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Extract from the Register of European Patents

EP About this file: EP1806769

EP1806769 - SOI WAFER MANUFACTURING METHOD [Right-click to bookmark this link]
Former [2007/28]SOI WAFER MANUFACTURING METHOD AND SOI WAFER
[2013/23]
StatusNo opposition filed within time limit
Status updated on  12.09.2014
Database last updated on 03.09.2024
Most recent event   Tooltip12.09.2014No opposition filed within time limitpublished on 15.10.2014  [2014/42]
Applicant(s)For all designated states
Shin-Etsu Handotai Co., Ltd.
6-2, Ohtemachi 2-chome Chiyoda-ku
Tokyo / JP
[2009/17]
Former [2007/28]For all designated states
SHIN-ETSU HANDOTAI COMPANY LIMITED
4-2, Marunouchi 1-Chome Chiyoda-ku
Tokyo 100-0005 / JP
Inventor(s)01 / AGA, Hiroji, SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara
Nakanoya Annaka-shi, Gunma 379-0125 / JP
02 / KOBAYASHI, Norihiro SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara
Nakanoya Annaka-shi, Gunma 379-0125 / JP
03 / IMAI, Masayuki SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara
Nakanoya Annaka-shi, Gunma 379-0125 / JP
04 / ENOMOTO, Tatsuo SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara
Nakanoya Annaka-shi, Gunma 379-0125 / JP
05 / TAKENO, Hiroshi, SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara Nakanoya
Annaka-shi, Gunma 379-0125 / JP
 [2013/45]
Former [2007/28]01 / AGA, Hiroji, SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara
Nakanoya Annaka-shi, Gunma 379-0125 / JP
02 / KOBAYASHI, Norihiro SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara
Nakanoya Annaka-shi, Gunma 379-0125 / JP
03 / IMAI, Masayuki SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara
Nakanoya Annaka-shi, Gunma 379-0125 / JP
04 / ENOMOTO, Tatsuo SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara
Nakanoya Annaka-shi, Gunma 379-0125 / JP
05 / TAKENO, Hiroshi, SHIN-ETSU HANDOTAI CO., LTD.
Yokonodaira Plant 507, Aza Matsubara Nakanoya
Annaka-shi, Gunma 379-0125 / JP
Representative(s)Merkle, Gebhard
Ter Meer Steinmeister & Partner
Patentanwälte mbB
Mauerkircherstrasse 45
81679 München / DE
[N/P]
Former [2013/45]Merkle, Gebhard
Ter Meer Steinmeister & Partner
Mauerkircherstrasse 45
81679 München / DE
Former [2007/28]Merkle, Gebhard
TER MEER STEINMEISTER & PARTNER GbR, Patentanwälte, Mauerkircherstrasse 45
81679 München / DE
Application number, filing date05778598.209.09.2005
[2007/28]
WO2005JP16582
Priority number, dateJP2004026590113.09.2004         Original published format: JP 2004265901
JP2004026890115.09.2004         Original published format: JP 2004268901
[2007/28]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2006030699
Date:23.03.2006
Language:EN
[2006/12]
Type: A1 Application with search report 
No.:EP1806769
Date:11.07.2007
Language:EN
The application published by WIPO in one of the EPO official languages on 23.03.2006 takes the place of the publication of the European patent application.
[2007/28]
Type: B1 Patent specification 
No.:EP1806769
Date:06.11.2013
Language:EN
[2013/45]
Search report(s)International search report - published on:JP23.03.2006
(Supplementary) European search report - dispatched on:EP09.09.2010
ClassificationIPC:H01L21/762, H01L21/322
[2013/23]
CPC:
H01L21/76254 (EP,US); H01L27/12 (KR); H01L21/02 (KR);
H01L21/3226 (EP,US)
Former IPC [2007/28]H01L21/02, H01L27/12
Designated contracting statesDE,   FR [2007/51]
Former [2007/28]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:HERSTELLUNGSVERFAHREN FÜR EINEN SOI-WAFER[2013/23]
English:SOI WAFER MANUFACTURING METHOD[2013/23]
French:PROCEDE DE FABRICATION D'UNE PLAQUETTE DE SOI[2013/23]
Former [2007/28]HERSTELLUNGSVERFAHREN FÜR EINEN SOI-WAFER UND SOI-WAFER
Former [2007/28]SOI WAFER MANUFACTURING METHOD AND SOI WAFER
Former [2007/28]PROCEDE DE FABRICATION DE PLAQUETTE DE SOI ET PLAQUETTE DE SOI
Entry into regional phase12.04.2007Translation filed 
12.04.2007National basic fee paid 
12.04.2007Search fee paid 
12.04.2007Designation fee(s) paid 
12.04.2007Examination fee paid 
Examination procedure12.04.2007Examination requested  [2007/28]
02.02.2011Amendment by applicant (claims and/or description)
20.06.2011Despatch of a communication from the examining division (Time limit: M04)
14.10.2011Reply to a communication from the examining division
05.06.2013Communication of intention to grant the patent
25.09.2013Fee for grant paid
25.09.2013Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  20.06.2011
Opposition(s)07.08.2014No opposition filed within time limit [2014/42]
Fees paidRenewal fee
12.04.2007Renewal fee patent year 03
26.09.2008Renewal fee patent year 04
21.09.2009Renewal fee patent year 05
27.09.2010Renewal fee patent year 06
20.09.2011Renewal fee patent year 07
20.09.2012Renewal fee patent year 08
19.09.2013Renewal fee patent year 09
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Documents cited:Search[Y]US2004063298  (AGA HIROJI [JP], et al) [Y] 1-4,9-17 * page 2, paragraph 16 - page 8, paragraph 113; figure 1 *;
 [Y]  - SHIMIZU HIROFUMI ET AL, "WARPAGE OF CZOCHRALSKI-GROWN SILICON WAFERS AS AFFECTED BY OXYGEN PRECIPITATION.", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1: REGULAR PAPERS & SHORT NOTES, (198507), vol. 24, no. 7, pages 815 - 821, XP002595738 [Y] 1-4,9-17 * abstract *

DOI:   http://dx.doi.org/10.1143/JJAP.24.815
International search[Y]JPH06295912  (TOSHIBA CERAMICS CO);
 [A]JPH08107078  (NEC CORP);
 [A]JPH11330437  (NEC CORP);
 [Y]JP2002009081  (TOSHIBA CORP);
 [Y]WO03079447  (SHINETSU HANDOTAI KK [JP], et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.