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EP1723667
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EP About this file: EP1723667
| EP1723667 - METHODS OF FORMING DOPED AND UN-DOPED STRAINED SEMICONDUCTOR AND SEMICONDUCTOR FILMS BY GAS-CLUSTER ION IRRADIATION [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 27.01.2012 Database last updated on 31.08.2024 | Most recent event Tooltip | 27.01.2012 | Application deemed to be withdrawn | published on 29.02.2012 [2012/09] | Applicant(s) | For all designated states TEL Epion Inc. 37 Manning Road Billerica, MA 01821 / US | [2007/25] |
| Former [2006/47] | For all designated states Epion Corporation 37 Manning Road Billerica, MA 01821 / US | Inventor(s) | 01 /
BORLAND, John O., Epion Corporation 37 Manning Road Billerica, MA 01821 / US | 02 /
HAUTALA, John J., Epion Corporation 37 Manning Road Billerica, MA 01821 / US | 03 /
SKINNER, Wesley J., Epion Corporation 37 Manning Road Billerica, MA 01810 / US | 04 /
TABAT, Martin D., Epion Corporation 37 Manning Road Billerica, MA 01821 / US | [2006/47] | Representative(s) | Jennings, Tara Romaine, et al FRKelly 27 Clyde Road Dublin D04 F838 / IE | [N/P] |
| Former [2009/52] | Jennings, Tara Romaine, et al FRKelly 27 Clyde Road Ballsbridge Dublin 4 / IE | ||
| Former [2006/47] | Jennings, Tara Romaine, et al F. R. Kelly & Co. 27 Clyde Road Ballsbridge IRL-Dublin 4 / IE | Application number, filing date | 05713405.8 | 14.02.2005 | [2006/47] | WO2005US04440 | Priority number, date | US20040544516P | 14.02.2004 Original published format: US 544516 P | US20040621911P | 25.10.2004 Original published format: US 621911 P | [2006/47] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO2005079318 | Date: | 01.09.2005 | Language: | EN | [2005/35] | Type: | A2 Application without search report | No.: | EP1723667 | Date: | 22.11.2006 | Language: | EN | The application published by WIPO in one of the EPO official languages on 01.09.2005 takes the place of the publication of the European patent application. | [2006/47] | Search report(s) | International search report - published on: | US | 05.10.2006 | (Supplementary) European search report - dispatched on: | EP | 06.08.2009 | Classification | IPC: | H01L21/00, H01L21/31, H01L21/322 | [2006/47] | CPC: |
H01L21/265 (EP,US);
H01L21/26506 (EP,US);
H01L21/26513 (EP,US);
H01L21/26566 (EP,US);
H01L21/2658 (EP,US);
H01L29/7842 (EP,US);
H01J2237/0812 (EP,US)
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| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR [2006/47] | Extension states | AL | Not yet paid | BA | Not yet paid | HR | Not yet paid | LV | Not yet paid | MK | Not yet paid | YU | Not yet paid | Title | German: | VERFAHREN ZUR HERSTELLUNG VON DOTIERTEN UND UNDOTIERTEN GESPANNTEN HALBLEITERFILMEN UND HALBLEITERFILMEN DURCH GASCLUSTER-IONENBESTRAHLUNG | [2006/47] | English: | METHODS OF FORMING DOPED AND UN-DOPED STRAINED SEMICONDUCTOR AND SEMICONDUCTOR FILMS BY GAS-CLUSTER ION IRRADIATION | [2006/47] | French: | PROCEDES POUR FORMER DES FILMS SEMI-CONDUCTEURS CONTRAINTS DOPES ET NON DOPES ET DES FILMS SEMI-CONDUCTEURS, PAR IRRADIATION AVEC DES IONS D'AGREGATS GAZEUX | [2006/47] | Entry into regional phase | 14.09.2006 | National basic fee paid | 14.09.2006 | Search fee paid | 09.11.2006 | Designation fee(s) paid | 09.11.2006 | Examination fee paid | Examination procedure | 30.08.2006 | Amendment by applicant (claims and/or description) | 09.11.2006 | Examination requested [2006/51] | 04.11.2009 | Despatch of a communication from the examining division (Time limit: M06) | 13.08.2010 | Reply to a communication from the examining division | 01.09.2011 | Application deemed to be withdrawn, date of legal effect [2012/09] | 11.10.2011 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2012/09] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 04.11.2009 | Request for further processing for: | The application is deemed to be withdrawn due to failure to reply to the examination report | 13.08.2010 | Request for further processing filed | 13.08.2010 | Full payment received (date of receipt of payment) Request granted | 30.08.2010 | Decision despatched | Fees paid | Renewal fee | 22.02.2007 | Renewal fee patent year 03 | 29.02.2008 | Renewal fee patent year 04 | 28.03.2008 | Renewal fee patent year 05 | 24.02.2010 | Renewal fee patent year 06 | Penalty fee | Additional fee for renewal fee | 28.02.2011 | 07 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]US5907780 (GILMER MARK C [US], et al) [Y] 3* column 6, lines 16,17 *; | [X]US2003111699 (WASSHUBER CHRISTOPH [US], et al) [X] 38-41 * abstract *; | [XY]US6638802 (HWANG JACK [US], et al) [X] 38-41 * column 2 * [Y] 1-16; | [Y] - YAMADA I ET AL, "RANGE AND DAMAGE DISTRIBUTION IN CLUSTER ION IMPLANTATION", STRUCTURE AND MECHANICAL BEHAVIOR OF BIOLOGICAL MATERIALS. SYMPOSIUM - 29-31 MARCH 2005 - SAN FRANCISCO, CA, USA (IN: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS),, (19961202), vol. 438, ISBN 978-1-55899-828-5, pages 363 - 374, XP009084931 [Y] 1-16 * pages 363-367 * | [PX] - HAUTALA J ET AL, "Infusion processing solutions for USJ and localized strained-Si using gas cluster ion beams", ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS, 2004. RTP 2004. 12TH IE EE INTERNATIONAL CONFERENCE ON PORTLAND, OR, USA 28-30 SEPT. 2004, PISCATAWAY, NJ, USA,IEEE, US, (20040928), ISBN 978-0-7803-8477-4, pages 37 - 45, XP010807370 [PX] 1-16,38-41 * abstract * * page 41, column R - page 43, column L * DOI: http://dx.doi.org/10.1109/RTP.2004.1441709 | International search | [A]US5907780 (GILMER MARK C [US], et al); | [A]US2002015803 (AKIZUKI MAKOTO [JP], et al); | [X]US6963078 (CHU JACK OON [US]) |