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Extract from the Register of European Patents

EP About this file: EP1753018

EP1753018 - Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  19.07.2013
Database last updated on 29.10.2024
Most recent event   Tooltip17.07.2015Lapse of the patent in a contracting state
New state(s): HU		published on 19.08.2015  [2015/34]
Applicant(s)For all designated states
Samsung LED Co., Ltd.
314 Maetan 3-dong Yeongtong-gu Suwon
Gyunggi-do 442-743 / KR
[2010/29]
Former [2007/07]For all designated states
Samsung Electro-Mechanics Co., Ltd.
314, Maetan-3-dong, Youngtong-ku
Suwon, Kyungki-do / KR
Inventor(s)01 / Yang, Jong In
402-601 Greenvill
Singal-ri
Kiheung-eup
Yongin
Kyungki-do / KR
02 / Park, Ki Yon
105-801 Booyoung Apt.
2542 Yongam-dong
Sangdang-ku
Cheongjoo Choongchungbook-do / KR
 [2012/37]
Former [2007/07]01 / Yang, Jong In
402-601 Greenvill Singal-ri Kiheung-eup Yongin
Kyungki-do / KR
02 / Park, Ki Yon
105-801 Booyoung Apt. 2542 Yongam-dong Sangdang-ku
Cheongjoo Choongchungbook-do / KR
Representative(s)Powell, Timothy John
Potter Clarkson LLP The Belgrave Centre
Talbot Street
Nottingham NG1 5GG / GB
[N/P]
Former [2012/37]Powell, Timothy John
Potter Clarkson LLP Park View House 58 The Ropewalk Nottingham
NG1 5DD / GB
Former [2007/07]Powell, Timothy John
Eric Potter Clarkson LLP Park View House 58 The Ropewalk
Nottingham NG1 5DD / GB
Application number, filing date06253864.024.07.2006
[2007/07]
Priority number, dateKR2005007424612.08.2005         Original published format: KR 20050074246
[2007/07]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1753018
Date:14.02.2007
Language:EN
[2007/07]
Type: A3 Search report 
No.:EP1753018
Date:31.03.2010
[2010/13]
Type: B1 Patent specification 
No.:EP1753018
Date:12.09.2012
Language:EN
[2012/37]
Search report(s)(Supplementary) European search report - dispatched on:EP26.02.2010
ClassificationIPC:H01L21/20, C30B29/40
[2007/07]
CPC:
C30B29/60 (EP,US); C30B29/403 (EP,US); H01L21/6835 (EP,US);
H01L21/6836 (EP,US); H01L21/78 (EP,US); H01L24/96 (EP,US);
H01L33/0075 (EP,US); H01L2221/68327 (EP,US); H01L2221/68363 (EP,US);
H01L2221/68368 (EP,US); H01L2924/01003 (US); H01L2924/01005 (EP,US);
H01L2924/01006 (EP,US); H01L2924/01012 (EP,US); H01L2924/01013 (EP,US);
H01L2924/01015 (EP,US); H01L2924/01023 (EP,US); H01L2924/01027 (EP,US);
H01L2924/01029 (EP,US); H01L2924/01033 (EP,US); H01L2924/01047 (EP,US);
H01L2924/0106 (EP,US); H01L2924/01073 (EP,US); H01L2924/01079 (EP,US);
H01L2924/01082 (EP,US); H01L2924/10329 (EP,US); H01L2924/12041 (EP,US);
H01L2924/12042 (EP,US); H01L2924/351 (EP,US); H01L2924/3511 (EP,US);
H01L33/0093 (EP,US) (-)
C-Set:
H01L2924/12041, H01L2924/00 (EP,US);
H01L2924/12042, H01L2924/00 (US,EP);
H01L2924/3511, H01L2924/00 (US,EP);
H01L2924/351, H01L2924/00 (US,EP)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2007/07]
TitleGerman:Verfahren zur Herstellung eines auf Nitrid Basis einkristallinen Substrats und Verfahren zur Herstellung einer Halbleiteranordnung auf Nitrid Basis[2007/07]
English:Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device[2007/07]
French:Procédé pour fabriquer un substrat monocristallin à base de nitrure et procédé de fabrication d'un dispositif semiconducteur à base de nitrure[2007/07]
Examination procedure30.09.2010Examination requested  [2010/45]
29.10.2010Amendment by applicant (claims and/or description)
12.05.2011Despatch of a communication from the examining division (Time limit: M04)
18.08.2011Reply to a communication from the examining division
22.02.2012Communication of intention to grant the patent
02.07.2012Fee for grant paid
02.07.2012Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  12.05.2011
Opposition(s)13.06.2013No opposition filed within time limit [2013/34]
Fees paidRenewal fee
14.07.2008Renewal fee patent year 03
10.07.2009Renewal fee patent year 04
30.07.2010Renewal fee patent year 05
29.07.2011Renewal fee patent year 06
30.07.2012Renewal fee patent year 07
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU24.07.2006
AT12.09.2012
BE12.09.2012
CY12.09.2012
CZ12.09.2012
DK12.09.2012
EE12.09.2012
FI12.09.2012
IT12.09.2012
LT12.09.2012
LV12.09.2012
MC12.09.2012
NL12.09.2012
PL12.09.2012
RO12.09.2012
SE12.09.2012
SI12.09.2012
SK12.09.2012
TR12.09.2012
BG12.12.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
PT14.01.2013
[2015/34]
Former [2015/32]AT12.09.2012
BE12.09.2012
CY12.09.2012
CZ12.09.2012
DK12.09.2012
EE12.09.2012
FI12.09.2012
IT12.09.2012
LT12.09.2012
LV12.09.2012
MC12.09.2012
NL12.09.2012
PL12.09.2012
RO12.09.2012
SE12.09.2012
SI12.09.2012
SK12.09.2012
TR12.09.2012
BG12.12.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
PT14.01.2013
Former [2014/14]AT12.09.2012
BE12.09.2012
CY12.09.2012
CZ12.09.2012
DK12.09.2012
EE12.09.2012
FI12.09.2012
IT12.09.2012
LT12.09.2012
LV12.09.2012
MC12.09.2012
NL12.09.2012
PL12.09.2012
RO12.09.2012
SE12.09.2012
SI12.09.2012
SK12.09.2012
BG12.12.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
PT14.01.2013
Former [2013/37]AT12.09.2012
BE12.09.2012
CY12.09.2012
CZ12.09.2012
DK12.09.2012
EE12.09.2012
FI12.09.2012
IT12.09.2012
LT12.09.2012
LV12.09.2012
NL12.09.2012
PL12.09.2012
RO12.09.2012
SE12.09.2012
SI12.09.2012
SK12.09.2012
BG12.12.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
PT14.01.2013
Former [2013/34]AT12.09.2012
BE12.09.2012
CY12.09.2012
CZ12.09.2012
DK12.09.2012
EE12.09.2012
FI12.09.2012
LT12.09.2012
LV12.09.2012
NL12.09.2012
PL12.09.2012
RO12.09.2012
SE12.09.2012
SI12.09.2012
SK12.09.2012
BG12.12.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
PT14.01.2013
Former [2013/31]AT12.09.2012
BE12.09.2012
CY12.09.2012
CZ12.09.2012
EE12.09.2012
FI12.09.2012
LT12.09.2012
LV12.09.2012
NL12.09.2012
PL12.09.2012
RO12.09.2012
SE12.09.2012
SI12.09.2012
SK12.09.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
PT14.01.2013
Former [2013/28]BE12.09.2012
CY12.09.2012
CZ12.09.2012
EE12.09.2012
FI12.09.2012
LT12.09.2012
LV12.09.2012
NL12.09.2012
PL12.09.2012
RO12.09.2012
SE12.09.2012
SI12.09.2012
SK12.09.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
PT14.01.2013
Former [2013/23]BE12.09.2012
CY12.09.2012
CZ12.09.2012
EE12.09.2012
FI12.09.2012
LT12.09.2012
LV12.09.2012
NL12.09.2012
PL12.09.2012
RO12.09.2012
SE12.09.2012
SI12.09.2012
SK12.09.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
Former [2013/22]BE12.09.2012
CY12.09.2012
CZ12.09.2012
EE12.09.2012
FI12.09.2012
LT12.09.2012
LV12.09.2012
NL12.09.2012
SE12.09.2012
SI12.09.2012
GR13.12.2012
ES23.12.2012
IS12.01.2013
Former [2013/20]BE12.09.2012
CY12.09.2012
FI12.09.2012
LT12.09.2012
LV12.09.2012
SE12.09.2012
SI12.09.2012
GR13.12.2012
Former [2013/12]CY12.09.2012
FI12.09.2012
LT12.09.2012
LV12.09.2012
SE12.09.2012
SI12.09.2012
GR13.12.2012
Former [2013/11]CY12.09.2012
FI12.09.2012
LT12.09.2012
LV12.09.2012
SI12.09.2012
GR13.12.2012
Former [2013/10]CY12.09.2012
FI12.09.2012
LT12.09.2012
Former [2013/09]FI12.09.2012
LT12.09.2012
Former [2013/08]LT12.09.2012
Documents cited:Search[XYI]US6071795  (CHEUNG NATHAN W [US], et al) [X] 1-7 * column 4, lines 4-9, 26-31, 38-41,46-53; figures 1-6 * * column 5, lines 21-24,44-49 * * column 5, lines 21-35 * [Y] 13,25 [I] 8;
 [XYI]US2003189212  (YOO MYUNG CHEOL [US]) [X] 23-24,26-33 * paragraphs [0013] , [0033] , [0034] , [0036] , [0040] - [0048]; figures 2a,2b,3,4,6-15, 21-24 * [Y] 13,25 [I] 9-12,14-22;
 [IY]US2004245543  (YOO MYUNG CHEOL [US]) [I] 9-10,14,22 * paragraphs [0031] - [0035] - [0076] , [0 79] , [0080] , [0083]; figures 4-12 * [Y] 13,25;
 [X]  - WONG W S ET AL, "Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (19990906), vol. 75, no. 10, ISSN 0003-6951, pages 1360 - 1362, XP012023432 [X] 1 * figure 1 *

DOI:   http://dx.doi.org/10.1063/1.124693
 [I]  - WONG WILLIAM S ET AL, "Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20010226), vol. 78, no. 9, ISSN 0003-6951, pages 1198 - 1200, XP012028696 [I] 9 * figure 1 *

DOI:   http://dx.doi.org/10.1063/1.1350593
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