Extract from the Register of European Patents

EP About this file: EP1707654

EP1707654 - Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  11.09.2009
Database last updated on 18.03.2026
Most recent event   Tooltip11.09.2009No opposition filed within time limitpublished on 14.10.2009  [2009/42]
Applicant(s)For all designated states
Sumitomo Electric Industries, Ltd.
5-33, Kitahama 4-chome, Chuo-ku Osaka-shi
Osaka / JP
[2006/40]
Inventor(s)01 / Meguro, Kiichi c/o Itami Works
Sumitomo Electric Ind., Ltd. 1-1, Koyakita 1-chome
Itami-shi Hyogo / JP
02 / Yamamoto, Yoshiyuki c/o Itami Works
Sumitomo Electric Ind., Ltd. 1-1, Koyakita 1-chome
Itami-shi Hyogo / JP
03 / Imai, Takahiro c/o Itami Works
Sumitomo Electric Ind., Ltd. 1-1, Koyakita 1-chome
Itami-shi Hyogo / JP
 [2006/40]
Representative(s)Cross, Rupert Edward Blount
Boult Wade Tennant
Verulam Gardens
70 Gray's Inn Road
London WC1X 8BT / GB
[N/P]
Former [2006/40]Cross, Rupert Edward Blount
Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road
London WC1X 8BT / GB
Application number, filing date06251555.623.03.2006
[2006/40]
Priority number, dateJP2005009106128.03.2005         Original published format: JP 2005091061
JP2006001059619.01.2006         Original published format: JP 2006010596
[2006/40]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1707654
Date:04.10.2006
Language:EN
[2006/40]
Type: B1 Patent specification 
No.:EP1707654
Date:05.11.2008
Language:EN
[2008/45]
Search report(s)(Supplementary) European search report - dispatched on:EP21.07.2006
ClassificationIPC:C30B29/04, C30B25/02
[2006/40]
CPC:
C30B25/02 (EP,US); C30B25/18 (EP,US); C30B29/04 (EP,US)
Designated contracting statesDE,   FR,   GB [2007/24]
Former [2006/40]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Verfahren zur Herstellung von einkristallinem Diamantsubstrat und dadurch hergestelltes Substrat[2006/40]
English:Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate[2006/40]
French:Procédé de fabrication d'un substrat monocristallin de diamant et le substrat ainsi obtenu[2006/40]
Examination procedure16.10.2006Examination requested  [2006/48]
13.03.2007Despatch of a communication from the examining division (Time limit: M04)
12.07.2007Reply to a communication from the examining division
26.06.2008Communication of intention to grant the patent
12.09.2008Fee for grant paid
12.09.2008Fee for publishing/printing paid
Divisional application(s)EP07019343.8  / EP1867760
Opposition(s)06.08.2009No opposition filed within time limit [2009/42]
Fees paidRenewal fee
25.03.2008Renewal fee patent year 03
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Documents cited:Search[XD] JPH111392  
 [XD] EP0879904  (SUMITOMO ELECTRIC INDUSTRIES et al.) * the whole document *
 [A] US2004177803  (SCARSBROOK GEOFFREY ALAN et al.) [A] 1-12 * the whole document *
 [A] EP0589464  (SUMITOMO ELECTRIC INDUSTRIES et al.) [A] 1-12 * the whole document *
 [AD] JPH0375298  
 [XD]   PATENT ABSTRACTS OF JAPAN vol. 1999, no. 04 30 April 1999 (1999-04-30) [XD] 1-7,11 * abstract *
 [AD]   PATENT ABSTRACTS OF JAPAN vol. 015, no. 238 (C - 0841) 19 June 1991 (1991-06-19) [AD] * abstract *
 [A]   POSTHILL J B ET AL: "Demonstration of a method to fabricate a large-area diamond single crystal", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 271, no. 1, 15 December 1995 (1995-12-15), pages 39 - 49, XP004006369, ISSN: 0040-6090 [A]

DOI:   http://dx.doi.org/10.1016/0040-6090(95)06878-3
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