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Extract from the Register of European Patents

EP About this file: EP1846596

EP1846596 - METHOD OF MAKING SUBSTITUTIONALLY CARBON-HIGHLY DOPED CRYSTALLINE SI-LAYERS BY CVD [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  22.05.2009
Database last updated on 05.10.2024
Most recent event   Tooltip22.05.2009Withdrawal of applicationpublished on 24.06.2009  [2009/26]
Applicant(s)For all designated states
ASM America, Inc.
3440 East University Drive
Phoenix, AZ 85034-7200 / US
[2007/43]
Inventor(s)01 / BAUER, Matthias
7205 South Golfside Lane
Phoenix, Arizona 85042 / US
02 / WEEKS, Keith, Doran
730 S. Golden Key
Gilbert, Arizona 85233 / US
03 / TOMASINI, Pierre
1445 E. Broadway Road Unit 214
Tempe, Arizona 85281 / US
04 / CODY, Nyles
1395 W. Maria Lane
Tempe, Arizona 85284 / US
 [2008/07]
Former [2007/43]01 / BAUER, Matthias
7205 South Golfside Lane
Phoenix, Arizona 85042 / US
02 / WEEKS, Keith, Doran
730 S. Golden Key
Gilbert, Arizona 85233 / US
03 / TOMASINI, Pierre
1150 W. University Drive
Tempe, Arizona 85281 / US
04 / CODY, Nyles
1395 W. Maria Lane
Tempe, Arizona 85284 / US
Representative(s)polypatent
Braunsberger Feld 29
51429 Bergisch Gladbach / DE
[N/P]
Former [2007/43]Polypatent
Braunsberger Feld 29
51429 Bergisch Gladbach / DE
Application number, filing date06720025.331.01.2006
[2007/43]
WO2006US03465
Priority number, dateUS20050649990P04.02.2005         Original published format: US 649990 P
US20050663434P18.03.2005         Original published format: US 663434 P
US20050668420P04.04.2005         Original published format: US 668420 P
[2007/43]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO2006083909
Date:10.08.2006
Language:EN
[2006/32]
Type: A2 Application without search report 
No.:EP1846596
Date:24.10.2007
Language:EN
The application published by WIPO in one of the EPO official languages on 10.08.2006 takes the place of the publication of the European patent application.
[2007/43]
Search report(s)International search report - published on:EP19.10.2006
ClassificationIPC:C30B29/06, C30B25/02, C23C16/24, H01L29/10, H01L21/205
[2007/43]
CPC:
H01L29/7848 (EP,KR,US); H01L21/02532 (EP,KR,US); C23C16/04 (EP,KR,US);
C23C16/22 (EP,US); C23C16/24 (EP,KR,US); C23C16/32 (EP,US);
C23C16/325 (EP,KR,US); C23C16/45512 (EP,KR,US); C30B25/02 (EP,KR,US);
C30B29/06 (EP,KR,US); H01L21/02381 (EP,KR,US); H01L21/02529 (EP,KR,US);
H01L21/02576 (EP,KR,US); H01L21/02579 (EP,KR,US); H01L21/02598 (KR);
H01L21/0262 (EP,KR,US); H01L21/02636 (EP,KR,US); H01L21/02639 (EP,US);
H01L21/32055 (KR); H01L21/32056 (EP,US); H01L21/3215 (EP,KR,US);
H01L29/165 (EP,KR,US); H01L29/66628 (EP,KR,US); H01L29/66636 (EP,KR,US);
H01L29/7834 (EP,KR,US) (-)
Designated contracting statesDE,   FR [2008/20]
Former [2007/43]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
Extension statesALNot yet paid
BANot yet paid
HRNot yet paid
MKNot yet paid
YUNot yet paid
TitleGerman:VERFAHREN ZUR HERSTELLUNG VON KOHLENSTOFF-SUBSTITUTIONSDOTIERTEN KRISTALLINEN SI-SCHICHTEN DURCH CVD[2007/43]
English:METHOD OF MAKING SUBSTITUTIONALLY CARBON-HIGHLY DOPED CRYSTALLINE SI-LAYERS BY CVD[2007/43]
French:PROCEDES DE PREPARATION DE MATERIAUX CONTENANT DU SI CRISTALLIN SUBSTITUTIONNELLEMENT DOPE AU CARBONE PAR DEPOT CHIMIQUE EN PHASE VAPEUR[2007/43]
Entry into regional phase07.08.2007National basic fee paid 
07.08.2007Designation fee(s) paid 
07.08.2007Examination fee paid 
Examination procedure07.08.2007Examination requested  [2007/43]
07.05.2009Application withdrawn by applicant  [2009/26]
Fees paidRenewal fee
14.01.2008Renewal fee patent year 03
14.01.2009Renewal fee patent year 04
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Cited inInternational search[Y]US2002168868  (TODD MICHAEL A [US]) [Y] 22-47 * paragraph [0046]; claims 1-7,25,33; table 1 *;
 [X]US2004262694  (CHIDAMBARAM PR [US]) [X] 48-52 * figure 2; claim 1 *;
 [A]US2005023520  (LEE MIN-HUNG [TW], et al) [A] 48-52* the whole document *;
 [DXY]  - J. HOYT, Substitutional Carbon Incorporation and Electronic Characterization of Si1-yCy/Si Heterojunctions" in "SILICON-GERMANIUM ALLOY, NEW YORK, US, TAYLOR AND FRANCIS BOOKS, (2002), XP008065143 [DX] 1-7,10-21 * page 59 - page 89 * [Y] 22-47
 [X]  - YAGI S ET AL, "Substitutional C incorporation into Si1-yCy alloys using novel carbon source, 1,3-disilabutane", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS, SHORT NOTES & REVIEW PAPERS) JAPAN SOC. APPL. PHYS JAPAN, (200407), vol. 43, no. 7A, ISSN 0021-4922, pages 4153 - 4154, XP002385977 [X] 1-21 * the whole document *

DOI:   http://dx.doi.org/10.1143/JJAP.43.4153
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.