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Extract from the Register of European Patents

EP About this file: EP1664374

EP1664374 - ATOMIC LAYER DEPOSITION METHODS OF FORMING SILICON DIOXIDE COMPRISING LAYERS [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  10.04.2012
Database last updated on 25.09.2024
Most recent event   Tooltip04.10.2013Lapse of the patent in a contracting state
New state(s): HU		published on 06.11.2013  [2013/45]
Applicant(s)For all designated states
Micron Technology, Inc.
8000 South Federal Way MS 1-525
Boise, ID 83716 / US
[N/P]
Former [2011/22]For all designated states
Micron Technology, Inc.
8000 South Federal Way, MS 1-525
Boise, ID 83716 / US
Former [2006/23]For all designated states
MICRON TECHNOLOGY, INC.
8000 South Federal Way, MS 1-525
Boise, ID 83716 / US
Inventor(s)01 / LI, Li
5239 East Quarterpath Drive
Boise, ID 83716 / US
02 / LI, Weimin
18 Qington Road 43-502
Pudong New Area / CN
03 / SANDHU, Gurtej, S.
2964 East Parkriver Drive
Boise, ID 83706 / US
 [2007/21]
Former [2006/23]01 / LI, Li
2790 North Oldstone Way
Meridian, ID 83642 / US
02 / LI, Weimin
18 Qington Road 43-502
Pudong New Area / CN
03 / SANDHU, Gurtej, S.
2964 East Parkriver Drive
Boise, ID 83706 / US
Representative(s)Hackett, Sean James
Marks & Clerk LLP
Alpha Tower
Suffolk Street Queensway
Birmingham B1 1TT / GB
[N/P]
Former [2008/33]Hackett, Sean James
Marks & Clerk Alpha Tower Suffolk Street Queensway
Birmingham B1 1TT / GB
Former [2006/23]Hackett, Sean James
Marks & Clerk, Patent Attorneys, Alpha Tower, Suffolk Street Queensway
Birmingham B1 1TT / GB
Application number, filing date04783643.208.09.2004
[2006/23]
WO2004US29478
Priority number, dateUS2003066966723.09.2003         Original published format: US 669667
[2006/23]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO2005033359
Date:14.04.2005
Language:EN
[2005/15]
Type: A2 Application without search report 
No.:EP1664374
Date:07.06.2006
Language:EN
The application published by WIPO in one of the EPO official languages on 14.04.2005 takes the place of the publication of the European patent application.
[2006/23]
Type: B1 Patent specification 
No.:EP1664374
Date:01.06.2011
Language:EN
[2011/22]
Search report(s)International search report - published on:EP23.06.2005
ClassificationIPC:C23C16/40, C23C16/455, // C23C16/44
[2010/48]
CPC:
C23C16/45527 (EP,KR,US); C23C16/402 (EP,KR,US); C23C16/45553 (KR);
H01L21/02164 (KR); H01L21/02211 (KR); H01L21/0228 (KR)
Former IPC [2006/23]C23C16/40, C23C16/455
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2006/23]
Extension statesALNot yet paid
HRNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
TitleGerman:ATOMLAGENABSCHEIDUNGSVERFAHREN ZUR BILDUNG VON SILICIUMDIOXID ENTHALTENDEN SCHICHTEN[2006/23]
English:ATOMIC LAYER DEPOSITION METHODS OF FORMING SILICON DIOXIDE COMPRISING LAYERS[2006/23]
French:FORMATION DE COUCHES CONTENANT DU DIOXYDE DE SILICIUM PAR DES PROCEDES D'EPITAXIE EN COUCHES ATOMIQUES[2006/23]
Entry into regional phase13.03.2006National basic fee paid 
13.03.2006Designation fee(s) paid 
13.03.2006Examination fee paid 
Examination procedure19.04.2005Request for preliminary examination filed
International Preliminary Examining Authority: US
13.03.2006Amendment by applicant (claims and/or description)
13.03.2006Examination requested  [2006/23]
05.03.2008Despatch of a communication from the examining division (Time limit: M02)
07.04.2008Reply to a communication from the examining division
28.07.2010Despatch of a communication from the examining division (Time limit: M04)
13.10.2010Reply to a communication from the examining division
28.12.2010Communication of intention to grant the patent
13.04.2011Fee for grant paid
13.04.2011Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  05.03.2008
Opposition(s)02.03.2012No opposition filed within time limit [2012/19]
Fees paidRenewal fee
11.09.2006Renewal fee patent year 03
12.09.2007Renewal fee patent year 04
15.09.2008Renewal fee patent year 05
11.09.2009Renewal fee patent year 06
14.09.2010Renewal fee patent year 07
Opt-out from the exclusive  Tooltip
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
DK01.06.2011
EE01.06.2011
FI01.06.2011
HU01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
TR01.06.2011
BG01.09.2011
GR02.09.2011
IE08.09.2011
LU08.09.2011
ES12.09.2011
CH30.09.2011
FR30.09.2011
LI30.09.2011
MC30.09.2011
PT03.10.2011
[2013/45]
Former [2013/44]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
DK01.06.2011
EE01.06.2011
FI01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
TR01.06.2011
BG01.09.2011
GR02.09.2011
IE08.09.2011
LU08.09.2011
ES12.09.2011
CH30.09.2011
FR30.09.2011
LI30.09.2011
MC30.09.2011
PT03.10.2011
Former [2013/29]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
DK01.06.2011
EE01.06.2011
FI01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
BG01.09.2011
GR02.09.2011
IE08.09.2011
LU08.09.2011
ES12.09.2011
CH30.09.2011
FR30.09.2011
LI30.09.2011
MC30.09.2011
PT03.10.2011
Former [2013/25]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
DK01.06.2011
EE01.06.2011
FI01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
IE08.09.2011
LU08.09.2011
ES12.09.2011
CH30.09.2011
FR30.09.2011
LI30.09.2011
MC30.09.2011
PT03.10.2011
Former [2012/37]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
DK01.06.2011
EE01.06.2011
FI01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
IE08.09.2011
ES12.09.2011
CH30.09.2011
FR30.09.2011
LI30.09.2011
MC30.09.2011
PT03.10.2011
Former [2012/35]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
DK01.06.2011
EE01.06.2011
FI01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
IE08.09.2011
ES12.09.2011
CH30.09.2011
LI30.09.2011
MC30.09.2011
PT03.10.2011
Former [2012/33]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
DK01.06.2011
EE01.06.2011
FI01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
ES12.09.2011
CH30.09.2011
LI30.09.2011
MC30.09.2011
PT03.10.2011
Former [2012/31]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
DK01.06.2011
EE01.06.2011
FI01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
ES12.09.2011
MC30.09.2011
PT03.10.2011
Former [2012/23]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
EE01.06.2011
FI01.06.2011
IT01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
ES12.09.2011
MC30.09.2011
PT03.10.2011
Former [2012/20]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
EE01.06.2011
FI01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
ES12.09.2011
MC30.09.2011
PT03.10.2011
Former [2012/11]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
EE01.06.2011
FI01.06.2011
NL01.06.2011
PL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
ES12.09.2011
PT03.10.2011
Former [2012/10]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
EE01.06.2011
FI01.06.2011
NL01.06.2011
RO01.06.2011
SE01.06.2011
SI01.06.2011
SK01.06.2011
GR02.09.2011
ES12.09.2011
PT03.10.2011
Former [2012/09]AT01.06.2011
BE01.06.2011
CY01.06.2011
CZ01.06.2011
EE01.06.2011
FI01.06.2011
NL01.06.2011
SE01.06.2011
SI01.06.2011
GR02.09.2011
ES12.09.2011
PT03.10.2011
Former [2012/05]AT01.06.2011
BE01.06.2011
CY01.06.2011
FI01.06.2011
NL01.06.2011
SE01.06.2011
SI01.06.2011
GR02.09.2011
ES12.09.2011
Former [2012/01]AT01.06.2011
CY01.06.2011
FI01.06.2011
NL01.06.2011
SE01.06.2011
SI01.06.2011
GR02.09.2011
ES12.09.2011
Former [2011/52]AT01.06.2011
CY01.06.2011
FI01.06.2011
SE01.06.2011
SI01.06.2011
GR02.09.2011
ES12.09.2011
Former [2011/50]CY01.06.2011
FI01.06.2011
SE01.06.2011
SI01.06.2011
GR02.09.2011
ES12.09.2011
Former [2011/49]CY01.06.2011
FI01.06.2011
SE01.06.2011
GR02.09.2011
ES12.09.2011
Cited inInternational search[A]EP1107302  (APPLIED MATERIALS INC [US]) [A] 1-49 * paragraph [0019]; figures 7,8; claims 1,5,6 *;
 [A]WO0166832  (ASM INC [US]) [A] 1-49 * page 8, line 26 - page 12, line 8; figure 7; claims 1-6,45 *;
 [A]US2003064607  (LEU JIHPERNG [US], et al) [A] 1-49 * paragraph [0039] - paragraph [0041]; claims 1,5,6,14 *;
 [A]  - HIROYUKI SAKAUE, "DIGITAL CHEMICAL VAPOR DEPOSITION OF SIO2 USING A REPETITIVE REACTION OF TRIETHYLSILANE/HYDROGEN AND OXIDATION", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, (19910115), vol. 30, no. 1B PART 2, ISSN 0021-4922, pages L124 - L127, XP000220250 [A] 1,21,38 * paragraph [02.2]; figures 4,5 *

DOI:   http://dx.doi.org/10.1143/JJAP.30.L124
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