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EP1956664
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EP About this file: EP1956664
| EP1956664 - NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 25.12.2009 Database last updated on 31.08.2024 | Most recent event Tooltip | 25.12.2009 | Withdrawal of application | published on 27.01.2010 [2010/04] | Applicant(s) | For all designated states ROHM CO., LTD. 21, Saiin Mizosaki-cho Ukyo-ku Kyoto-shi, Kyoto 615-8585 / JP | [2008/33] | Inventor(s) | 01 /
SONOBE, Masayuki c/o ROHM CO., LTD. 21, Saiin Mizosaki-cho Ukyo-ku Kyoto-shi, Kyoto 615-8585 / JP | 02 /
ITO, Norikazu c/o ROHM CO., LTD. 21, Saiin Mizosaki-cho Ukyo-ku Kyoto-shi, Kyoto 615-8585 / JP | 03 /
SAKAI, Mitsuhiko c/o ROHM CO., LTD. 21, Saiin Mizosaki-cho Ukyo-ku Kyoto-shi, Kyoto 615-8585 / JP | [2008/33] | Representative(s) | TBK Bavariaring 4-6 80336 München / DE | [N/P] |
| Former [2008/33] | TBK-Patent Bavariaring 4-6 80336 München / DE | Application number, filing date | 06833485.3 | 28.11.2006 | [2008/33] | WO2006JP323681 | Priority number, date | JP20050344168 | 29.11.2005 Original published format: JP 2005344168 | [2008/33] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2007063833 | Date: | 07.06.2007 | Language: | JA | [2007/23] | Type: | A1 Application with search report | No.: | EP1956664 | Date: | 13.08.2008 | Language: | EN | [2008/33] | Search report(s) | International search report - published on: | JP | 07.06.2007 | Classification | IPC: | H01L33/00, H01S5/183 | [2008/33] | CPC: |
H01S5/18358 (EP,US);
B82Y20/00 (EP,US);
H01L33/105 (EP,US);
H01S5/34333 (EP,US);
H01L33/32 (EP,US)
| Designated contracting states | DE, GB [2008/52] |
| Former [2008/33] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR | Extension states | AL | Not yet paid | BA | Not yet paid | HR | Not yet paid | MK | Not yet paid | RS | Not yet paid | Title | German: | NITRID-HALBLEITER-LEUCHTBAUELEMENT | [2008/33] | English: | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE | [2008/33] | French: | DISPOSITIF SEMI-CONDUCTEUR EMETTEUR DE LUMIERE AU NITRURE | [2008/33] | Entry into regional phase | 20.05.2008 | Translation filed | 20.05.2008 | National basic fee paid | 20.05.2008 | Search fee paid | 20.05.2008 | Designation fee(s) paid | 20.05.2008 | Examination fee paid | Examination procedure | 20.05.2008 | Examination requested [2008/33] | 01.07.2008 | Loss of particular rights, legal effect: designated state(s) | 08.08.2008 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, FR, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR | 17.12.2009 | Application withdrawn by applicant [2010/04] | Fees paid | Renewal fee | 28.11.2008 | Renewal fee patent year 03 |
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