-
EP2064731
European procedure
Extract from the Register of European Patents
EP About this file: EP2064731
| EP2064731 - METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES [Right-click to bookmark this link] | |||
| Former [2009/23] | SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF | ||
| [2009/35] | Status | No opposition filed within time limit Status updated on 11.02.2011 Database last updated on 26.03.2026 | Most recent event Tooltip | 11.02.2011 | No opposition filed within time limit | published on 16.03.2011 [2011/11] | Applicant(s) | For all designated states TOYOTA JIDOSHA KABUSHIKI KAISHA 1 Toyota-cho Toyota-shi, Aichi 471-8571 / JP | [N/P] |
| Former [2010/26] | For all designated states Toyota Jidosha Kabushiki Kaisha 1, Toyota-cho Toyota-shi, Aichi 471-8571 / JP | ||
| Former [2009/23] | For all designated states Toyota Jidosha Kabushiki Kaisha 1, Toyota-cho Toyota-shi, Aichi 471-8571 / JP | ||
| For all designated states Osaka University 1-1, Yamadaoka Suita-shi Osaka 565-0871 / JP | Inventor(s) | 01 /
KAWAHASHI, Akira c/o TOYOTA JIDOSHA KABUSHIKI KAISHA, 1, Toyota-cho Toyota-shi, Aichi 471-8571 / JP | 02 /
SUGIMOTO, Masahiro c/o TOYOTA JIDOSHA KABUSHIKI KAISHA, 1, Toyota-cho Toyota-shi, Aichi 471-8571 / JP | 03 /
SEKI, Akinori c/o TOYOTA JIDOSHA KABUSHIKI KAISHA, 1, Toyota-cho Toyota-shi, Aichi 471-8571 / JP | 04 /
MAEDA, Masakatsu c/o OSAKA UNIVERSITY, 1-1, Yamadaoka Suita-shi, Osaka 565-0871 / JP | 05 /
TAKAHASHI, Yasuo c/o OSAKA UNIVERSITY, 1-1, Yamadaoka Suita-shi, Osaka 565-0871 / JP | [2009/23] | Representative(s) | Winter, Brandl - Partnerschaft mbB Alois-Steinecker-Straße 22 85354 Freising / DE | [N/P] |
| Former [2009/23] | Winter, Brandl, Fürniss, Hübner Röss, Kaiser, Polte Partnerschaft Patent- und Rechtsanwaltskanzlei Alois-Steinecker-Strasse 22 85354 Freising / DE | Application number, filing date | 07828876.8 | 21.09.2007 | [2009/23] | WO2007JP69135 | Priority number, date | JP20060256705 | 22.09.2006 Original published format: JP 2006256705 | JP20060256706 | 22.09.2006 Original published format: JP 2006256706 | [2009/23] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2008035822 | Date: | 27.03.2008 | Language: | EN | [2008/13] | Type: | A1 Application with search report | No.: | EP2064731 | Date: | 03.06.2009 | Language: | EN | The application published by WIPO in one of the EPO official languages on 27.03.2008 takes the place of the publication of the European patent application. | [2009/23] | Type: | B1 Patent specification | No.: | EP2064731 | Date: | 07.04.2010 | Language: | EN | [2010/14] | Search report(s) | International search report - published on: | EP | 27.03.2008 | Classification | IPC: | H01L21/28, H01L29/45, H01L29/78, H01L29/24 | [2009/23] | CPC: |
H10D30/66 (EP,US);
H10D30/60 (EP,US);
H10D64/62 (EP,US);
H10P30/2042 (EP,US);
H10P30/21 (EP,US);
H10D62/8325 (EP,US);
Y10S438/931 (EP)
(-)
| Designated contracting states | DE, FR [2010/12] |
| Former [2010/09] | BE, DE, FR | ||
| Former [2009/30] | DE, FR | ||
| Former [2009/23] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | HERSTELLUNGSVERFAHREN FÜR HALBLEITERBAUELEMENTE | [2009/35] | English: | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES | [2009/35] | French: | PROCÉDÉ DE FABRICATION DE DISPOSITIFS À SEMI-CONDUCTEUR | [2009/35] |
| Former [2009/23] | HALBLEITERBAUELEMENTE UND HERSTELLUNGSVERFAHREN DAFÜR | ||
| Former [2009/23] | SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF | ||
| Former [2009/23] | DISPOSITIFS À SEMI-CONDUCTEUR ET LEUR PROCÉDÉ DE FABRICATION | Entry into regional phase | 12.03.2009 | National basic fee paid | 12.03.2009 | Designation fee(s) paid | 12.03.2009 | Examination fee paid | Examination procedure | 12.03.2009 | Amendment by applicant (claims and/or description) | 12.03.2009 | Examination requested [2009/23] | 30.09.2009 | Communication of intention to grant the patent | 09.02.2010 | Fee for grant paid | 09.02.2010 | Fee for publishing/printing paid | Opposition(s) | 10.01.2011 | No opposition filed within time limit [2011/11] | Fees paid | Renewal fee | 21.09.2009 | Renewal fee patent year 03 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A] JOHNSON BRIAN J ET AL: "Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 95, no. 10, 15 May 2004 (2004-05-15), pages 5616 - 5620, XP012066622, ISSN: 0021-8979 [A] 1,5,6,9 * figure 1c * DOI: http://dx.doi.org/10.1063/1.1707215 | [X] GUO HUI ET AL: "Ti-Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation", CHINESE PHYSICS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, US, vol. 15, no. 9, 1 September 2006 (2006-09-01), pages 2142 - 2145, XP020106356, ISSN: 1009-1963 [X] 10-12 * page 2144, column R * DOI: http://dx.doi.org/10.1088/1009-1963/15/9/039 | [X] PECZ B ET AL: "Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC", APPL SURF SCI; APPLIED SURFACE SCIENCE FEB 15 2003, vol. 206, no. 1-4, 15 February 2003 (2003-02-15), pages 8 - 11, XP002462221 [X] 10-12 * figure 2 * DOI: http://dx.doi.org/10.1016/S0169-4332(02)01195-9 | [X] TSUKIMOTO S ET AL: "Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC", J ELECTRON MATER; JOURNAL OF ELECTRONIC MATERIALS MAY 2004, vol. 33, no. 5, May 2004 (2004-05-01), pages 460 - 466, XP008086767 [X] 10-12 * page 563, column R * DOI: http://dx.doi.org/10.1007/s11664-004-0203-x | [PX] GAO M ET AL: "Role of interface layers and localized states in TiAl-based Ohmic contacts to p-type 4H-SiC", J ELECTRON MATER; JOURNAL OF ELECTRONIC MATERIALS APRIL 2007, vol. 36, no. 4, April 2007 (2007-04-01), pages 277 - 284, XP002462222 [PX] 10-12 * figure 1 * DOI: http://dx.doi.org/10.1007/s11664-006-0078-0 |