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Extract from the Register of European Patents

EP About this file: EP1854760

EP1854760 - Semiconductor device and method of manufacturing the same [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  11.07.2014
Database last updated on 31.08.2024
Most recent event   Tooltip11.07.2014No opposition filed within time limitpublished on 13.08.2014  [2014/33]
Applicant(s)For all designated states
Olympus Corporation
43-2, Hatagaya 2-chome Shibuya-ku
Tokyo 151-0072 / JP
[2007/46]
Inventor(s)01 / Kojima, Kazuaki
c/o Olympus Corporation
43-2, Hatagaya 2-chome
Shibuya-ku
Tokyo 151-0072 / JP
 [2013/36]
Former [2007/46]01 / Kojima, Kazuaki
c/o Olympus Corporation 43-2, Hatagaya 2-chome Shibuya-ku
Tokyo 151-0072 / JP
Representative(s)Winter, Brandl - Partnerschaft mbB
Alois-Steinecker-Straße 22
85354 Freising / DE
[N/P]
Former [2013/36]Winter, Brandl, Fürniss, Hübner, Röss, Kaiser, Polte - Partnerschaft
Alois-Steinecker-Strasse 22
85354 Freising / DE
Former [2007/46]Winter, Brandl, Fürniss, Hübner Röss, Kaiser, Polte Partnerschaft Patent- und Rechtsanwaltskanzlei
Alois-Steinecker-Strasse 22
85354 Freising / DE
Application number, filing date07008876.002.05.2007
[2007/46]
Priority number, dateJP2006013306011.05.2006         Original published format: JP 2006133060
[2007/46]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1854760
Date:14.11.2007
Language:EN
[2007/46]
Type: A3 Search report 
No.:EP1854760
Date:27.05.2009
[2009/22]
Type: B1 Patent specification 
No.:EP1854760
Date:04.09.2013
Language:EN
[2013/36]
Search report(s)(Supplementary) European search report - dispatched on:EP23.04.2009
ClassificationIPC:B81B7/00
[2007/46]
CPC:
B81B7/007 (EP,US); H01L2224/02377 (EP); H01L2224/05001 (EP,US);
H01L2224/05022 (EP,US); H01L2224/05548 (EP,US); H01L2224/11 (EP,US);
H01L2924/00014 (EP,US) (-)
C-Set:
H01L2924/00014, H01L2224/05099 (US,EP);
H01L2924/00014, H01L2224/05599 (EP,US)
Designated contracting statesDE,   FR,   GB [2010/05]
Former [2007/46]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Halbleiterbauelement und Verfahren zu seiner Herstellung[2007/46]
English:Semiconductor device and method of manufacturing the same[2007/46]
French:Dispositif semi-conducteur et son procédé de fabrication[2007/46]
Examination procedure21.08.2009Examination requested  [2009/46]
18.09.2009Despatch of a communication from the examining division (Time limit: M04)
28.11.2009Loss of particular rights, legal effect: designated state(s)
07.01.2010Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR
18.01.2010Reply to a communication from the examining division
27.03.2013Communication of intention to grant the patent
24.07.2013Fee for grant paid
24.07.2013Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  18.09.2009
Opposition(s)05.06.2014No opposition filed within time limit [2014/33]
Fees paidRenewal fee
25.05.2009Renewal fee patent year 03
25.03.2010Renewal fee patent year 04
16.05.2011Renewal fee patent year 05
19.03.2012Renewal fee patent year 06
29.05.2013Renewal fee patent year 07
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Documents cited:Search[A]US4773972  (MIKKOR MATI [US]) [A] * column 3, line 32 - line 51 *;
 [X]WO2004035461  (UNIV MICHIGAN [US], et al) [X] 1-7,10,12,13 * page 7, line 14 * * page 7, line 18 - line 19 * * page 7, line 23 - line 24 * * page 8, line 7 - line 8 * * page 9, line 4 - line 20 * * figure 1 *
by applicantWO2004035461
 JP2005019966
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.