blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability

2022.02.11

More...
blank News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...
blank Related links

Release notes
European Patent Register Assistant
European Patent Register Resource Book
European Patent Register – pocket guide
FAQ - European Patent Register
Federated Register (Flyer)
Global Dossier (Flyer)
Register events
Deep link coverage
Federated Register content
The Patent Information Tour
Fair use charter

Extract from the Register of European Patents

EP About this file: EP1964179

EP1964179 - METHODS OF MANUFACTURING REDUCED-RESISTANCE FINFETS [Right-click to bookmark this link]
Former [2008/36]REDUCED-RESISTANCE FINFETS AND METHODS OF MANUFACTURING THE SAME
[2009/19]
StatusNo opposition filed within time limit
Status updated on  09.07.2010
Database last updated on 05.10.2024
Most recent event   Tooltip30.09.2011Lapse of the patent in a contracting state
New state(s): TR		published on 02.11.2011  [2011/44]
Applicant(s)For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
[N/P]
Former [2008/36]For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
Inventor(s)01 / MANDELMAN, Jack, Allan
11 Claremont Drive
Flat Rock, North Carolina 28731 / US
02 / CHENG, Kangguo
35B Hudson View Drive
Beacon, New York 12508 / US
03 / HSU, Louis, Lu-Chen
7 Crosby Court
Fishkill, New York 12524 / US
04 / YANG, Haining
36 Robinson Lane
Wappingers Falls, New York 12590 / US
 [2008/36]
Representative(s)Burt, Roger James
IBM United Kingdom Limited Intellectual Property Department Hursley Park Winchester
Hampshire SO21 2JN / GB
[N/P]
Former [2008/36]Burt, Roger James
IBM United Kingdom Limited Intellectual Property Law Hursley Park Winchester
Hampshire SO21 2JN / GB
Application number, filing date06830385.805.12.2006
[2008/36]
WO2006EP69339
Priority number, dateUS2005031624422.12.2005         Original published format: US 316244
[2008/36]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2007071555
Date:28.06.2007
Language:EN
[2007/26]
Type: A1 Application with search report 
No.:EP1964179
Date:03.09.2008
Language:EN
The application published by WIPO in one of the EPO official languages on 28.06.2007 takes the place of the publication of the European patent application.
[2008/36]
Type: B1 Patent specification 
No.:EP1964179
Date:02.09.2009
Language:EN
[2009/36]
Search report(s)International search report - published on:EP28.06.2007
ClassificationIPC:H01L21/336, H01L29/78, H01L29/45, H01L21/285, H01L21/8234
[2009/19]
CPC:
H01L29/785 (EP,KR,US); H01L29/41791 (EP,KR,US); H01L21/823418 (EP,KR,US);
H01L21/823437 (EP,KR,US); H01L29/665 (EP,KR,US); H01L29/6653 (EP,KR,US);
H01L29/66795 (EP,KR,US); H01L29/78618 (EP,KR,US); H01L2029/7858 (EP,KR,US);
Y10S438/96 (EP,KR,US) (-)
Former IPC [2008/36]H01L29/786, H01L21/336, H01L29/45, H01L21/285, H01L21/8234
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2008/36]
Extension statesALNot yet paid
BANot yet paid
HRNot yet paid
MKNot yet paid
RSNot yet paid
TitleGerman:HERSTELLUNGSVERFAHREN FÜR FINFETS MIT VERRINGERTEM WIDERSTAND[2009/19]
English:METHODS OF MANUFACTURING REDUCED-RESISTANCE FINFETS[2009/19]
French:PROCÉDÉ DE FABRICATION DE FINFET À RÉSISTANCE RÉDUITE[2009/19]
Former [2008/36]FINFETS MIT VERRINGERTEM WIDERSTAND UND HERSTELLUNGSVERFAHREN DAFÜR
Former [2008/36]REDUCED-RESISTANCE FINFETS AND METHODS OF MANUFACTURING THE SAME
Former [2008/36]FINFET À RÉSISTANCE RÉDUITE ET LEUR PROCÉDÉ DE FABRICATION
Entry into regional phase19.06.2008National basic fee paid 
19.06.2008Designation fee(s) paid 
19.06.2008Examination fee paid 
Examination procedure19.06.2008Amendment by applicant (claims and/or description)
19.06.2008Examination requested  [2008/36]
26.05.2009Communication of intention to grant the patent
23.07.2009Fee for grant paid
23.07.2009Fee for publishing/printing paid
Opposition(s)03.06.2010No opposition filed within time limit [2010/32]
Fees paidRenewal fee
12.12.2008Renewal fee patent year 03
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT02.09.2009
BE02.09.2009
CY02.09.2009
CZ02.09.2009
DK02.09.2009
EE02.09.2009
FI02.09.2009
IT02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
TR02.09.2009
GR03.12.2009
IE05.12.2009
LU05.12.2009
ES13.12.2009
BG31.12.2009
IS02.01.2010
PT04.01.2010
HU03.03.2010
[2011/44]
Former [2011/33]AT02.09.2009
BE02.09.2009
CY02.09.2009
CZ02.09.2009
DK02.09.2009
EE02.09.2009
FI02.09.2009
IT02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
GR03.12.2009
IE05.12.2009
LU05.12.2009
ES13.12.2009
BG31.12.2009
IS02.01.2010
PT04.01.2010
HU03.03.2010
Former [2011/22]AT02.09.2009
BE02.09.2009
CY02.09.2009
CZ02.09.2009
DK02.09.2009
EE02.09.2009
FI02.09.2009
IT02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
GR03.12.2009
IE05.12.2009
LU05.12.2009
ES13.12.2009
BG31.12.2009
IS02.01.2010
PT04.01.2010
Former [2011/18]AT02.09.2009
BE02.09.2009
CY02.09.2009
CZ02.09.2009
DK02.09.2009
EE02.09.2009
FI02.09.2009
IT02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
GR03.12.2009
IE05.12.2009
ES13.12.2009
BG31.12.2009
IS02.01.2010
PT04.01.2010
Former [2011/06]AT02.09.2009
BE02.09.2009
CY02.09.2009
CZ02.09.2009
DK02.09.2009
EE02.09.2009
FI02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
GR03.12.2009
IE05.12.2009
ES13.12.2009
IS02.01.2010
PT04.01.2010
Former [2010/42]AT02.09.2009
BE02.09.2009
CY02.09.2009
CZ02.09.2009
DK02.09.2009
EE02.09.2009
FI02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
ES13.12.2009
IS02.01.2010
PT04.01.2010
Former [2010/30]AT02.09.2009
BE02.09.2009
CY02.09.2009
CZ02.09.2009
EE02.09.2009
FI02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
ES13.12.2009
IS02.01.2010
PT04.01.2010
Former [2010/28]BE02.09.2009
CY02.09.2009
CZ02.09.2009
EE02.09.2009
FI02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
ES13.12.2009
IS02.01.2010
PT04.01.2010
Former [2010/27]CY02.09.2009
CZ02.09.2009
EE02.09.2009
FI02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
RO02.09.2009
SE02.09.2009
SI02.09.2009
SK02.09.2009
ES13.12.2009
IS02.01.2010
PT04.01.2010
Former [2010/20]CY02.09.2009
EE02.09.2009
FI02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
SE02.09.2009
SI02.09.2009
ES13.12.2009
Former [2010/19]CY02.09.2009
FI02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
SE02.09.2009
SI02.09.2009
ES13.12.2009
Former [2010/15]CY02.09.2009
FI02.09.2009
LT02.09.2009
LV02.09.2009
NL02.09.2009
PL02.09.2009
SE02.09.2009
SI02.09.2009
Cited inInternational search[A]WO0017914  (ULTRATECH STEPPER INC [US]) [A] 1-7 * page 5, line 11 - line 13 *;
 [A]US6255214  (WIECZOREK KARSTEN [DE], et al) [A] 1-7 * column 4, line 15 - line 34 *;
 [XY]US2004036126  (CHAU ROBERT S [US], et al) [X] 1,2,8-12,14,15 * paragraph [0029]; figure 4A * [Y] 13;
 [X]US2004099885  (YEO YEE-CHIA [TW], et al) [X] 1,2,9-12,14,15 * paragraph [0062] *;
 [A]US2005090067  (JAWARANI DHARMESH [US]) [A] 1-7 * paragraph [0017] - paragraph [0018] *;
 [YA]US2005173768  (LEE CHOONG-HO [KR], et al) [Y] 13 * paragraphs [0026] - [0028] * * paragraphs [0041] , [0042] * [A] 8,15;
 [A]US2005255643  (AHN YOUNG-JOON [KR], et al) [A] 1,8,9,13,15* paragraph [0034] *;
 [A]US2005258477  (SAITO TOMOHIRO [JP]) [A] 1,8,9,13,15 * the whole document *;
 [A]US2005272235  (WU CHII-MING [TW], et al) [A] 1,8,9,13,15 * paragraphs [0013] , [0022] *;
 [A]  - RAMOS A R ET AL, "Synthesis of cobalt silicide on porous silicon by high dose ion implantation", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER, AMSTERDAM, NL, (200105), vol. 178, no. 1-4, ISSN 0168-583X, pages 283 - 286, XP004242579 [A] 1-7 * the whole document *

DOI:   http://dx.doi.org/10.1016/S0168-583X(00)00481-X
 [A]  - RAMOS A R ET AL, "Ion beam synthesis of chromium silicide on porous silicon", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER, AMSTERDAM, NL, (200003), vol. 161-163, ISSN 0168-583X, pages 926 - 930, XP004192356 [A] 1-7 * the whole document *

DOI:   http://dx.doi.org/10.1016/S0168-583X(99)00812-5
 [A]  - LIFSHITZ NADIA, "Dependence of the Work-Function Difference Between the Polysilicon Gate and Silicon Substrate on the Doping Level in Polysilicon", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, (198503), vol. ED-32, no. 3, ISSN 0018-9383, pages 617 - 621, XP002411227 [A] 1,8,9,13,15 * the whole document *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.