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EP1840979
European procedure
Extract from the Register of European Patents
EP About this file: EP1840979
| EP1840979 - Process for forming a semiconductor layer [Right-click to bookmark this link] | |||
| Former [2007/40] | Semiconductor layer, process for forming the same, and semiconductor light emitting device | ||
| [2011/29] | Status | No opposition filed within time limit Status updated on 05.10.2012 Database last updated on 13.11.2024 | Most recent event Tooltip | 05.10.2012 | No opposition filed within time limit | published on 07.11.2012 [2012/45] | Applicant(s) | For all designated states Fujifilm Corporation 2-26-30 Nishiazabu Minato-ku Tokyo / JP | [2007/40] | Inventor(s) | 01 /
Asano, Hideki Fujifilm Corp. 577, Ushijima Kaisei-machi Ashigarakami-gun Kanagawa-ken / JP | [2011/48] |
| Former [2007/40] | 01 /
Asano, Hideki Fujifilm Corp. 577, Ushijima Kaisei-machi Ashigarakami-gun Kanagawa-ken / JP | Representative(s) | Klunker . Schmitt-Nilson . Hirsch Patentanwälte Destouchesstrasse 68 80796 München / DE | [N/P] |
| Former [2011/48] | Klunker . Schmitt-Nilson . Hirsch Patentanwälte Destouchesstrasse 68 80796 München / DE | ||
| Former [2007/40] | Klunker . Schmitt-Nilson . Hirsch Destouchesstrasse 68 80796 München / DE | Application number, filing date | 07006263.3 | 27.03.2007 | [2007/40] | Priority number, date | JP20060096879 | 31.03.2006 Original published format: JP 2006096879 | JP20070042239 | 22.02.2007 Original published format: JP 2007042239 | [2007/40] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1840979 | Date: | 03.10.2007 | Language: | EN | [2007/40] | Type: | A3 Search report | No.: | EP1840979 | Date: | 20.10.2010 | [2010/42] | Type: | B1 Patent specification | No.: | EP1840979 | Date: | 30.11.2011 | Language: | EN | [2011/48] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 17.09.2010 | Classification | IPC: | H01L21/205, C30B25/10, C30B29/40, // H01L27/15, H01L33/32, H01S5/343 | [2011/48] | CPC: |
H01L27/153 (EP,US);
C30B25/105 (EP,US);
C30B29/403 (EP,US);
H01L21/02403 (EP,US);
H01L21/02458 (EP,US);
H01L21/02505 (EP,US);
H01L21/0254 (EP,US);
H01L21/0262 (EP,US);
H01L24/32 (EP,US);
H01L33/007 (EP,US);
H01L2224/45144 (EP,US);
H01L2224/48091 (EP,US);
H01L2224/48227 (EP,US);
H01L2224/73265 (EP,US);
H01L2924/12041 (EP,US);
| C-Set: |
H01L2224/45144, H01L2924/00 (US,EP);
H01L2224/48091, H01L2924/00014 (EP,US);
H01L2924/12041, H01L2924/00 (US,EP);
H01L2924/12042, H01L2924/00 (US,EP) |
| Former IPC [2007/40] | H01L33/00, H01S5/343, H01L27/15, H01L21/205, C30B25/02, C30B29/40 | Designated contracting states | DE, FR, GB [2011/26] |
| Former [2007/40] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | Verfahren zur Herstellung einer Halbleiterschicht | [2011/29] | English: | Process for forming a semiconductor layer | [2011/29] | French: | Procédé de formation d'une couche semi-conductrice | [2011/29] |
| Former [2007/40] | Halbleiterschicht, Verfahren zu deren Herstellung und lichtemittierendes Halbleiterbauelement | ||
| Former [2007/40] | Semiconductor layer, process for forming the same, and semiconductor light emitting device | ||
| Former [2007/40] | Couche semi-conductrice, procédé de formation correspondant et dispositif semi-conducteur électroluminescent | Examination procedure | 19.04.2011 | Amendment by applicant (claims and/or description) | 19.04.2011 | Examination requested [2011/22] | 21.04.2011 | Loss of particular rights, legal effect: designated state(s) | 27.05.2011 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR | 07.07.2011 | Communication of intention to grant the patent | 12.10.2011 | Fee for grant paid | 12.10.2011 | Fee for publishing/printing paid | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 07.07.2011 | Opposition(s) | 31.08.2012 | No opposition filed within time limit [2012/45] | Fees paid | Renewal fee | 27.03.2009 | Renewal fee patent year 03 | 30.03.2010 | Renewal fee patent year 04 | 30.03.2011 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]EP0496030 (PIONEER ELECTRONIC CORP [JP]) [X] 1-4,8 * column 1, lines 3-56 * * column 2, line 45 - column 4, line 34; figures 1,2 * [A] 9-14; | [XY]JPH04213878 (NIPPON TELEGRAPH & TELEPHONE) [X] 1-4,8 * paragraphs [0007] , [0012] , [0016] - [0019]; figures 1,2,4-8 * [Y] 9-21; | [A]WO9723912 (PHILIPS ELECTRONICS NV [NL], et al) [A] 20,21 * page 2, lines 33,34 * * page 3, line 29 - page 5, line 19; figure 1 ** page 8, line 10 - page 9, line 34; figures 5-7 *; | [Y]US5959307 (NAKAMURA SHUJI [JP], et al) [Y] 9-13 * column 5, lines 20-24 * * column 6, lines 1-37; figures 2-5 *; | [X]US6080599 (YAMAMOTO MASAHIRO [JP], et al) [X] 1-4,8 * column 9, lines 44-62; figures 15A,B *; | [Y]US6163038 (CHEN CHIN-YUAN [TW], et al) [Y] 9-12,14-21 * column 4, line 11 - column 5, line 67; figures 6-9 *; | [X]JP2005303250 (MATSUSHITA ELECTRIC IND CO LTD) [X] 1-4,8 * paragraphs [0127] - [0133]; figure 11; table 5 *; | [XI] - YOSHIDA S ET AL, "GaInNP MQW structure LED grown by laser-assisted MOCVD", PHYSICA STATUS SOLIDI C WILEY-VCH GERMANY, (2003), no. 7, ISSN 1610-1634, pages 2236 - 2239, XP002599103 [X] 5,6 * abstract * * page 2237, paragraph Experimental - paragraph Results; figures 1,2 * [I] 7 DOI: http://dx.doi.org/10.1002/pssc.200303433 | [XI] - ZHOU B ET AL, "Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500 DEG C", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL LNKD- DOI:10.1016/0022-0248(95)00602-8, (19960301), vol. 160, no. 3, ISSN 0022-0248, pages 201 - 206, XP004006400 [X] 5,6 * abstract * * page 201, column 2, line 1 - page 202, column 1, line 27 * [I] 7 DOI: http://dx.doi.org/10.1016/0022-0248(95)00602-8 | [X] - KANGAWA Y ET AL, "Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS) JAPAN SOC. APPL. PHYS JAPAN, (20040801), vol. 43, no. 8A, ISSN 0021-4922, pages L1026 - L1028, XP002599104 [X] 5 * page L1026, column 2, lines 3-19; figure 1 * | by applicant | - YOSHIDA S. ET AL., "GatnNP MQW structure LED grown by laser-assisted MOCVD", PHYSICA STATUS SOLIDI C, (2003), vol. 0, no. 7, pages 2236 - 2239 |