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Extract from the Register of European Patents

EP About this file: EP1917683

EP1917683 - POWER SEMICONDUCTOR DEVICE WITH INTERCONNECTED GATE TRENCHES [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  01.12.2017
Database last updated on 17.09.2024
FormerExamination is in progress
Status updated on  16.12.2016
Most recent event   Tooltip01.12.2017Withdrawal of applicationpublished on 03.01.2018  [2018/01]
Applicant(s)For all designated states
Infineon Technologies Americas Corp.
101 N. Sepulveda Boulevard
El Segundo, CA 90245 / US
[2017/03]
Former [2008/19]For all designated states
INTERNATIONAL RECTIFIER CORPORATION
233 Kansas Street
El Segundo, CA 90245 / US
Inventor(s)01 / MA, Ling
941 West Carson Street 310
Torrance, California 90502 / US
02 / AMALI, Adam I.
4766 West 134th Street, Apt. 4
Hawthorne, California 90250 / US
03 / TURNER, Russell
1 Trelawny Close, Castle Oak, Usk
Monmouthshire, South Wales NP15 1SP / GB
 [2008/19]
Representative(s)Dr. Weitzel & Partner
Patent- und Rechtsanwälte mbB
Friedenstrasse 10
89522 Heidenheim / DE
[N/P]
Former [2010/20]Weitzel, Wolfgang, et al
Dr. Weitzel & Partner Patent- und Rechtsanwälte Friedenstrasse 10
89522 Heidenheim / DE
Former [2008/19]Feldkamp, Rainer, et al
Garmischer Strasse 4
80339 München / DE
Application number, filing date06801678.116.08.2006
[2008/19]
WO2006US32060
Priority number, dateUS20050709020P17.08.2005         Original published format: US 709020 P
US2006050474015.08.2006         Original published format: US 504740
[2008/19]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO2007022316
Date:22.02.2007
Language:EN
[2007/08]
Type: A2 Application without search report 
No.:EP1917683
Date:07.05.2008
Language:EN
The application published by WIPO in one of the EPO official languages on 22.02.2007 takes the place of the publication of the European patent application.
[2008/19]
Search report(s)International search report - published on:US12.07.2007
(Supplementary) European search report - dispatched on:EP06.10.2008
ClassificationIPC:H01L29/78, H01L29/423, // H01L29/40, H01L29/417, H01L29/739
[2008/45]
CPC:
H01L29/7813 (EP,US); H01L29/4238 (EP); H01L29/7811 (EP,US);
H01L29/407 (EP); H01L29/41766 (EP); H01L29/4236 (EP);
H01L29/42368 (EP); H01L29/42372 (EP); H01L29/7397 (EP) (-)
Former IPC [2008/19]H01L29/66
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2008/19]
TitleGerman:STROMHALBLEITERVORRICHTUNG MIT VERBUNDENEN GATE-GRÄBEN[2008/19]
English:POWER SEMICONDUCTOR DEVICE WITH INTERCONNECTED GATE TRENCHES[2008/19]
French:DISPOSITIF SEMI-CONDUCTEUR DE PUISSANCE COMPRENANT DES TRANCHEES DE GRILLE INTERCONNECTEES[2008/19]
Entry into regional phase17.03.2008National basic fee paid 
17.03.2008Search fee paid 
17.03.2008Designation fee(s) paid 
17.03.2008Examination fee paid 
Examination procedure17.03.2008Examination requested  [2008/19]
11.11.2008Amendment by applicant (claims and/or description)
25.11.2010Invitation to provide information on prior art
18.03.2011Reply to the invitation to provide information on prior art
20.12.2016Despatch of a communication from the examining division (Time limit: M04)
17.02.2017Reply to a communication from the examining division
23.11.2017Application withdrawn by applicant  [2018/01]
24.11.2017Cancellation of oral proceeding that was planned for 15.12.2017
15.12.2017Date of oral proceedings (cancelled)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  20.12.2016
Fees paidRenewal fee
25.08.2008Renewal fee patent year 03
07.08.2009Renewal fee patent year 04
25.08.2010Renewal fee patent year 05
25.08.2011Renewal fee patent year 06
27.08.2012Renewal fee patent year 07
27.08.2013Renewal fee patent year 08
27.08.2014Renewal fee patent year 09
27.08.2015Renewal fee patent year 10
22.08.2016Renewal fee patent year 11
22.08.2017Renewal fee patent year 12
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Documents cited:Search[A]JPH01192174  (HITACHI LTD) [A] 1,9 * abstract *;
 [X]WO0042665  (FRAUNHOFER GES FORSCHUNG [DE], et al) [X] 1-10 * page 7, line 3 from bottom - page 9, line 25; figure 1 * * page 10, last line - page 16, line 4; figures 4A-4D * * page 17, line 10 - page 18, line 18; figures 6, 7 *;
 [A]US6309929  (HSU CHIH-WEI [TW], et al) [A] 1,3* column 5, line 35 - column 6, line 47; figures 6-9 *;
 [X]EP1351313  (SILICONIX INC [US]) [X] 1-10 * paragraph [0022] - paragraph [0024]; figure 9 * * paragraph [0031]; figures 16A-16C * * paragraph [0036] - paragraph [0055]; figures 20A-20F,21A-21I * * paragraph [0091] - paragraph [0095]; figures 25A-25F *
International search[X]US6833583  ;
 [Y]US6838735  ;
 [Y]US6580123  ;
 [A]US2003127702  ;
 [A]US5430315
ExaminationJPH10214968
 US2004173844
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.