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Extract from the Register of European Patents

EP About this file: EP1664396

EP1664396 - A METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER [Right-click to bookmark this link]
Former [2006/23]A METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER
[2010/45]
StatusNo opposition filed within time limit
Status updated on  20.07.2012
Database last updated on 19.07.2024
Most recent event   Tooltip18.07.2014Lapse of the patent in a contracting state
New state(s): HU		published on 20.08.2014  [2014/34]
Applicant(s)For all designated states
Soitec
Parc Technologique des Fontaines
Chemin des Franques
38190 Bernin / FR
[2012/19]
Former [2006/23]For all designated states
S.O.I.Tec Silicon on Insulator Technologies
Parc Technologique des Fontaines, Chemin des Franques
38190 Bernin / FR
Inventor(s)01 / FAURE, Bruce
10 rue du Vieux Temple
F-38000 Grenoble / FR
02 / DI CIOCCIO, Léa
418 Chemin de Labis
F-38330 Saint-Ismier / FR
 [2011/37]
Former [2006/23]01 / FAURE, Bruce
4 Place Claveyson
F-38000 Grenoble / FR
02 / DI CIOCCIO, Léa
418 Chemin de Labis
F-38330 Saint-Ismier / FR
Representative(s)Bomer, Françoise Marie, et al
Cabinet Regimbeau
Espace Performance
Bâtiment K
35769 Saint-Grégoire-Cedex / FR
[N/P]
Former [2006/23]Bomer, Françoise Marie, et al
Cabinet Régimbeau Espace Performance Bâtiment K
35769 Saint-Gregoire-Cedex / FR
Application number, filing date04763149.407.07.2004
[2006/23]
WO2004EP07577
Priority number, dateFR2003000907624.07.2003         Original published format: FR 0309076
[2006/23]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2005014895
Date:17.02.2005
Language:EN
[2005/07]
Type: A1 Application with search report 
No.:EP1664396
Date:07.06.2006
Language:EN
The application published by WIPO in one of the EPO official languages on 17.02.2005 takes the place of the publication of the European patent application.
[2006/23]
Type: B1 Patent specification 
No.:EP1664396
Date:14.09.2011
Language:EN
[2011/37]
Search report(s)International search report - published on:EP17.02.2005
ClassificationIPC:C30B25/02, H01L21/762, C30B33/00
[2006/23]
CPC:
H01L21/76254 (EP); C30B25/02 (KR); C30B23/02 (KR);
C30B25/18 (EP); C30B33/00 (EP)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2006/23]
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINER EPITAKTISCH AUFGEWACHSENEN SCHICHT[2011/13]
English:A METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER[2011/13]
French:PROCEDE DE FABRICATION D'UNE COUCHE DE CROISSANCE EPITAXIALE[2011/13]
Former [2006/23]VERFAHREN ZUR HERSTELLUNG EINER EPITAKTISCH AUFGEWACHSENEN SCHICHT
Former [2006/23]A METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER
Former [2006/23]PROCEDE DE FABRICATION D'UNE COUCHE DE CROISSANCE EPITAXIALE
Entry into regional phase20.02.2006National basic fee paid 
20.02.2006Designation fee(s) paid 
20.02.2006Examination fee paid 
Examination procedure20.02.2006Examination requested  [2006/23]
13.11.2009Despatch of a communication from the examining division (Time limit: M06)
04.05.2010Reply to a communication from the examining division
11.10.2010Despatch of a communication from the examining division (Time limit: M04)
01.02.2011Reply to a communication from the examining division
05.04.2011Communication of intention to grant the patent
04.07.2011Fee for grant paid
04.07.2011Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  13.11.2009
Opposition(s)15.06.2012No opposition filed within time limit [2012/34]
Fees paidRenewal fee
20.02.2006Renewal fee patent year 03
25.06.2007Renewal fee patent year 04
30.07.2008Renewal fee patent year 05
28.07.2009Renewal fee patent year 06
29.07.2010Renewal fee patent year 07
29.07.2011Renewal fee patent year 08
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU07.07.2004
AT14.09.2011
BE14.09.2011
CY14.09.2011
CZ14.09.2011
DK14.09.2011
EE14.09.2011
FI14.09.2011
PL14.09.2011
RO14.09.2011
SE14.09.2011
SI14.09.2011
SK14.09.2011
TR14.09.2011
BG14.12.2011
GR15.12.2011
ES25.12.2011
PT16.01.2012
[2014/34]
Former [2014/21]AT14.09.2011
BE14.09.2011
CY14.09.2011
CZ14.09.2011
DK14.09.2011
EE14.09.2011
FI14.09.2011
PL14.09.2011
RO14.09.2011
SE14.09.2011
SI14.09.2011
SK14.09.2011
TR14.09.2011
BG14.12.2011
GR15.12.2011
ES25.12.2011
PT16.01.2012
Former [2013/29]AT14.09.2011
BE14.09.2011
CY14.09.2011
CZ14.09.2011
DK14.09.2011
EE14.09.2011
FI14.09.2011
PL14.09.2011
RO14.09.2011
SE14.09.2011
SI14.09.2011
SK14.09.2011
BG14.12.2011
GR15.12.2011
ES25.12.2011
PT16.01.2012
Former [2013/22]AT14.09.2011
BE14.09.2011
CY14.09.2011
CZ14.09.2011
DK14.09.2011
EE14.09.2011
FI14.09.2011
PL14.09.2011
RO14.09.2011
SE14.09.2011
SI14.09.2011
SK14.09.2011
GR15.12.2011
ES25.12.2011
PT16.01.2012
Former [2012/35]AT14.09.2011
BE14.09.2011
CY14.09.2011
CZ14.09.2011
DK14.09.2011
EE14.09.2011
FI14.09.2011
PL14.09.2011
RO14.09.2011
SE14.09.2011
SI14.09.2011
SK14.09.2011
GR15.12.2011
PT16.01.2012
Former [2012/26]AT14.09.2011
BE14.09.2011
CY14.09.2011
CZ14.09.2011
EE14.09.2011
FI14.09.2011
PL14.09.2011
RO14.09.2011
SE14.09.2011
SI14.09.2011
SK14.09.2011
GR15.12.2011
PT16.01.2012
Former [2012/23]AT14.09.2011
BE14.09.2011
CY14.09.2011
CZ14.09.2011
EE14.09.2011
FI14.09.2011
RO14.09.2011
SE14.09.2011
SI14.09.2011
SK14.09.2011
GR15.12.2011
PT16.01.2012
Former [2012/21]AT14.09.2011
BE14.09.2011
CY14.09.2011
CZ14.09.2011
FI14.09.2011
SE14.09.2011
SI14.09.2011
GR15.12.2011
Former [2012/18]AT14.09.2011
BE14.09.2011
CY14.09.2011
FI14.09.2011
SE14.09.2011
SI14.09.2011
GR15.12.2011
Former [2012/12]AT14.09.2011
CY14.09.2011
FI14.09.2011
SE14.09.2011
SI14.09.2011
GR15.12.2011
Former [2012/11]AT14.09.2011
FI14.09.2011
SE14.09.2011
SI14.09.2011
GR15.12.2011
Former [2012/10]FI14.09.2011
SE14.09.2011
GR15.12.2011
Former [2012/09]FI14.09.2011
Cited inInternational search[AD]US6146457  (SOLOMON GLENN S [US]) [AD] 1-26 * the whole document *;
 [A]WO0175196  (SOITEC SILICON ON INSULATOR [FR], et al) [A] 1 * page 6, line 4 - line 15; claims 1,11 *;
 [X]US6303468  (ASPAR BERNARD [FR], et al) [X] 25 * column 4, line 35 - line 40; claims 1,11,15,16 *;
 [AD]US6335263  (CHEUNG NATHAN W [US], et al) [AD] 1 * the whole document *;
 [A]US6391799  (DI CIOCCIO LEA [FR]) [A] 1,15-17 * claims 1-13 *;
 [A]WO0243112  (SOITEC SILICON ON INSULATOR [FR], et al);
 [A]WO0243124  (SOITEC SILICON ON INSULATOR [FR], et al);
 [AD]EP1288346  (HOYA CORP [JP]);
 [AD]  - BALKAS C M ET AL, "Growth and characterization of GaN single crystals", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, (20000101), vol. 208, no. 1-4, ISSN 0022-0248, pages 100 - 106, XP004253381

DOI:   http://dx.doi.org/10.1016/S0022-0248(99)00445-5
 [AD]  - POROWSKI S, "Bulk and homoepitaxial GaN-growth and characterisation", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING, AMSTERDAM, NL, (19980615), vol. 189-190, ISSN 0022-0248, pages 153 - 158, XP004148494

DOI:   http://dx.doi.org/10.1016/S0022-0248(98)00193-6
by applicantUS6146457
 US6303468
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.