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EP2099072
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EP About this file: EP2099072
| EP2099072 - RESISTANCE CHANGE ELEMENT AND METHOD FOR MANUFACTURING THE SAME [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 09.01.2015 Database last updated on 06.07.2024 | Most recent event Tooltip | 09.01.2015 | Application deemed to be withdrawn | published on 11.02.2015 [2015/07] | Applicant(s) | For all designated states Fujitsu Limited 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 / JP | [2009/37] | Inventor(s) | 01 /
NOSHIRO, Hideyuki FUJITSU LIMITED 1-1 Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | [2009/37] | Representative(s) | Fenlon, Christine Lesley, et al Haseltine Lake LLP Lincoln House, 5th Floor 300 High Holborn London WC1V 7JH / GB | [2013/52] |
| Former [2013/21] | Tsang, Olivia, et al Haseltine Lake LLP Lincoln House, 5th Floor 300 High Holborn London WC1V 7JH / GB | ||
| Former [2009/37] | Holtby, Christopher Lawrence Haseltine Lake LLP Lincoln House, 5th Floor 300 High Holborn London WC1V 7JH / GB | Application number, filing date | 07743885.1 | 22.05.2007 | [2009/37] | WO2007JP60451 | Priority number, date | WO2006JP325295 | 19.12.2006 Original published format: PCT/JP2006/325295 | [2009/37] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2008075471 | Date: | 26.06.2008 | Language: | JA | [2008/26] | Type: | A1 Application with search report | No.: | EP2099072 | Date: | 09.09.2009 | Language: | EN | [2009/37] | Search report(s) | International search report - published on: | JP | 26.06.2008 | (Supplementary) European search report - dispatched on: | EP | 05.07.2012 | Classification | IPC: | H01L45/00 | [2014/15] | CPC: |
H01L27/101 (EP,US);
H01L27/10 (KR);
H01L27/105 (KR);
H10B63/30 (EP,US);
H10N70/026 (EP,US);
H10N70/028 (EP,US);
|
| Former IPC [2009/37] | H01L27/10 | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR [2009/37] | Title | German: | WIDERSTANDSÄNDERUNGSELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG | [2009/37] | English: | RESISTANCE CHANGE ELEMENT AND METHOD FOR MANUFACTURING THE SAME | [2009/37] | French: | ÉLÉMENT À CHANGEMENT DE RÉSISTANCE ET SON PROCÉDÉ DE FABRICATION | [2009/37] | Entry into regional phase | 19.06.2009 | Translation filed | 15.07.2009 | National basic fee paid | 15.07.2009 | Search fee paid | 15.07.2009 | Designation fee(s) paid | 15.07.2009 | Examination fee paid | Examination procedure | 15.07.2009 | Examination requested [2009/37] | 01.02.2013 | Amendment by applicant (claims and/or description) | 05.09.2013 | Despatch of a communication from the examining division (Time limit: M04) | 06.01.2014 | Reply to a communication from the examining division | 10.04.2014 | Communication of intention to grant the patent | 21.08.2014 | Application deemed to be withdrawn, date of legal effect [2015/07] | 24.09.2014 | Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time [2015/07] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 05.09.2013 | Fees paid | Renewal fee | 15.07.2009 | Renewal fee patent year 03 | 28.05.2010 | Renewal fee patent year 04 | 31.05.2011 | Renewal fee patent year 05 | 09.03.2012 | Renewal fee patent year 06 | 05.03.2013 | Renewal fee patent year 07 | 03.03.2014 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [I]KR100647333B (SAMSUNG ELECTRONICS CO LTD [KR]) [I] 1,2 * the whole document *; | US2007045692 [ ] (KIM DONG-CHUL [KR], et al) [ ] * paragraph [0051] * | International search | [A]JP2004363604 (SAMSUNG ELECTRONICS CO LTD); | [X]JP2005203389 (SHARP KK, et al); | [A]JP2006140489 (SAMSUNG ELECTRONICS CO LTD); | [X]WO2006115208 (MATSUSHITA ELECTRIC IND CO LTD [JP], et al); | [A]JP2006324447 (SHARP KK); | [A] - KINOSHITA K. ET AL., "Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide", APPLIED PHYSICS LETTERS, (2006), vol. 89, pages 103509-1 - 103509-3, XP012085619 DOI: http://dx.doi.org/10.1063/1.2339032 | [A] - SEO S. ET AL., "Reproducible resistance switching in polycrystalline NiO films", APPLIED PHYSICS LETTERS, (20041206), vol. 85, no. 23, pages 5655 - 5657, XP012063730 DOI: http://dx.doi.org/10.1063/1.1831560 | [AP] - LEE M.D. ET AL., "Effect of Oxygen Concentration on Characteristics of NiOx-Based Resistance Random Access Memory", IEEE TRANSACTIONS ON MAGNETICS, (200702), vol. 43, no. 2, pages 939 - 942, XP011157760 | by applicant | JP2000091539 | JP2000133633 | JP2003229540 | JP2003273333 | JP2004146551 | JP2004296735 | JP2005175457 | JP2006140489 | KR100647333B | - K. KINOSHITA ET AL., "Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide", APPLIED PHYSICS LETTER, vol. 89, doi:doi:10.1063/1.2339032, page 103509, XP012085619 DOI: http://dx.doi.org/10.1063/1.2339032 | - S. SEO ET AL., "Reproducible resistance switching in polycrystalline NiO films", APPLIED PHYSICS LETTER, (20041206), vol. 85, no. 23, doi:doi:10.1063/1.1831560, XP012063730 DOI: http://dx.doi.org/10.1063/1.1831560 |