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Extract from the Register of European Patents

EP About this file: EP1836730

EP1836730 - METHOD OF FABRICATING THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL [Right-click to bookmark this link]
Former [2007/39]THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL AND METHODS
[2021/03]
StatusThe application is deemed to be withdrawn
Status updated on  29.10.2021
Database last updated on 31.08.2024
FormerGrant of patent is intended
Status updated on  08.02.2021
FormerExamination is in progress
Status updated on  27.10.2018
Most recent event   Tooltip29.10.2021Application deemed to be withdrawnpublished on 01.12.2021  [2021/48]
Applicant(s)For all designated states
Hewlett-Packard Development Company, L.P.
10300 Energy Drive
Spring TX 77389 / US
[2019/20]
Former [2007/39]For all designated states
Hewlett-Packard Development Company, L.P.
Hewlett-Packard Company, Intellectual Property Administration 20555, S.H. 249
Houston, Texas 77070 / US
Inventor(s)01 / HOFFMAN, Randy
1000 NE Circle Blvd.
Corvallis, Oregon 97330-4239 / US
02 / MARDILOVICH, Peter
1000 NE Circle Blvd.
Corvallis, Oregon 97330-4239 / US
03 / CHIANG, Hai
1315 SW Maple Tree Court
Corvallis, Oregon 97333 / US
 [2007/39]
Representative(s)HGF
HGF Limited
1 City Walk
Leeds LS11 9DX / GB
[N/P]
Former [2010/31]Pratt, Richard Wilson, et al
EIP Fairfax House 15 Fulwood Place
London WC1V 6HU / GB
Former [2010/02]Durville, Guillaume, et al
Hewlett-Packard Española, S.L. Legal Department Cami de Can Graells, 1-21 Sant Cugat del Valles
08174 Barcelona / ES
Former [2009/51]Jackson, Richard Eric, et al
Carpmaels & Ransford 43-45 Bloomsbury Square
London WC1A 2RA / GB
Former [2007/39]Jackson, Richard Eric, et al
Carpmaels & Ransford, 43 Bloomsbury Square
London WC1A 2RA / GB
Application number, filing date05792523.230.08.2005
[2007/39]
WO2005US30555
Priority number, dateUS2004096150707.10.2004         Original published format: US 961507
[2007/39]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2006041578
Date:20.04.2006
Language:EN
[2006/16]
Type: A1 Application with search report 
No.:EP1836730
Date:26.09.2007
Language:EN
The application published by WIPO in one of the EPO official languages on 20.04.2006 takes the place of the publication of the European patent application.
[2007/39]
Search report(s)International search report - published on:EP20.04.2006
ClassificationIPC:H01L29/66, H01L29/786, H01L29/49
[2021/03]
CPC:
H01L29/7869 (EP,US); H01L29/0673 (EP,US); H01L29/4908 (EP,US);
H01L29/66969 (EP)
Former IPC [2007/39]H01L29/786, H01L29/49
Designated contracting statesDE,   FR,   GB [2008/03]
Former [2007/39]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
Extension statesALNot yet paid
BANot yet paid
HRNot yet paid
MKNot yet paid
YUNot yet paid
TitleGerman:VERFARHREN ZUR HERTELLUNG EINES DÜNNFILM-TRANSISTORS MIT HALBLEITENDEM MULTIKATIONENOXIDKANAL[2021/03]
English:METHOD OF FABRICATING THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL[2021/03]
French:PROCÉDÉ DE FABRICATION D'UN TRANSISTOR À COUCHE MINCE AYANT UN CANAL D'OXYDE MULTICATIONIQUE SEMI-CONDUCTEUR[2021/03]
Former [2007/39]DÜNNFILM-TRANSISTOR MIT HALBLEITENDEM MEHRKATIONENOXIDKANAL UND VERFAHREN
Former [2007/39]THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL AND METHODS
Former [2007/39]TRANSISTOR A COUCHE MINCE AYANT UN CANAL D'OXYDE MULTICATIONIQUE SEMI-CONDUCTEUR ET PROCEDES
Entry into regional phase04.05.2007National basic fee paid 
04.05.2007Designation fee(s) paid 
04.05.2007Examination fee paid 
Examination procedure04.05.2007Examination requested  [2007/39]
17.10.2007Despatch of a communication from the examining division (Time limit: M04)
21.02.2008Reply to a communication from the examining division
15.07.2011Despatch of a communication from the examining division (Time limit: M04)
26.10.2011Reply to a communication from the examining division
20.11.2015Despatch of a communication from the examining division (Time limit: M04)
18.03.2016Reply to a communication from the examining division
17.10.2018Despatch of a communication from the examining division (Time limit: M04)
18.02.2019Reply to a communication from the examining division
28.08.2019Despatch of a communication from the examining division (Time limit: M04)
03.01.2020Reply to a communication from the examining division
16.04.2020Despatch of a communication from the examining division (Time limit: M04)
24.08.2020Reply to a communication from the examining division
09.02.2021Communication of intention to grant the patent
22.06.2021Application deemed to be withdrawn, date of legal effect  [2021/48]
16.07.2021Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2021/48]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  17.10.2007
Fees paidRenewal fee
04.05.2007Renewal fee patent year 03
25.08.2008Renewal fee patent year 04
25.08.2009Renewal fee patent year 05
25.08.2010Renewal fee patent year 06
25.08.2011Renewal fee patent year 07
27.08.2012Renewal fee patent year 08
22.08.2013Renewal fee patent year 09
26.08.2014Renewal fee patent year 10
25.08.2015Renewal fee patent year 11
24.08.2016Renewal fee patent year 12
23.08.2017Renewal fee patent year 13
23.08.2018Renewal fee patent year 14
20.08.2019Renewal fee patent year 15
19.08.2020Renewal fee patent year 16
Penalty fee
Additional fee for renewal fee
31.08.202117   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Cited inInternational search[A]US3442647  (KLASENS HENDRIK ANNE) [A] 1,2,6,7,9,10,13,14,18-20 * column 5, line 41 - line 46 * * column 6, line 65 - column 7, line 45 *;
 [A]US4411981  (MINEZAKI SHIGEHIRO [JP]) [A] 1,2,6,7,9,10,13,14,18-20 * column 1, line 26 - line 49 *;
 [A]US4425572  (TAKAFUJI YUTAKA [JP], et al) [A] 1,2,6,7,9,10,13,14,18-20 * column 1, line 13 - line 30 * * column 3, line 36 - line 39 *;
 [I]US5744864  (CILLESSEN JOHANNES F M [NL], et al) [I] 1-20 * column 5, line 30 - line 60; figure 4 *;
 [I]EP1134811  (JAPAN SCIENCE & TECH CORP [JP]) [I] 1-4,6-8,10,11,13-17,19,20 * column 4, paragraph 21 - paragraph 23 *;
 [I]WO03098699  (KAWASAKI MASASHI [JP], et al) [I] 1-4,6-8,10,11,13-17,19,20 * abstract *;
 [I]WO2004034449  (DU PONT [US], et al) [I] 1-20 * page 2, line 3 - line 7 * * page 4, line 12 - line 16 * * page 5, line 19 - line 20 * * page 9, line 12 - line 18 * * page 9, line 26 - line 29 *;
 [I]US2004155846  (HOFFMAN RANDY [US], et al) [I] 1-20 * page 3, paragraph 48 - page 4, paragraph 51 *;
 [PI]US2005173734  (YOSHIOKA HIROTO [JP], et al) [PI] 1-4,6-8,10,11,13-17,19,20 * page 2, paragraph 23 - paragraph 30 * * page 3, paragraph 42 - paragraph 43 * * page 4, paragraph 54 - paragraph 55 *;
 [EL]WO2005093852  (HEWLETT PACKARD DEVELOPMENT CO [US], et al) [EL] 1,2,4,5,8-12,15-17,19,20 * the whole document *;
 [A]  - NOMURA K ET AL, "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor", SCIENCE, AMERICAN ASSOCIATION FOR THE ADVANCEMENT OF SCIENCE,, US, (20030523), vol. 300, ISSN 0036-8075, pages 1269 - 1272, XP002322199 [A] 1-20 * the whole document *

DOI:   http://dx.doi.org/10.1126/science.1083212
 [A]  - JOHN F. WAGER, "Transparent Electronics", SCIENCE, (20030523), vol. 300, pages 1245 - 1246, XP001090564 [A] 1-20 * the whole document *

DOI:   http://dx.doi.org/10.1126/science.1085276
 [A]  - MINAMI TADATSUGU, "Transparent and conductive multicomponent oxide films prepared by magnetron sputtering", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, (199907), vol. 17, no. 4, ISSN 0734-2101, pages 1765 - 1772, XP012004618 [A] 1-20 * the whole document *

DOI:   http://dx.doi.org/10.1116/1.581888
 [PI]  - DEHUFF N ET AL, "Transparent thin-film transistors with zinc indium oxide channel layer", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20050311), vol. 97, no. 6, ISSN 0021-8979, pages 64505-1 - 64505-5, XP012070894 [PI] 1-20 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.1862767
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.