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Extract from the Register of European Patents

EP About this file: EP1918999

EP1918999 - Method for producing single crystal silicon solar cell and single crystal silicon solar cell [Right-click to bookmark this link]
Former [2008/19]Method for producing thin film mono-crystalline silicon solar cell and corresponding solar cell
[2016/46]
StatusNo opposition filed within time limit
Status updated on  23.02.2018
Database last updated on 07.10.2024
FormerThe patent has been granted
Status updated on  17.03.2017
FormerGrant of patent is intended
Status updated on  10.03.2017
FormerExamination is in progress
Status updated on  06.03.2017
FormerGrant of patent is intended
Status updated on  24.02.2017
Most recent event   Tooltip24.08.2018Lapse of the patent in a contracting statepublished on 26.09.2018  [2018/39]
Applicant(s)For all designated states
Shin-Etsu Chemical Co., Ltd.
6-1, Ohtemachi 2-chome Chiyoda-ku
Tokyo 100-0004 / JP
[2008/19]
Inventor(s)01 / Ito, Atsuo
c/o Advanced Functional Materials
Research Center
Shin-Etsu Chemical Co., Ltd.
2-13-1 Isobe
Annaka-shi Gunma-ken / JP
02 / Akiyama, Shoji
c/o Advanced Functional Materials
Research Center
Shin-Etsu Chemical Co., Ltd.
2-13-1 Isobe
Annaka-shi Gunma-ken / JP
03 / Kawai, Makoto
c/o Advanced Functional Materials
Research Center
Shin-Etsu Chemical Co., Ltd.
2-13-1 Isobe
Annaka-shi Gunma-ken / JP
04 / Tanaka, Koichi
c/o Advanced Functional Materials
Research Center
Shin-Etsu Chemical Co., Ltd.
2-13-1 Isobe
Annaka-shi Gunma-ken / JP
05 / Tobisaka, Yuuji
c/o Advanced Functional Materials
Research Center
Shin-Etsu Chemical Co., Ltd.
2-13-1 Isobe
Annaka-shi Gunma-ken / JP
06 / Kubota, Yoshihiro
c/o Advanced Functional Materials
Research Center
Shin-Etsu Chemical Co., Ltd.
2-13-1 Isobe
Annaka-shi Gunma-ken / JP
 [2017/16]
Former [2008/19]01 / Ito, Atsuo
c/o Advanced Functional Materials Research Center Shin-Etsu Chemical Co., Ltd. 2-13-1 Isobe
Annaka-shi Gunma-ken / JP
02 / Akiyama, Shoji
c/o Advanced Functional Materials Research Center Shin-Etsu Chemical Co., Ltd. 2-13-1 Isobe
Annaka-shi Gunma-ken / JP
03 / Kawai, Makoto
c/o Advanced Functional Materials Research Center Shin-Etsu Chemical Co., Ltd. 2-13-1 Isobe
Annaka-shi Gunma-ken / JP
04 / Tanaka, Koichi
c/o Advanced Functional Materials Research Center Shin-Etsu Chemical Co., Ltd. 2-13-1 Isobe
Annaka-shi Gunma-ken / JP
05 / Tobisaka, Yuuji
c/o Advanced Functional Materials Research Center Shin-Etsu Chemical Co., Ltd. 2-13-1 Isobe
Annaka-shi Gunma-ken / JP
06 / Kubota, Yoshihiro
c/o Advanced Functional Materials Research Center Shin-Etsu Chemical Co., Ltd. 2-13-1 Isobe
Annaka-shi Gunma-ken / JP
Representative(s)Wibbelmann, Jobst
Wuesthoff & Wuesthoff
Patentanwälte und Rechtsanwalt PartG mbB
Schweigerstrasse 2
81541 München / DE
[N/P]
Former [2017/16]Wibbelmann, Jobst
Wuesthoff & Wuesthoff
Patentanwälte PartG mbB
Schweigerstrasse 2
81541 München / DE
Former [2008/19]Wibbelmann, Jobst
Wuesthoff & Wuesthoff Patent- und Rechtsanwälte Schweigerstrasse 2
81541 München / DE
Application number, filing date07020915.025.10.2007
[2008/19]
Priority number, dateJP2006029460530.10.2006         Original published format: JP 2006294605
[2008/19]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1918999
Date:07.05.2008
Language:EN
[2008/19]
Type: B1 Patent specification 
No.:EP1918999
Date:19.04.2017
Language:EN
[2017/16]
Search report(s)(Supplementary) European search report - dispatched on:EP22.02.2008
ClassificationIPC:H01L31/18
[2008/19]
CPC:
H01L31/1804 (EP,US); H01L31/04 (KR); H01L31/06 (KR);
H01L31/18 (KR); H01L31/1896 (EP,US); Y02B10/10 (EP,US);
Y02E10/547 (EP,US); Y02P70/50 (EP,US) (-)
Designated contracting statesBE,   DE,   FR [2017/16]
Former [2009/03]BE,  DE,  FR 
Former [2008/19]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Verfahren zur Herstellung einer einkristallinen Silizium Solarzelle und einkristalline Silizium Solarzelle[2017/15]
English:Method for producing single crystal silicon solar cell and single crystal silicon solar cell[2017/15]
French:Procédé de production d'une cellule solaire en silicium monocrystallin et cellule solaire en silicium monocrystallin[2017/15]
Former [2008/19]Verfahren zur Herstellung einer einkristallinen Silizium-Dünnschicht in einer Solarzelle sowie entsprechende Solarzelle
Former [2008/19]Method for producing thin film mono-crystalline silicon solar cell and corresponding solar cell
Former [2008/19]Procédé de production d'une cellule solaire à couche mince en silicium monocrystallin et cellule solaire correspondante
Examination procedure07.11.2008Examination requested  [2008/51]
08.11.2008Loss of particular rights, legal effect: designated state(s)
23.11.2008Despatch of communication of loss of particular rights: designated state(s) AT, BG, CH, CY, CZ, DK, EE, ES, FI, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR
22.04.2009Despatch of a communication from the examining division (Time limit: M04)
21.08.2009Reply to a communication from the examining division
17.04.2012Despatch of a communication from the examining division (Time limit: M04)
14.08.2012Reply to a communication from the examining division
27.10.2016Communication of intention to grant the patent
17.02.2017Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
17.02.2017Fee for grant paid
17.02.2017Fee for publishing/printing paid
09.03.2017Information about intention to grant a patent
09.03.2017Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  22.04.2009
Opposition(s)22.01.2018No opposition filed within time limit [2018/13]
Fees paidRenewal fee
13.10.2009Renewal fee patent year 03
12.10.2010Renewal fee patent year 04
11.10.2011Renewal fee patent year 05
11.10.2012Renewal fee patent year 06
14.10.2013Renewal fee patent year 07
14.10.2014Renewal fee patent year 08
12.10.2015Renewal fee patent year 09
11.10.2016Renewal fee patent year 10
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Lapses during opposition  TooltipBE31.10.2017
[2018/39]
Documents cited:Search[A]WO9852216  (SILICON GENESIS CORP [US], et al) [A] 1 * abstract * * page 1, line 24 *;
 [Y]DE19936941  (BOSCH GMBH ROBERT [DE]) [Y] 1-8 * abstract * * columns 3,5,6 * * column 4, lines 53-61 *;
 [A]WO0175976  (HAHN MEITNER INST BERLIN GMBH [DE], et al) [A] 1,4,5,7,8 * abstract * * page 11, lines 10-12 * * page 12, lines 5-12 * * page 17 * * page 20 *;
 [A]JP2003017723  (SHINETSU HANDOTAI KK) [A] 1,6,7 * abstract *;
 [A]WO03058725  (REVEO INC [US], et al) [A] 1-6 * abstract * * page 20 *;
 [A]US2004009649  (KUB FRANCIS J [US], et al) [A] 2 * paragraph [0081] *;
 [A]GB2405030  (UNIV LOUGHBOROUGH [GB], et al) [A] 7 * abstract *;
 [PX]WO2007109568  (SILICON GENESIS CORP [US], et al) [PX] 1-7 * abstract ** paragraphs [0089] , [0095] , [0096] *;
 [Y]  - SHAH A V ET AL, "Thin-film silicon solar cell technology", PROGRESS IN PHOTOVOLTAICS. RESEARCH AND APPLICATIONS, JOHN WILEY AND SONS, CHICHESTER, GB, (2004), vol. 12, no. 2-3, ISSN 1062-7995, pages 113 - 142, XP002352085 [Y] 1-8 * abstract * * paragraph [04.1] * * page 135, line 1 *

DOI:   http://dx.doi.org/10.1002/pip.533
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