Extract from the Register of European Patents

EP About this file: EP2031633

EP2031633 - Charged particle device with a gas ion source with high mechanical stability [Right-click to bookmark this link]
Former [2009/10]Gas ion source with high mechanical stability
[2012/10]
StatusNo opposition filed within time limit
Status updated on  26.07.2013
Database last updated on 09.04.2026
Most recent event   Tooltip26.07.2013No opposition filed within time limitpublished on 28.08.2013  [2013/35]
Applicant(s)For all designated states
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
Ammerthalstrasse 20
85551 Heimstetten / DE
[2009/10]
Inventor(s)01 / Winkler, Dieter
Stademannstrasse 6
81737 München / DE
02 / Jasinski, Thomas
Rubenstrasse 22
81245 München / DE
 [2009/10]
Representative(s)Zimmermann, Gerd Heinrich, et al
Zimmermann & Partner Patentanwälte mbB
Postfach 330 920
80069 München / DE
[N/P]
Former [2009/10]Zimmermann, Gerd Heinrich, et al
Zimmermann & Partner Postfach 330 920
80069 München / DE
Application number, filing date07016766.327.08.2007
[2009/10]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2031633
Date:04.03.2009
Language:EN
[2009/10]
Type: B1 Patent specification 
No.:EP2031633
Date:19.09.2012
Language:EN
[2012/38]
Search report(s)(Supplementary) European search report - dispatched on:EP08.05.2008
ClassificationIPC:H01J37/28, H01J37/08, F25D19/00
[2012/10]
CPC:
F25D19/006 (EP,US); H01J27/26 (EP,US); H01J37/08 (EP,US);
H01J37/28 (EP,US); F25B2500/13 (EP,US); H01J2237/002 (EP,US);
H01J2237/0216 (EP,US); H01J2237/061 (EP,US); H01J2237/0807 (EP,US);
Y10T29/49826 (EP,US) (-)
Former IPC [2009/10]H01J37/08
Designated contracting statesDE,   NL [2009/46]
Former [2009/10]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Teilchenstrahlgerät mit einer Gas-Ionen-Quelle mit hoher mechanischer Stabilität[2012/10]
English:Charged particle device with a gas ion source with high mechanical stability[2012/10]
French:Dispositif à particules chargées comprenant une source ionique à gaz ayant une stabilité mécanique élévée[2012/10]
Former [2009/10]Gas-Ionen-Quelle mit hoher mechanischer Stabilität
Former [2009/10]Gas ion source with high mechanical stability
Former [2009/10]Stabilité mécanique élévée d'une source ionique à gaz
Examination procedure13.08.2009Amendment by applicant (claims and/or description)
13.08.2009Examination requested  [2009/39]
05.09.2009Loss of particular rights, legal effect: designated state(s)
13.10.2009Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, PL, PT, RO, SE, SI, SK, TR
08.10.2010Despatch of a communication from the examining division (Time limit: M04)
08.02.2011Reply to a communication from the examining division
19.10.2011Despatch of a communication from the examining division (Time limit: M04)
19.12.2011Reply to a communication from the examining division
29.02.2012Communication of intention to grant the patent
28.06.2012Fee for grant paid
28.06.2012Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  08.10.2010
Opposition(s)20.06.2013No opposition filed within time limit [2013/35]
Fees paidRenewal fee
07.08.2009Renewal fee patent year 03
06.08.2010Renewal fee patent year 04
08.08.2011Renewal fee patent year 05
08.08.2012Renewal fee patent year 06
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court
See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A] WO9828776  (PHILIPS ELECTRONICS NV et al.) [A] 5-7,9 * page 6, lines 22-25 *
 [XY]   WILBERTZ C ET AL: "RECENT PROGRESS IN GAS FIELD ION SOURCE TECHNOLOGY", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 2194, 1994, pages 407 - 417, XP008043021, ISSN: 0277-786X [X] 1-4,13-18 * figure 5 * [Y] 5-7,9

DOI:   http://dx.doi.org/10.1117/12.175829
 [X]   WILBERTZ C ET AL: "A FOCUSED GAS-ION BEAM SYSTEM FOR SUBMICRON APPLICATION", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER, AMSTERDAM, NL, vol. B63, no. 1/2, January 1992 (1992-01-01), pages 120 - 124, XP008043027, ISSN: 0168-583X [X] 1,4 * page 123, column 2, lines 30-35 *

DOI:   http://dx.doi.org/10.1016/0168-583X(92)95180-Y
 [Y]   EADES J A ET AL: "A helium-cooled specimen stage for electron microscopy", JOURNAL OF PHYSICS E. SCIENTIFIC INSTRUMENTS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 15, no. 2, 1 February 1982 (1982-02-01), pages 184 - 186, XP020016757, ISSN: 0022-3735 [Y] 5-7,9 * figure 1 *

DOI:   http://dx.doi.org/10.1088/0022-3735/15/2/010
 [A]   BOTT M ET AL: "DESIGN PRINCIPLES OF A VARIABLE TEMPERATURE SCANNING TUNNELING MICROSCOPE", REVIEW OF SCIENTIFIC INSTRUMENTS, AIP, MELVILLE, NY, US, vol. 66, no. 8, 1 August 1995 (1995-08-01), pages 4135 - 4139, XP000525607, ISSN: 0034-6748 [A] 5-7,9 * page 4135, column 2, lines 32-40 *

DOI:   http://dx.doi.org/10.1063/1.1145360
 [A]   HARIDAS M M ET AL: "Cryogenic-Scanning Electron Microscopy as a Technique to Image Sol-to-Gel Transformation in Chelated Alkoxide Systems", CERAMICS INTERNATIONAL, ELSEVIER, AMSTERDAM, NL, vol. 22, no. 2, 1996, pages 155 - 159, XP004040532, ISSN: 0272-8842 [A] 5-7,9 * page 157, column 1, lines 40-49 *

DOI:   http://dx.doi.org/10.1016/0272-8842(95)00073-9
 [A]   HANSON G R ET AL: "H2 and rare gas field ion source with high angular current", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, NEW YORK, NY, US, vol. 16, no. 6, November 1979 (1979-11-01), pages 1875 - 1878, XP007903682, ISSN: 0022-5355 [A] * figure 1 *

DOI:   http://dx.doi.org/10.1116/1.570317
 [X]   ORLOFF J ET AL: "Angular intensity of a gas-phase field ionization source", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 50, no. 9, September 1979 (1979-09-01), pages 6026 - 6027, XP007903677, ISSN: 0021-8979 [X] 11,13,14 * figure 1 *

DOI:   http://dx.doi.org/10.1063/1.326679
ExaminationDE4133121
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.