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EP1643559
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EP About this file: EP1643559
| EP1643559 - MOS-gated semiconductor device with top drain [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 22.08.2008 Database last updated on 29.06.2024 | Most recent event Tooltip | 22.08.2008 | Application deemed to be withdrawn | published on 24.09.2008 [2008/39] | Applicant(s) | For all designated states INTERNATIONAL RECTIFIER CORPORATION 233 Kansas Street El Segundo, CA 90245 / US | [2006/14] | Inventor(s) | 01 /
Jones Davis P. 11 Llwyng Passat, Penarth marina Penarth, South Glamorgan CF64 1SE / GB | [2006/14] | Representative(s) | Fisauli, Beatrice A. M. Con Lor S.p.A Via Bronzino, 8 20133 Milano / IT | [N/P] |
| Former [2006/14] | Fisauli, Beatrice A. M. Con Lor SPA Via Renato Fucini, 5 20133 Milano / IT | Application number, filing date | 05021414.7 | 30.09.2005 | [2006/14] | Priority number, date | US20040615447P | 01.10.2004 Original published format: US 615447 P | US20050238207P | 29.09.2005 Original published format: US 238207 P | [2006/14] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1643559 | Date: | 05.04.2006 | Language: | EN | [2006/14] | Type: | A3 Search report | No.: | EP1643559 | Date: | 07.11.2007 | [2007/45] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 08.10.2007 | Classification | IPC: | H01L29/78, H01L21/336, // H01L29/417, H01L29/423 | [2007/45] | CPC: |
H01L29/781 (EP,US);
H01L29/66734 (EP,US);
H01L29/417 (EP,US);
H01L29/41741 (EP,US);
H01L29/42368 (EP,US)
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| Former IPC [2006/14] | H01L29/78 | Designated contracting states | [2008/29] |
| Former [2006/14] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | MOS-gesteuerte Halbleiteranordnung mit obenliegendem Drain | [2006/14] | English: | MOS-gated semiconductor device with top drain | [2006/14] | French: | Dispositif semi-conducteur à commande MOS et drain au-dessus | [2006/14] | Examination procedure | 01.04.2008 | Application deemed to be withdrawn, date of legal effect [2008/39] | 09.05.2008 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2008/39] | Fees paid | Penalty fee | Additional fee for renewal fee | 30.09.2007 | 03 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]EP1122796 (INFINEON TECHNOLOGIES AG [DE]) [X] 1-15* paragraph [0022] - paragraph [0037]; figures 1,2a-2e * |