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Extract from the Register of European Patents

EP About this file: EP2088626

EP2088626 - PROCESS FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  08.07.2016
Database last updated on 06.11.2024
Most recent event   Tooltip08.07.2016Application deemed to be withdrawnpublished on 10.08.2016  [2016/32]
Applicant(s)For all designated states
Sumitomo Electric Industries, Ltd.
5-33 Kitahama 4-chome Chuo-ku Osaka-shi
Osaka 541-0041 / JP
[2009/33]
Inventor(s)01 / FUJIKAWA, Kazuhiro
Osaka Works of SUMITOMO ELECTRIC INDUSTRIES, LTD. 1-3, Shimaya 1-chome Konohana-ku
Osaka-shi Osaka 554-0024 / JP
 [2009/33]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [2009/33]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date07792461.113.08.2007
[2009/33]
WO2007JP65818
Priority number, dateJP2006032209529.11.2006         Original published format: JP 2006322095
[2009/33]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2008065782
Date:05.06.2008
Language:JA
[2008/23]
Type: A1 Application with search report 
No.:EP2088626
Date:12.08.2009
Language:EN
[2009/33]
Search report(s)International search report - published on:JP05.06.2008
(Supplementary) European search report - dispatched on:EP28.10.2010
ClassificationIPC:H01L21/04, H01L29/78, // H01L29/24, H01L29/423
[2010/48]
CPC:
H01L29/7813 (EP,US); H01L21/02 (KR); H01L21/18 (KR);
H01L21/324 (KR); H01L29/66 (KR); H01L29/66068 (EP,US);
H01L29/045 (EP,US); H01L29/1608 (EP,US); H01L29/4236 (EP,US);
H01L29/4238 (EP,US) (-)
Former IPC [2009/33]H01L29/12, H01L21/336, H01L29/78
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MT,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2009/33]
TitleGerman:PROZESS ZUM HERSTELLEN EINER SILIZIUMCARBID-HALBLEITERANORDNUNG[2009/33]
English:PROCESS FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE[2009/33]
French:PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR AU CARBURE DE SILICIUM[2009/33]
Entry into regional phase15.04.2009Translation filed 
15.04.2009National basic fee paid 
15.04.2009Search fee paid 
15.04.2009Designation fee(s) paid 
15.04.2009Examination fee paid 
Examination procedure15.04.2009Examination requested  [2009/33]
06.06.2011Amendment by applicant (claims and/or description)
14.02.2012Despatch of a communication from the examining division (Time limit: M04)
01.06.2012Reply to a communication from the examining division
01.03.2016Application deemed to be withdrawn, date of legal effect  [2016/32]
04.04.2016Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2016/32]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  14.02.2012
Fees paidRenewal fee
28.08.2009Renewal fee patent year 03
27.08.2010Renewal fee patent year 04
30.08.2011Renewal fee patent year 05
30.08.2012Renewal fee patent year 06
28.08.2013Renewal fee patent year 07
27.08.2014Renewal fee patent year 08
Penalty fee
Additional fee for renewal fee
31.08.201509   M06   Not yet paid
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Documents cited:Search[XI]US2005064639  (HISADA YOSHIYUKI [JP], et al) [X] 1 * figures 11-14, 50 and associated text * [I] 2,3;
 [I]US2005230686  (KOJIMA JUN [JP], et al) [I] 1-3 * figures 13A, 14, 22 and associated text *;
 [A]US6057558  (YAMAMOTO TSUYOSHI [JP], et al) [A] 1-3 * figures 15, 16 *
International search[A]JPH09199724  (DENSO CORP, et al);
 [A]JP2003224277  (DENSO CORP)
by applicantJPH09199724
 JPH10247732
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.