]
TitleGerman:HALBLEITENDE STRUKTUR AUF EINEM SUBSTRAT MIT STARKER RAUHEIT[2005/45]
English:SEMICONDUCTOR STRUCTURE ON AN EXTREMELY ROUGH SUBSTRATE[2005/45]
French:STRUCTURE SEMI-CONDUCTRICE SUR SUBSTRAT A FORTE RUGOSITE[2005/45]
Entry into regional phase29.07.2005National basic fee paid 
29.07.2005Designation fee(s) paid 
29.07.2005Examination fee paid 
Examination procedure29.07.2005Examination requested  [2005/45]
18.12.2008Despatch of a communication from the examining division (Time limit: M04)
23.04.2009Reply to a communication from the examining division
11.12.2009Despatch of a communication from the examining division (Time limit: M04)
12.04.2010Reply to a communication from the examining division
24.08.2011Communication of intention to grant the patent
19.12.2011Fee for grant paid
19.12.2011Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  18.12.2008
Opposition(s)26.10.2012No opposition filed within time limit [2013/01]
Fees paidRenewal fee
23.11.2005Renewal fee patent year 03
26.02.2007Renewal fee patent year 04
27.02.2008Renewal fee patent year 05
25.02.2009Renewal fee patent year 06
24.02.2010Renewal fee patent year 07
23.02.2011Renewal fee patent year 08
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU11.02.2004
AT25.01.2012
CY25.01.2012
CZ25.01.2012
DK25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
RO25.01.2012
SE25.01.2012
SI25.01.2012
SK25.01.2012
TR25.01.2012
LU11.02.2012
BE28.02.2012
CH29.02.2012
LI29.02.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
ES06.05.2012
PT25.05.2012
[2014/34]
Former [2014/27]AT25.01.2012
CY25.01.2012
CZ25.01.2012
DK25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
RO25.01.2012
SE25.01.2012
SI25.01.2012
SK25.01.2012
TR25.01.2012
LU11.02.2012
BE28.02.2012
CH29.02.2012
LI29.02.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
ES06.05.2012
PT25.05.2012
Former [2014/21]AT25.01.2012
CY25.01.2012
CZ25.01.2012
DK25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
RO25.01.2012
SE25.01.2012
SI25.01.2012
SK25.01.2012
TR25.01.2012
BE28.02.2012
CH29.02.2012
LI29.02.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
ES06.05.2012
PT25.05.2012
Former [2013/22]AT25.01.2012
CY25.01.2012
CZ25.01.2012
DK25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
RO25.01.2012
SE25.01.2012
SI25.01.2012
SK25.01.2012
BE28.02.2012
CH29.02.2012
LI29.02.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
ES06.05.2012
PT25.05.2012
Former [2013/07]AT25.01.2012
CY25.01.2012
CZ25.01.2012
DK25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
RO25.01.2012
SE25.01.2012
SI25.01.2012
SK25.01.2012
BE28.02.2012
CH29.02.2012
LI29.02.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2013/04]CY25.01.2012
CZ25.01.2012
DK25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
RO25.01.2012
SE25.01.2012
SI25.01.2012
SK25.01.2012
BE28.02.2012
CH29.02.2012
LI29.02.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2012/50]CY25.01.2012
CZ25.01.2012
DK25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
RO25.01.2012
SE25.01.2012
SI25.01.2012
SK25.01.2012
CH29.02.2012
LI29.02.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2012/49]CY25.01.2012
CZ25.01.2012
DK25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
RO25.01.2012
SE25.01.2012
SI25.01.2012
CH29.02.2012
LI29.02.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2012/48]CY25.01.2012
EE25.01.2012
FI25.01.2012
IE25.01.2012
SE25.01.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2012/47]CY25.01.2012
FI25.01.2012
IE25.01.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2012/42]CY25.01.2012
FI25.01.2012
MC29.02.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2012/41]CY25.01.2012
FI25.01.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2012/37]FI25.01.2012
BG25.04.2012
GR26.04.2012
PT25.05.2012
Former [2012/36]BG25.04.2012
GR26.04.2012
Former [2012/35]BG25.04.2012
Cited inInternational search[X]JPS58178519  ;
 [Y]WO0003429  (COMMISSARIAT ENERGIE ATOMIQUE [FR], et al) [Y] 4,5,9,14,17-20,23 * abstract *;
 [A]US6146979  (HENLEY FRANCOIS J [US], et al) [A] 1,13,17,23 * abstract * * column 4, line 33 - line 37 * * column 8, line 10 - line 26 *;
 [A]DE19936905  (HOFFMANN AXEL [DE]) [A] 1,13,17,23 * abstract * * column 3, line 36 - line 38 * * column 4, line 67 - line 68 *;
 [A]US2001000733  (TOMIOKA SATOSHI [JP]) [A] 1,13,17,23 * abstract *;
 [XY]US2002069816  (GEHRKE THOMAS [US], et al) [X] 1-3,6-8,13,15 * abstract * * paragraphs [0026] , [0029] , [0035] * [Y] 4,5,9,14,17-20,23;
 [A]US2002192959  (SHIBATA TOMOHIKO [JP], et al) [A] 1,13,17,23 * abstract ** paragraph [0075] *;
 [X]  - PATENT ABSTRACTS OF JAPAN, (19840120), vol. 008, no. 013, Database accession no. (E - 222), & JP58178519 A 19831019 (NIPPON DENKI KK) [X] 1,13 * abstract *
 [A]  - DAVID R. LIDE, CRC Handbook of Chemistry and Physics, BOCA RATON NEW YORK LONDON TOKYO, CRC PRESS, (1996), XP002288762 [A] 1,13,17,23 * pages 174-175 * * pages 177-178 *
ExaminationUS5782975
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.