EP1898456 - PLASMA NITRIDING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 02.05.2014 Database last updated on 02.11.2024 | Most recent event Tooltip | 02.05.2014 | Application deemed to be withdrawn | published on 04.06.2014 [2014/23] | Applicant(s) | For all designated states TOHOKU UNIVERSITY 1-1, Katahira 2-chome Aoba-ku Sendai, Miyagi 980-8577 / JP | For all designated states TOKYO ELECTRON LIMITED 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 / JP | [2008/11] | Inventor(s) | 01 /
OHMI, Tadahiro 1-17-301, Komegafukuro 2-chome, Aoba-ku Sendai-shi, Miyagi 980-0813 / JP | 02 /
TERAMOTO, Akinobu 1-22-K6, Heisei 1-chome, Miyagino-ku Sendai-shi, Miyagi 983-0037 / JP | 03 /
HONDA, Minoru c/o TOKYO ELECTRON AT LIMITED, 1-8 Fuso-cho Amagasaki-shi, Hyogo 660-0891 / JP | 04 /
NAKANISHI, Toshio c/o TOKYO ELECTRON AT LIMITED, 1-8 Fuso-cho Amagasaki-shi, Hyogo 660-0891 / JP | [2008/11] | Representative(s) | Hoffmann Eitle Patent- und Rechtsanwälte PartmbB Arabellastrasse 30 81925 München / DE | [N/P] |
Former [2008/11] | HOFFMANN EITLE Patent- und Rechtsanwälte Arabellastrasse 4 81925 München / DE | Application number, filing date | 06757104.2 | 07.06.2006 | [2008/11] | WO2006JP311397 | Priority number, date | JP20050168094 | 08.06.2005 Original published format: JP 2005168094 | [2008/11] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2006132262 | Date: | 14.12.2006 | Language: | JA | [2006/50] | Type: | A1 Application with search report | No.: | EP1898456 | Date: | 12.03.2008 | Language: | EN | [2008/11] | Search report(s) | International search report - published on: | JP | 14.12.2006 | (Supplementary) European search report - dispatched on: | EP | 21.10.2009 | Classification | IPC: | H01L21/318 | [2008/11] | CPC: |
H01L21/0217 (EP,KR,US);
H01L21/02252 (EP,KR,US);
H01L21/02247 (EP,KR,US);
H01L21/02315 (KR);
H01L21/28202 (KR);
H01L21/3185 (US)
| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR [2008/11] | Extension states | RS | Not yet paid | Title | German: | PLASMANITRIERUNGSVERFAHREN, VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS UND PLASMAVERARBEITUNGSVORRICHTUNG | [2008/11] | English: | PLASMA NITRIDING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS | [2008/11] | French: | PROCÉDÉ DE NITRURATION AU PLASMA, PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR ET APPAREIL DE TRAITEMENT AU PLASMA | [2008/11] | Entry into regional phase | 20.12.2007 | Translation filed | 20.12.2007 | National basic fee paid | 20.12.2007 | Search fee paid | 20.12.2007 | Designation fee(s) paid | 20.12.2007 | Examination fee paid | Examination procedure | 20.12.2007 | Examination requested [2008/11] | 26.02.2008 | Amendment by applicant (claims and/or description) | 05.03.2010 | Despatch of a communication from the examining division (Time limit: M04) | 27.05.2010 | Reply to a communication from the examining division | 04.11.2013 | Despatch of a communication from the examining division (Time limit: M04) | 02.01.2014 | Application deemed to be withdrawn, date of legal effect [2014/23] | 29.01.2014 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2014/23] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 05.03.2010 | Fees paid | Renewal fee | 26.03.2008 | Renewal fee patent year 03 | 25.06.2009 | Renewal fee patent year 04 | 31.03.2010 | Renewal fee patent year 05 | 27.06.2011 | Renewal fee patent year 06 | 31.03.2012 | Renewal fee patent year 07 | Penalty fee | Additional fee for renewal fee | 30.06.2013 | 08   M06   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP2004095889 (FASL JAPAN LTD) [A] 1-18 * abstract *; | [XA]EP1432023 (TOKYO ELECTRON LTD [JP]) [X] 1,2,18 [A] 3-7; | [A]US2005118837 (TODD MICHAEL A [US], et al) [A] 1-18* claims 38,39,105 * | Examination | JP2004193413 |