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EP About this file: EP1644984

EP1644984 - SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE [Right-click to bookmark this link]
Former [2006/15]	SEMICONDUCTOR DEVICE INCLUDING BAND-ENGINEERED SUPERLATTICE
	[2009/11]
Status	No opposition filed within time limit Status updated on 23.07.2010 Database last updated on 31.08.2024
Most recent event Tooltip	23.07.2010	No opposition filed within time limit	published on 25.08.2010 [2010/34]
Applicant(s)	For all designated states Mears Technologies, Inc. 1100 Winter Street, Suite 4700 Waltham, MA 02451 / US
	[2007/47]
Former [2006/15]	For all designated states RJ Mears, LLC 1100 Winter Street, Suite 4700 Waltham, MA 02451 / US
Inventor(s)	01 / MEARS, Robert, J. 14 Summit Road Wellesley, MA 02482 / US
	02 / YIPTONG, Jean Augustin Chan Sow Fook 31 Blithewook Avenue 803 Worchester, Massachussets 01604 / US
	03 / HYTHA, Marek 202 Saint Paul Street, Apt 32 Brookline, MA 02446 / US
	04 / KREPS, Scott, A. 4 Cross Street Southborough, MA 01772 / US
	05 / DUKOVSKI, Ilija 66 Kensington Street, Apt. 2 Newton, MA 02460 / US
	[2009/11]
Former [2006/33]	01 / MEARS, Robert, J. 14 Summit Road Wellesley, MA 02482 / US
	02 / YIPTONG, Jean Augustin Chan Sow Fook 31 Blithewook Avenue Worchester, Massachussets 01604 / US
	03 / HYTHA, Marek 202 Saint Paul Street, Apt 32 Brookline, MA 02446 / US
	04 / KREPS, Scott, A. 4 Cross Street Southborough, MA 01772 / US
	05 / DUKOVSKI, Ilija 66 Kensington Street, Apt. 2 Newton, MA 02460 / US
Former [2006/15]	01 / MEARS, Robert, J. 14 Summit Road Wellesley, MA 02482 / US
	02 / YIPTONG, Jean Augustin Chan Sow Fook 16 SummerAve nue, Apt. 13 Waltham, MA 02452 / US
	03 / HYTHA, Marek 202 Saint Paul Street, Apt 32 Brookline, MA 02446 / US
	04 / KREPS, Scott, A. 4 Cross Street Southborough, MA 01772 / US
	05 / DUKOVSKI, Ilija 66 Kensington Street, Apt. 2 Newton, MA 02460 / US
Representative(s)	Ferreccio, Rinaldo Botti & Ferrari S.p.A. Via Cappellini, 11 20124 Milano / IT
	[N/P]
Former [2006/15]	Ferreccio, Rinaldo c/o Botti & Ferrari S.r.l. Via Locatelli 5 20124 Milano / IT
Application number, filing date	04809463.5	28.06.2004
	[2006/15]
	WO2004US20652
Priority number, date	US20030603621	26.06.2003 Original published format: US 603621
	US20030603696	26.06.2003 Original published format: US 603696
	US20030647060	22.08.2003 Original published format: US 647060
	[2006/15]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2005034245
	Date:	14.04.2005
	Language:	EN
	[2005/15]
	Type:	A1 Application with search report
	No.:	EP1644984
	Date:	12.04.2006
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 14.04.2005 takes the place of the publication of the European patent application.
	[2006/15]
	Type:	B1 Patent specification
	No.:	EP1644984
	Date:	16.09.2009
	Language:	EN
	[2009/38]
Search report(s)	International search report - published on:	EP	14.04.2005
Classification	IPC:	H01L29/15, H01L29/10	[2006/15]
	CPC:	H01L29/152 (EP,US); B82Y10/00 (EP,US); H01L21/823807 (EP,US); H01L29/1054 (EP,US); H01L29/155 (EP,US); H01L29/7833 (EP,US)
Designated contracting states	DE, FR, GB, IT [2006/40]
Former [2006/15]	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR
Extension states	AL	Not yet paid
	HR	Not yet paid
	LT	Not yet paid
	LV	Not yet paid
	MK	Not yet paid
Title	German:	HALBLEITERBAUELEMENT MIT SUPERGITTER	[2009/11]
	English:	SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE	[2009/11]
	French:	DISPOSITIF A SEMICONDUCTEUR COMPRENANT UN SUPER-RESEAU	[2009/11]
	Former [2006/15]	HALBLEITERBAUELEMENT MIT BANDENTWORFENEM SUPERGITTER
	Former [2006/15]	SEMICONDUCTOR DEVICE INCLUDING BAND-ENGINEERED SUPERLATTICE
	Former [2006/15]	DISPOSITIF A SEMICONDUCTEUR COMPRENANT UN SUPER-RESEAU CONCU SOUS FORME DE BANDE
Entry into regional phase	24.01.2006	National basic fee paid
	24.01.2006	Designation fee(s) paid
	24.01.2006	Examination fee paid
Examination procedure	13.05.2005	Request for preliminary examination filed International Preliminary Examining Authority: EP
	24.01.2006	Examination requested [2006/15]
	29.03.2006	Despatch of a communication from the examining division (Time limit: M04)
	27.07.2006	Reply to a communication from the examining division
	13.11.2006	Despatch of a communication from the examining division (Time limit: M06)
	11.05.2007	Reply to a communication from the examining division
	25.06.2007	Despatch of a communication from the examining division (Time limit: M06)
	18.12.2007	Reply to a communication from the examining division
	23.06.2008	Despatch of a communication from the examining division (Time limit: M04)
	31.10.2008	Reply to a communication from the examining division
	16.02.2009	Communication of intention to grant the patent
	17.06.2009	Fee for grant paid
	17.06.2009	Fee for publishing/printing paid
Opposition(s)	17.06.2010	No opposition filed within time limit [2010/34]
Fees paid	Renewal fee
	27.06.2006	Renewal fee patent year 03
	27.06.2007	Renewal fee patent year 04
	28.06.2008	Renewal fee patent year 05
	29.06.2009	Renewal fee patent year 06
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Cited in	International search	[X]US4908678 (YAMAZAKI SHUNPEI [JP]) [X] 1-20 * figure 1d *;
		[X]JPS62219665 ;
		[X]JPS6127681 ;
		[DA]US5216262 (TSU RAPHAEL [US]) [DA] 1-20 * the whole document *;
		[DA]WO02103767 (NANODYNAMICS INC [US], et al) [DA] 1-20 * page 7, line 6 - page 8, line 9 *;
		[A]US4882609 (SCHUBERT ERDMANN [DE], et al) [A] 1-20 * abstract *;
		[A]US5081513 (JACKSON WARREN B [US], et al) [A] 1-20 * the whole document *
		[X] - PATENT ABSTRACTS OF JAPAN, (19880312), vol. 012, no. 080, Database accession no. (E - 590), & JP62219665 A 19870926 (FUJITSU LTD) [X] 1-20 * abstract *
		[X] - PATENT ABSTRACTS OF JAPAN, (19860624), vol. 010, no. 179, Database accession no. (E - 414), & JP61027681 A 19860207 (RES DEV CORP OF JAPAN) [X] 1-20 * abstract *
		[DA] - XUAN LUO ET AL., "Chemical Design of Direct-Gap Light-Emitting Silicon", PHYSICAL REVIEW LETTERS, (20020812), vol. 89, no. 7, pages 1 - 4, XP002314002 [DA] 1-20 * the whole document * DOI: http://dx.doi.org/10.1103/PhysRevLett.89.076802
		[DA] - TSU, R., "Phenomena in silicon nanostructures devices", APPLIED PHYSICS A - MATERIALS SCIENCE AND PROCESSING, (20000906), vol. 71, no. 4, pages 391 - 402, XP002314003 [DA] 1-20 * the whole document *
	Examination	- MURAKAMI Y. ET AL, "Magnetic and melting transitions of oxygen monolayers and multilayers physisorped on exfoliated graphite", PHYSICAL REVIEW B, (19960801), vol. 54, no. 6, pages 4146 - 4154

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