EP1806769 - SOI WAFER MANUFACTURING METHOD [Right-click to bookmark this link] | |||
Former [2007/28] | SOI WAFER MANUFACTURING METHOD AND SOI WAFER | ||
[2013/23] | Status | No opposition filed within time limit Status updated on 12.09.2014 Database last updated on 03.09.2024 | Most recent event Tooltip | 12.09.2014 | No opposition filed within time limit | published on 15.10.2014 [2014/42] | Applicant(s) | For all designated states Shin-Etsu Handotai Co., Ltd. 6-2, Ohtemachi 2-chome Chiyoda-ku Tokyo / JP | [2009/17] |
Former [2007/28] | For all designated states SHIN-ETSU HANDOTAI COMPANY LIMITED 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo 100-0005 / JP | Inventor(s) | 01 /
AGA, Hiroji, SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | 02 /
KOBAYASHI, Norihiro SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | 03 /
IMAI, Masayuki SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | 04 /
ENOMOTO, Tatsuo SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | 05 /
TAKENO, Hiroshi, SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | [2013/45] |
Former [2007/28] | 01 /
AGA, Hiroji, SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | ||
02 /
KOBAYASHI, Norihiro SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | |||
03 /
IMAI, Masayuki SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | |||
04 /
ENOMOTO, Tatsuo SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | |||
05 /
TAKENO, Hiroshi, SHIN-ETSU HANDOTAI CO., LTD. Yokonodaira Plant 507, Aza Matsubara Nakanoya Annaka-shi, Gunma 379-0125 / JP | Representative(s) | Merkle, Gebhard Ter Meer Steinmeister & Partner Patentanwälte mbB Mauerkircherstrasse 45 81679 München / DE | [N/P] |
Former [2013/45] | Merkle, Gebhard Ter Meer Steinmeister & Partner Mauerkircherstrasse 45 81679 München / DE | ||
Former [2007/28] | Merkle, Gebhard TER MEER STEINMEISTER & PARTNER GbR, Patentanwälte, Mauerkircherstrasse 45 81679 München / DE | Application number, filing date | 05778598.2 | 09.09.2005 | [2007/28] | WO2005JP16582 | Priority number, date | JP20040265901 | 13.09.2004 Original published format: JP 2004265901 | JP20040268901 | 15.09.2004 Original published format: JP 2004268901 | [2007/28] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2006030699 | Date: | 23.03.2006 | Language: | EN | [2006/12] | Type: | A1 Application with search report | No.: | EP1806769 | Date: | 11.07.2007 | Language: | EN | The application published by WIPO in one of the EPO official languages on 23.03.2006 takes the place of the publication of the European patent application. | [2007/28] | Type: | B1 Patent specification | No.: | EP1806769 | Date: | 06.11.2013 | Language: | EN | [2013/45] | Search report(s) | International search report - published on: | JP | 23.03.2006 | (Supplementary) European search report - dispatched on: | EP | 09.09.2010 | Classification | IPC: | H01L21/762, H01L21/322 | [2013/23] | CPC: |
H01L21/76254 (EP,US);
H01L27/12 (KR);
H01L21/02 (KR);
H01L21/3226 (EP,US)
|
Former IPC [2007/28] | H01L21/02, H01L27/12 | Designated contracting states | DE, FR [2007/51] |
Former [2007/28] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | HERSTELLUNGSVERFAHREN FÜR EINEN SOI-WAFER | [2013/23] | English: | SOI WAFER MANUFACTURING METHOD | [2013/23] | French: | PROCEDE DE FABRICATION D'UNE PLAQUETTE DE SOI | [2013/23] |
Former [2007/28] | HERSTELLUNGSVERFAHREN FÜR EINEN SOI-WAFER UND SOI-WAFER | ||
Former [2007/28] | SOI WAFER MANUFACTURING METHOD AND SOI WAFER | ||
Former [2007/28] | PROCEDE DE FABRICATION DE PLAQUETTE DE SOI ET PLAQUETTE DE SOI | Entry into regional phase | 12.04.2007 | Translation filed | 12.04.2007 | National basic fee paid | 12.04.2007 | Search fee paid | 12.04.2007 | Designation fee(s) paid | 12.04.2007 | Examination fee paid | Examination procedure | 12.04.2007 | Examination requested [2007/28] | 02.02.2011 | Amendment by applicant (claims and/or description) | 20.06.2011 | Despatch of a communication from the examining division (Time limit: M04) | 14.10.2011 | Reply to a communication from the examining division | 05.06.2013 | Communication of intention to grant the patent | 25.09.2013 | Fee for grant paid | 25.09.2013 | Fee for publishing/printing paid | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 20.06.2011 | Opposition(s) | 07.08.2014 | No opposition filed within time limit [2014/42] | Fees paid | Renewal fee | 12.04.2007 | Renewal fee patent year 03 | 26.09.2008 | Renewal fee patent year 04 | 21.09.2009 | Renewal fee patent year 05 | 27.09.2010 | Renewal fee patent year 06 | 20.09.2011 | Renewal fee patent year 07 | 20.09.2012 | Renewal fee patent year 08 | 19.09.2013 | Renewal fee patent year 09 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]US2004063298 (AGA HIROJI [JP], et al) [Y] 1-4,9-17 * page 2, paragraph 16 - page 8, paragraph 113; figure 1 *; | [Y] - SHIMIZU HIROFUMI ET AL, "WARPAGE OF CZOCHRALSKI-GROWN SILICON WAFERS AS AFFECTED BY OXYGEN PRECIPITATION.", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1: REGULAR PAPERS & SHORT NOTES, (198507), vol. 24, no. 7, pages 815 - 821, XP002595738 [Y] 1-4,9-17 * abstract * DOI: http://dx.doi.org/10.1143/JJAP.24.815 | International search | [Y]JPH06295912 (TOSHIBA CERAMICS CO); | [A]JPH08107078 (NEC CORP); | [A]JPH11330437 (NEC CORP); | [Y]JP2002009081 (TOSHIBA CORP); | [Y]WO03079447 (SHINETSU HANDOTAI KK [JP], et al) |