EP1836730 - METHOD OF FABRICATING THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL [Right-click to bookmark this link] | |||
Former [2007/39] | THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL AND METHODS | ||
[2021/03] | Status | The application is deemed to be withdrawn Status updated on 29.10.2021 Database last updated on 31.08.2024 | |
Former | Grant of patent is intended Status updated on 08.02.2021 | ||
Former | Examination is in progress Status updated on 27.10.2018 | Most recent event Tooltip | 29.10.2021 | Application deemed to be withdrawn | published on 01.12.2021 [2021/48] | Applicant(s) | For all designated states Hewlett-Packard Development Company, L.P. 10300 Energy Drive Spring TX 77389 / US | [2019/20] |
Former [2007/39] | For all designated states Hewlett-Packard Development Company, L.P. Hewlett-Packard Company, Intellectual Property Administration 20555, S.H. 249 Houston, Texas 77070 / US | Inventor(s) | 01 /
HOFFMAN, Randy 1000 NE Circle Blvd. Corvallis, Oregon 97330-4239 / US | 02 /
MARDILOVICH, Peter 1000 NE Circle Blvd. Corvallis, Oregon 97330-4239 / US | 03 /
CHIANG, Hai 1315 SW Maple Tree Court Corvallis, Oregon 97333 / US | [2007/39] | Representative(s) | HGF HGF Limited 1 City Walk Leeds LS11 9DX / GB | [N/P] |
Former [2010/31] | Pratt, Richard Wilson, et al EIP Fairfax House 15 Fulwood Place London WC1V 6HU / GB | ||
Former [2010/02] | Durville, Guillaume, et al Hewlett-Packard Española, S.L. Legal Department Cami de Can Graells, 1-21 Sant Cugat del Valles 08174 Barcelona / ES | ||
Former [2009/51] | Jackson, Richard Eric, et al Carpmaels & Ransford 43-45 Bloomsbury Square London WC1A 2RA / GB | ||
Former [2007/39] | Jackson, Richard Eric, et al Carpmaels & Ransford, 43 Bloomsbury Square London WC1A 2RA / GB | Application number, filing date | 05792523.2 | 30.08.2005 | [2007/39] | WO2005US30555 | Priority number, date | US20040961507 | 07.10.2004 Original published format: US 961507 | [2007/39] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2006041578 | Date: | 20.04.2006 | Language: | EN | [2006/16] | Type: | A1 Application with search report | No.: | EP1836730 | Date: | 26.09.2007 | Language: | EN | The application published by WIPO in one of the EPO official languages on 20.04.2006 takes the place of the publication of the European patent application. | [2007/39] | Search report(s) | International search report - published on: | EP | 20.04.2006 | Classification | IPC: | H01L29/66, H01L29/786, H01L29/49 | [2021/03] | CPC: |
H01L29/7869 (EP,US);
H01L29/0673 (EP,US);
H01L29/4908 (EP,US);
H01L29/66969 (EP)
|
Former IPC [2007/39] | H01L29/786, H01L29/49 | Designated contracting states | DE, FR, GB [2008/03] |
Former [2007/39] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR | Extension states | AL | Not yet paid | BA | Not yet paid | HR | Not yet paid | MK | Not yet paid | YU | Not yet paid | Title | German: | VERFARHREN ZUR HERTELLUNG EINES DÜNNFILM-TRANSISTORS MIT HALBLEITENDEM MULTIKATIONENOXIDKANAL | [2021/03] | English: | METHOD OF FABRICATING THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL | [2021/03] | French: | PROCÉDÉ DE FABRICATION D'UN TRANSISTOR À COUCHE MINCE AYANT UN CANAL D'OXYDE MULTICATIONIQUE SEMI-CONDUCTEUR | [2021/03] |
Former [2007/39] | DÜNNFILM-TRANSISTOR MIT HALBLEITENDEM MEHRKATIONENOXIDKANAL UND VERFAHREN | ||
Former [2007/39] | THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL AND METHODS | ||
Former [2007/39] | TRANSISTOR A COUCHE MINCE AYANT UN CANAL D'OXYDE MULTICATIONIQUE SEMI-CONDUCTEUR ET PROCEDES | Entry into regional phase | 04.05.2007 | National basic fee paid | 04.05.2007 | Designation fee(s) paid | 04.05.2007 | Examination fee paid | Examination procedure | 04.05.2007 | Examination requested [2007/39] | 17.10.2007 | Despatch of a communication from the examining division (Time limit: M04) | 21.02.2008 | Reply to a communication from the examining division | 15.07.2011 | Despatch of a communication from the examining division (Time limit: M04) | 26.10.2011 | Reply to a communication from the examining division | 20.11.2015 | Despatch of a communication from the examining division (Time limit: M04) | 18.03.2016 | Reply to a communication from the examining division | 17.10.2018 | Despatch of a communication from the examining division (Time limit: M04) | 18.02.2019 | Reply to a communication from the examining division | 28.08.2019 | Despatch of a communication from the examining division (Time limit: M04) | 03.01.2020 | Reply to a communication from the examining division | 16.04.2020 | Despatch of a communication from the examining division (Time limit: M04) | 24.08.2020 | Reply to a communication from the examining division | 09.02.2021 | Communication of intention to grant the patent | 22.06.2021 | Application deemed to be withdrawn, date of legal effect [2021/48] | 16.07.2021 | Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time [2021/48] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 17.10.2007 | Fees paid | Renewal fee | 04.05.2007 | Renewal fee patent year 03 | 25.08.2008 | Renewal fee patent year 04 | 25.08.2009 | Renewal fee patent year 05 | 25.08.2010 | Renewal fee patent year 06 | 25.08.2011 | Renewal fee patent year 07 | 27.08.2012 | Renewal fee patent year 08 | 22.08.2013 | Renewal fee patent year 09 | 26.08.2014 | Renewal fee patent year 10 | 25.08.2015 | Renewal fee patent year 11 | 24.08.2016 | Renewal fee patent year 12 | 23.08.2017 | Renewal fee patent year 13 | 23.08.2018 | Renewal fee patent year 14 | 20.08.2019 | Renewal fee patent year 15 | 19.08.2020 | Renewal fee patent year 16 | Penalty fee | Additional fee for renewal fee | 31.08.2021 | 17   M06   Not yet paid |
Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]US3442647 (KLASENS HENDRIK ANNE) [A] 1,2,6,7,9,10,13,14,18-20 * column 5, line 41 - line 46 * * column 6, line 65 - column 7, line 45 *; | [A]US4411981 (MINEZAKI SHIGEHIRO [JP]) [A] 1,2,6,7,9,10,13,14,18-20 * column 1, line 26 - line 49 *; | [A]US4425572 (TAKAFUJI YUTAKA [JP], et al) [A] 1,2,6,7,9,10,13,14,18-20 * column 1, line 13 - line 30 * * column 3, line 36 - line 39 *; | [I]US5744864 (CILLESSEN JOHANNES F M [NL], et al) [I] 1-20 * column 5, line 30 - line 60; figure 4 *; | [I]EP1134811 (JAPAN SCIENCE & TECH CORP [JP]) [I] 1-4,6-8,10,11,13-17,19,20 * column 4, paragraph 21 - paragraph 23 *; | [I]WO03098699 (KAWASAKI MASASHI [JP], et al) [I] 1-4,6-8,10,11,13-17,19,20 * abstract *; | [I]WO2004034449 (DU PONT [US], et al) [I] 1-20 * page 2, line 3 - line 7 * * page 4, line 12 - line 16 * * page 5, line 19 - line 20 * * page 9, line 12 - line 18 * * page 9, line 26 - line 29 *; | [I]US2004155846 (HOFFMAN RANDY [US], et al) [I] 1-20 * page 3, paragraph 48 - page 4, paragraph 51 *; | [PI]US2005173734 (YOSHIOKA HIROTO [JP], et al) [PI] 1-4,6-8,10,11,13-17,19,20 * page 2, paragraph 23 - paragraph 30 * * page 3, paragraph 42 - paragraph 43 * * page 4, paragraph 54 - paragraph 55 *; | [EL]WO2005093852 (HEWLETT PACKARD DEVELOPMENT CO [US], et al) [EL] 1,2,4,5,8-12,15-17,19,20 * the whole document *; | [A] - NOMURA K ET AL, "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor", SCIENCE, AMERICAN ASSOCIATION FOR THE ADVANCEMENT OF SCIENCE,, US, (20030523), vol. 300, ISSN 0036-8075, pages 1269 - 1272, XP002322199 [A] 1-20 * the whole document * DOI: http://dx.doi.org/10.1126/science.1083212 | [A] - JOHN F. WAGER, "Transparent Electronics", SCIENCE, (20030523), vol. 300, pages 1245 - 1246, XP001090564 [A] 1-20 * the whole document * DOI: http://dx.doi.org/10.1126/science.1085276 | [A] - MINAMI TADATSUGU, "Transparent and conductive multicomponent oxide films prepared by magnetron sputtering", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, (199907), vol. 17, no. 4, ISSN 0734-2101, pages 1765 - 1772, XP012004618 [A] 1-20 * the whole document * DOI: http://dx.doi.org/10.1116/1.581888 | [PI] - DEHUFF N ET AL, "Transparent thin-film transistors with zinc indium oxide channel layer", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20050311), vol. 97, no. 6, ISSN 0021-8979, pages 64505-1 - 64505-5, XP012070894 [PI] 1-20 * the whole document * DOI: http://dx.doi.org/10.1063/1.1862767 |