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EP1949460
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EP About this file: EP1949460
| EP1949460 - METHOD FOR FABRICATING HIGH-QUALITY SEMICONDUCTOR LIGHT-EMITTING DEVICES ON SILICON SUBSTRATES [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 07.09.2012 Database last updated on 12.11.2024 | Most recent event Tooltip | 07.09.2012 | Withdrawal of application | published on 10.10.2012 [2012/41] | Applicant(s) | For all designated states Lattice Power (Jiangxi) Corporation Institute of Materials Science North Area of Nanchang University No. 235 East Nanjin Road Nanchang, Jiangxi 330047 / CN | [2008/31] | Inventor(s) | 01 /
JIANG, Fengyi Institute of Material Science North Area of Nanchang University No. 235, East Nanjing Road Nanchang Jiangxi 330047 / CN | 02 /
SHAO, Bilin Institute of Material Science North Area of Nanchang University No. 235, East Nanjing Road Nanchang Jiangxi 330047 / CN | 03 /
WANG, Li Institute of Material Science North Area of Nanchang University No. 235, East Nanjing Road Nanchang Jiangxi 330047 / CN | 04 /
FANG, Wenqing Institute of Material Science North Area of Nanchang University No. 235, East Nanjing Road Nanchang Jiangxi 330047 / CN | [2008/31] | Representative(s) | Davies, Simon Robert D Young & Co LLP 120 Holborn London EC1N 2DY / GB | [N/P] |
| Former [2008/31] | Davies, Simon Robert D Young & Co 120 Holborn London, EC1N 2DY / GB | Application number, filing date | 06817841.7 | 17.11.2006 | [2008/31] | WO2006CN03098 | Priority number, date | CN20051110566 | 17.11.2005 Original published format: CN200510110566 | [2008/31] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2007056956 | Date: | 24.05.2007 | Language: | EN | [2007/21] | Type: | A1 Application with search report | No.: | EP1949460 | Date: | 30.07.2008 | Language: | EN | The application published by WIPO in one of the EPO official languages on 24.05.2007 takes the place of the publication of the European patent application. | [2008/31] | Search report(s) | International search report - published on: | CN | 24.05.2007 | Classification | IPC: | H01L33/00 | [2008/31] | CPC: |
H01L33/0066 (EP,US);
H01L21/02381 (EP,US);
H01L21/02433 (EP,US);
H01L21/02458 (EP,US);
H01L21/02472 (EP,US);
H01L21/02491 (EP,US);
H01L21/02502 (EP,US);
H01L21/02505 (EP,US);
H01L21/0254 (EP,US);
H01L21/02554 (EP,US);
H01L21/02565 (EP,US);
H01L33/0087 (EP,US);
H01L33/12 (EP,US)
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| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR [2008/31] | Title | German: | VERFAHREN ZUR HERSTELLUNG VON QUALITATIV HOCHWERTIGEN HALBLEITER-LEUCHTBAUELEMENTEN AUF SILIZIUMSUBSTRATEN | [2008/31] | English: | METHOD FOR FABRICATING HIGH-QUALITY SEMICONDUCTOR LIGHT-EMITTING DEVICES ON SILICON SUBSTRATES | [2008/31] | French: | PROCEDE DE FABRICATION DE DELS A SEMI-CONDUCTEURS DE HAUTE QUALITE, SUR DES SUBSTRATS DE SILICIUM | [2008/31] | Entry into regional phase | 20.05.2008 | National basic fee paid | 20.05.2008 | Search fee paid | 20.05.2008 | Designation fee(s) paid | 20.05.2008 | Examination fee paid | Examination procedure | 19.05.2008 | Amendment by applicant (claims and/or description) | 20.05.2008 | Examination requested [2008/31] | 14.08.2012 | Application withdrawn by applicant [2012/41] | Fees paid | Renewal fee | 20.11.2008 | Renewal fee patent year 03 | 17.11.2009 | Renewal fee patent year 04 | 15.11.2010 | Renewal fee patent year 05 | 28.11.2011 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]JP2004207508 (SHINETSU HANDOTAI KK); | [A]CN1667849 (SHINETSU SEMICONDUCTOR CO LTD [JP]); | [A]CN1159251 (UNIV OF CENTRAL FLORIDA [US]) |