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Extract from the Register of European Patents

EP About this file: EP1935034

EP1935034 - METHOD OF MANUFACTURING N-TYPE MULTICRYSTALLINE SILICON SOLAR CELLS [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  19.10.2012
Database last updated on 12.07.2024
Most recent event   Tooltip08.08.2014Change - lapse in a contracting state
State(s) deleted from list of lapses: ES		published on 10.09.2014  [2014/37]
Applicant(s)For all designated states
Stichting Energieonderzoek Centrum Nederland
Westerduinweg 3
1755 LE Petten / NL
[2008/26]
Inventor(s)01 / KOMATSU, Yuji
Jan Van Goyenstraat 12
NL-1816 EE Alkmaar / NL
02 / GOLDBACH, Hanno, Dietrich
Rijnhof 18
NL-6715 LS Ede / NL
03 / SCHROPP, Rudolf, Emmanuel, Isidore
Rosariumlaan 15
NL-3972 GE Driebergen / NL
04 / GEERLIGS, Lambert, Johan
P.C. Boutensstraat 73
NL-1822 KH Alkmaar / NL
 [2008/26]
Representative(s)Ketelaars, Maarten F.J.M.
Nederlandsch Octrooibureau
Postbus 29720
2502 LS Den Haag / NL
[N/P]
Former [2011/50]Ketelaars, Maarten F.J.M.
Nederlandsch Octrooibureau Postbus 29720
2502 LS Den Haag / NL
Former [2008/26]Ketelaars, Maarten F.J.M.
Nederlandsch Octrooibureau Postbus 29720
2502 LS Den Haag / NL
Application number, filing date06799532.404.10.2006
[2008/26]
WO2006NL50242
Priority number, dateNL2005103020014.10.2005         Original published format: NL 1030200
[2008/26]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2007043881
Date:19.04.2007
Language:EN
[2007/16]
Type: A1 Application with search report 
No.:EP1935034
Date:25.06.2008
Language:EN
The application published by WIPO in one of the EPO official languages on 19.04.2007 takes the place of the publication of the European patent application.
[2008/26]
Type: B1 Patent specification 
No.:EP1935034
Date:14.12.2011
Language:EN
[2011/50]
Search report(s)International search report - published on:EP19.04.2007
ClassificationIPC:H01L31/072, H01L31/18
[2008/26]
CPC:
H01L31/18 (EP,KR,US); H01L31/072 (KR); H01L31/0747 (EP,US);
H01L31/1804 (EP,US); H01L31/186 (EP,US); H01L31/1868 (EP,US);
Y02E10/547 (EP,US); Y02P70/50 (EP,US) (-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2008/26]
TitleGerman:VERFAHREN ZUM HERSTELLEN VON MULTIKRISTALLINEN SILIZIUM-SOLARZELLEN DES N-TYPS[2008/26]
English:METHOD OF MANUFACTURING N-TYPE MULTICRYSTALLINE SILICON SOLAR CELLS[2008/26]
French:PROCEDE DE FABRICATION DE CELLULES SOLAIRES AU SILICIUM POLYCRISTALLIN DE TYPE N[2008/26]
Entry into regional phase15.04.2008National basic fee paid 
15.04.2008Designation fee(s) paid 
15.04.2008Examination fee paid 
Examination procedure14.08.2007Request for preliminary examination filed
International Preliminary Examining Authority: EP
15.04.2008Amendment by applicant (claims and/or description)
15.04.2008Examination requested  [2008/26]
03.12.2008Despatch of a communication from the examining division (Time limit: M06)
15.06.2009Reply to a communication from the examining division
02.03.2011Despatch of a communication from the examining division (Time limit: M02)
02.05.2011Reply to a communication from the examining division
08.07.2011Communication of intention to grant the patent
02.11.2011Fee for grant paid
02.11.2011Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  03.12.2008
Opposition(s)17.09.2012No opposition filed within time limit [2012/47]
Fees paidRenewal fee
29.08.2008Renewal fee patent year 03
31.07.2009Renewal fee patent year 04
01.08.2010Renewal fee patent year 05
01.08.2011Renewal fee patent year 06
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU04.10.2006
AT14.12.2011
BE14.12.2011
CY14.12.2011
CZ14.12.2011
DK14.12.2011
EE14.12.2011
FI14.12.2011
LT14.12.2011
LV14.12.2011
PL14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
PT16.04.2012
[2014/37]
Former [2014/34]HU04.10.2006
ES05.10.2008
AT14.12.2011
BE14.12.2011
CY14.12.2011
CZ14.12.2011
DK14.12.2011
EE14.12.2011
FI14.12.2011
LT14.12.2011
LV14.12.2011
PL14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
PT16.04.2012
Former [2014/33]AT14.12.2011
BE14.12.2011
CY14.12.2011
CZ14.12.2011
DK14.12.2011
EE14.12.2011
FI14.12.2011
LT14.12.2011
LV14.12.2011
PL14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
PT16.04.2012
Former [2014/27]ES05.10.2008
AT14.12.2011
BE14.12.2011
CY14.12.2011
CZ14.12.2011
DK14.12.2011
EE14.12.2011
FI14.12.2011
LT14.12.2011
LV14.12.2011
PL14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
PT16.04.2012
Former [2013/29]AT14.12.2011
BE14.12.2011
CY14.12.2011
CZ14.12.2011
DK14.12.2011
EE14.12.2011
FI14.12.2011
LT14.12.2011
LV14.12.2011
PL14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
PT16.04.2012
Former [2013/07]AT14.12.2011
BE14.12.2011
CY14.12.2011
CZ14.12.2011
DK14.12.2011
EE14.12.2011
LT14.12.2011
LV14.12.2011
PL14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
PT16.04.2012
Former [2012/49]BE14.12.2011
CY14.12.2011
CZ14.12.2011
DK14.12.2011
EE14.12.2011
LT14.12.2011
LV14.12.2011
PL14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
PT16.04.2012
Former [2012/37]BE14.12.2011
CY14.12.2011
CZ14.12.2011
EE14.12.2011
LT14.12.2011
LV14.12.2011
PL14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
PT16.04.2012
Former [2012/36]BE14.12.2011
CY14.12.2011
CZ14.12.2011
EE14.12.2011
LT14.12.2011
LV14.12.2011
RO14.12.2011
SE14.12.2011
SI14.12.2011
SK14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
Former [2012/35]BE14.12.2011
CY14.12.2011
CZ14.12.2011
EE14.12.2011
LT14.12.2011
LV14.12.2011
SE14.12.2011
SI14.12.2011
BG14.03.2012
GR15.03.2012
IS14.04.2012
Former [2012/34]BE14.12.2011
CY14.12.2011
CZ14.12.2011
LT14.12.2011
LV14.12.2011
SE14.12.2011
SI14.12.2011
GR15.03.2012
IS14.04.2012
Former [2012/30]BE14.12.2011
CY14.12.2011
LT14.12.2011
LV14.12.2011
SE14.12.2011
SI14.12.2011
GR15.03.2012
Former [2012/28]CY14.12.2011
LT14.12.2011
LV14.12.2011
SE14.12.2011
SI14.12.2011
GR15.03.2012
Former [2012/24]LT14.12.2011
LV14.12.2011
SE14.12.2011
SI14.12.2011
GR15.03.2012
Former [2012/20]LT14.12.2011
Cited inInternational search[XY]US5705828  (NOGUCHI SHIGERU [JP], et al) [X] 10 * column 5, line 7 - line 60; figures 2A,2B; table 1 * [Y] 1,5;
 [XA]EP1560272  (SANYO ELECTRIC CO [JP]) [X] 10 * paragraph [0057] - paragraph [0069]; figure 1 * [A] 1,5,8;
 [Y]  - CARNEL L ET AL, "PERSPECTIVES FOR A-SI/C-SI HETEROJUNCTION SOLAR CELLS WITH P OR N TYPE BASE", PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2005. CONFERENCE RECORD OF THE THIRTY-FIRST IEEE LAKE BUENA VISTA, FL, USA 3-7 JAN. 2005, PISCATAWAY, NJ, USA,IEEE, US, (20050103), ISBN 0-7803-8707-4, pages 1157 - 1160, XP010824097 [Y] 1-10 * page 1159; figure 2 *

DOI:   http://dx.doi.org/10.1109/PVSC.2005.1488343
 [Y]  - MARTINUZZI S ET AL, "N-TYPE MULTICRYSTALLINE SILICON WAFERS FOR SOLAR CELLS", PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2005. CONFERENCE RECORD OF THE THIRTY-FIRST IEEE LAKE BUENA VISTA, FL, USA 3-7 JAN. 2005, PISCATAWAY, NJ, USA,IEEE, US, (20050103), ISBN 0-7803-8707-4, pages 919 - 922, XP010822914 [Y] 1-10 * page 919 *

DOI:   http://dx.doi.org/10.1109/PVSC.2005.1488281
 [Y]  - AZZIZI A ET AL, "ANALYSIS OF CELL-PROCESS INDUCED CHANGES IN MULTICRYSTALLINE SILICON", WORLD CONFERENCE AND EXHIBITION ON PHOTOVOLTAIC SOLAR ENERGY CONVERSION, XX, XX, (20030511), pages 1384 - 1387, XP002379693 [Y] 2-4,6,7 * the whole document *
 [DXA]  - TAGUCHI M ET AL, "An approach for the higher efficiency in the HIT cells", PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2005. CONFERENCE RECORD OF THE THIRTY-FIRST IEEE LAKE BUENA VISTA, FL, USA 3-7 JAN. 2005, PISCATAWAY, NJ, USA,IEEE, US, (20050103), ISBN 0-7803-8707-4, pages 866 - 871, XP010822903 [DX] 10 * the whole document * [A] 1,5,8

DOI:   http://dx.doi.org/10.1109/PVSC.2005.1488270
 [A]  - CENTURIONI E ET AL, "SILICON HETEROJUNCTION SOLAR CELL: A NEW BUFFER LAYER CONCEPT WITH LOW-TEMPERATURE EPITAXIAL SILICON", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, (200411), vol. 51, no. 11, ISSN 0018-9383, pages 1818 - 1824, XP001214290 [A] 1-10 * paragraphs [00II] , [EXPERIMENTAL] *

DOI:   http://dx.doi.org/10.1109/TED.2004.836801
 [A]  - CUEVAS ANDRES ET AL, "Millisecond minority carrier lifetimes in n-type multicrystalline silicon", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20021223), vol. 81, no. 26, ISSN 0003-6951, pages 4952 - 4954, XP012032866 [A] 1,2,9 * page 4952 - page 4953 *

DOI:   http://dx.doi.org/10.1063/1.1529089
 [A]  - T. BUCK ET AL., "14,4% screen printed n-type mc-Si solar cells with Al back junction on thin large area wafers", PRESENTED AT 15TH INT. PHOTOVOLTAIC SCIENCE AND ENGINEERING CONF. AND SOLAR ENERGY EXHIB., SHANGHAI, CHINA, (20051010), URL: http://www.ecn.nl/docs/library/report/2005/rx05115.pdf, (20060508), XP002380691 [A] 9 * the whole document *
by applicant   - M. TAGUCHI ET AL., PROCEEDINGS OF 31ST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, (2005), pages 866 - 871
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.