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EP1756854

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EP About this file: EP1756854

EP1756854 - GALLIUM NITRIDE-BASED SEMICONDUCTOR STACKED STRUCTURE, PRODUCTION METHOD THEREOF, AND COMPOUND SEMICONDUCTOR AND LIGHT-EMITTING DEVICE EACH USING THE STACKED STRUCTURE [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 14.10.2011 Database last updated on 12.11.2024
Most recent event Tooltip	14.10.2011	Application deemed to be withdrawn	published on 16.11.2011 [2011/46]
Applicant(s)	For all designated states SHOWA DENKO K.K. 13-9, Shibadaimon 1-chome, Minato-ku Tokyo 105-8518 / JP
	[N/P]
Former [2007/09]	For all designated states SHOWA DENKO KABUSHIKI KAISHA 13-9, Shibadaimon 1-chome, Minato-ku Tokyo 105-8518 / JP
Inventor(s)	01 / UDAGAWA, Takashi, c/o Showa Denko K.K. 1505, Shimokagemori Chichibu-shi, Saitama 369-1871 / JP
	[2007/09]
Representative(s)	Strehl Schübel-Hopf & Partner Maximilianstrasse 54 80538 München / DE
	[2007/09]
Application number, filing date	05745588.3	25.05.2005
	[2007/09]
	WO2005JP10012
Priority number, date	JP20040157132	27.05.2004 Original published format: JP 2004157132
	[2007/09]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2005117078
	Date:	08.12.2005
	Language:	EN
	[2005/49]
	Type:	A1 Application with search report
	No.:	EP1756854
	Date:	28.02.2007
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 08.12.2005 takes the place of the publication of the European patent application.
	[2007/09]
Search report(s)	International search report - published on:	JP	08.12.2005
	(Supplementary) European search report - dispatched on:	EP	28.07.2010
Classification	IPC:	H01L21/205, C23C16/34, H01L33/00, H01S5/323, H01L21/02	[2010/34]
	CPC:	H01L21/02609 (EP,US); H01L21/0242 (EP,US); H01L21/02433 (EP,US); H01L21/02458 (EP,US); H01L21/02516 (EP,US); H01L21/0254 (EP,US); (+) H01L21/0262 (EP,US); H01L33/007 (EP,US); H01L33/16 (EP,US); H01L33/32 (EP,US) (-)
	Former IPC [2007/09]	H01L21/205, C23C16/34, H01L33/00, H01S5/323
Designated contracting states	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR [2007/09]
Extension states	AL	Not yet paid
	BA	Not yet paid
	HR	Not yet paid
	LV	Not yet paid
	MK	Not yet paid
	YU	Not yet paid
Title	German:	GESTAPELTE HALBLEITERSTRUKTUR AUF GALLIUMNITRIDBASIS, HERSTELLUNGSVERFAHREN DAFÜR UND VERBUNDHALBLEITER UND LICHTEMITTIERENDES BAUELEMENT JEWEILS MIT DER GESTAPELTEN STRUKTUR	[2007/09]
	English:	GALLIUM NITRIDE-BASED SEMICONDUCTOR STACKED STRUCTURE, PRODUCTION METHOD THEREOF, AND COMPOUND SEMICONDUCTOR AND LIGHT-EMITTING DEVICE EACH USING THE STACKED STRUCTURE	[2007/09]
	French:	STRUCTURE EMPILÉE DE SEMI-CONDUCTEUR GALLIUM NITRURÉ, MÉTHODE DE PRODUCTION, ET SEMI-CONDUCTEUR COMPOSÉ ET DISPOSITIF D'ÉMISSION DE LUMIÈRE (LED) UTILISANT LA STRUCTURE EMPILÉE<sb> </sb>	[2007/09]
Entry into regional phase	19.12.2006	National basic fee paid
	19.12.2006	Search fee paid
	19.12.2006	Designation fee(s) paid
	19.12.2006	Examination fee paid
Examination procedure	19.12.2006	Examination requested [2007/09]
	04.01.2011	Despatch of a communication from the examining division (Time limit: M04)
	17.05.2011	Application deemed to be withdrawn, date of legal effect [2011/46]
	22.06.2011	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2011/46]
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 04.01.2011
Fees paid	Renewal fee
	14.05.2007	Renewal fee patent year 03
	13.05.2008	Renewal fee patent year 04
	25.05.2009	Renewal fee patent year 05
	28.05.2010	Renewal fee patent year 06
	Penalty fee
	Additional fee for renewal fee
	31.05.2011	07 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A] - QIAN W ET AL, "Microstructural characterization of alpha-GaN films grown on sapphire by organometallic vapor phase epitaxy", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.113253, (19950306), vol. 66, no. 10, ISSN 0003-6951, pages 1252 - 1254, XP012012320 [A] 1-9 * the whole document * DOI: http://dx.doi.org/10.1063/1.113253
		[A] - LIU L ET AL, "Substrates for gallium nitride epitaxy", MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH LNKD- DOI:10.1016/S0927-796X(02)00008-6, (20020430), vol. 37, no. 3, ISSN 0927-796X, pages 61 - 127, XP004349792 [A] 1-9 * pages 67-78, chapter '2. Sapphire' * DOI: http://dx.doi.org/10.1016/S0927-796X(02)00008-6
		[A] - RUFFENACH-CLUR S ET AL, "MOVPE growth and characterization of AlxGa1-xN", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH LNKD- DOI:10.1016/S0921-5107(97)00166-9, (19971218), vol. 50, no. 1-3, ISSN 0921-5107, pages 219 - 222, XP004119138 [A] 1-9 * the whole document * DOI: http://dx.doi.org/10.1016/S0921-5107(97)00166-9
		[A] - YOSHIDA S ET AL, "Epitaxial growth of GaN/AlN heterostructures", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICSPROCESSING AND PHENOMENA, AMERICAN VACUUM SOCIETY, NEW YORK, NY, US, (19830401), vol. 1, no. 2, ISSN 0734-211X, pages 250 - 253, XP009135635 [A] 1-9 * page 250, chapter II. Experimental * * pages 250-251, chapter 'III.A Crystal orientation' * * figure 3(c) *
		[A] - SUNDARAVEL B ET AL, "Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001)", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US LNKD- DOI:10.1063/1.371966, (20000115), vol. 87, no. 2, ISSN 0021-8979, pages 955 - 957, XP012049368 [A] 1-9 * the whole document * DOI: http://dx.doi.org/10.1063/1.371966
		[A] - AMBACHER O, "Growth and applications of group III-nitrides", JOURNAL OF PHYSICS D. APPLIED PHYSICS, IOP PUBLISHING, BRISTOL, GB LNKD- DOI:10.1088/0022-3727/31/20/001, (19981021), vol. 31, no. 20, ISSN 0022-3727, pages 2653 - 2710, XP009117690 [A] 1-9 * pages 2661 -2665, chapter 4.1 * * pages 2676 - 2677, chapter 4.5.2 * DOI: http://dx.doi.org/10.1088/0022-3727/31/20/001
	International search	[A]JPH10107319 (SHOWA DENKO KK);
		[A]JPH10321905 (SHOWA DENKO KK);
		[A]JPH11162848 (SHOWA DENKO KK);
		[A]JPH11186603 (SHOWA DENKO KK);
		[AE]JP2005223126 (NGK INSULATORS LTD)

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