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EP2083448
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EP About this file: EP2083448
| EP2083448 - SILICON CARBIDE SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 10.10.2014 Database last updated on 12.07.2024 | Most recent event Tooltip | 10.10.2014 | Application deemed to be withdrawn | published on 12.11.2014 [2014/46] | Applicant(s) | For all designated states Sumitomo Electric Industries, Ltd. 5-33 Kitahama 4-chome Chuo-ku Osaka-shi Osaka 540-0041 / JP | [2009/31] | Inventor(s) | 01 /
HARADA, Shin Osaka Works of SUMITOMO ELECTRIC INDUSTRIES, LTD. 1-3, Shimaya 1-chome Konohana-ku Osaka-shi Osaka 554-0024 / JP | 02 /
MASUDA, Takeyoshi Osaka Works of SUMITOMO ELECTRIC INDUSTRIES, LTD. 1-3, Shimaya 1-chome Konohana-ku Osaka-shi Osaka 554-0024 / JP | [2009/31] | Representative(s) | Grünecker Patent- und Rechtsanwälte PartG mbB Leopoldstrasse 4 80802 München / DE | [N/P] |
| Former [2009/31] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät Leopoldstrasse 4 80802 München / DE | Application number, filing date | 07831361.6 | 07.11.2007 | [2009/31] | WO2007JP71630 | Priority number, date | JP20060305476 | 10.11.2006 Original published format: JP 2006305476 | [2009/31] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2008056698 | Date: | 15.05.2008 | Language: | JA | [2008/20] | Type: | A1 Application with search report | No.: | EP2083448 | Date: | 29.07.2009 | Language: | EN | [2009/31] | Search report(s) | International search report - published on: | JP | 15.05.2008 | (Supplementary) European search report - dispatched on: | EP | 18.10.2010 | Classification | IPC: | H01L21/04, H01L29/78, H01L29/04, H01L21/02, // H01L29/24 | [2010/46] | CPC: |
H01L29/7802 (EP,KR,US);
H01L21/02378 (EP,KR,US);
H01L21/02293 (KR);
H01L21/0243 (EP,KR,US);
H01L21/02433 (EP,KR,US);
H01L21/02529 (EP,KR,US);
H01L21/02639 (EP,KR,US);
H01L21/0445 (EP,KR,US);
H01L21/049 (EP,KR,US);
H01L29/045 (EP,KR,US);
H01L29/1608 (EP,KR,US);
H01L29/66068 (EP,US);
H01L29/0878 (EP,US)
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| Former IPC [2009/31] | H01L29/12, H01L21/20, H01L21/28, H01L21/336, H01L29/78 | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR [2009/31] | Title | German: | SILIZIUMCARBIDHALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN DAFÜR | [2009/31] | English: | SILICON CARBIDE SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME | [2009/31] | French: | DISPOSITIF SEMI-CONDUCTEUR DE CARBURE DE SILICIUM ET PROCÉDÉ DE FABRICATION DE CELUI-CI | [2009/31] | Entry into regional phase | 17.04.2009 | Translation filed | 17.04.2009 | National basic fee paid | 17.04.2009 | Search fee paid | 17.04.2009 | Designation fee(s) paid | 17.04.2009 | Examination fee paid | Examination procedure | 17.04.2009 | Examination requested [2009/31] | 16.05.2011 | Amendment by applicant (claims and/or description) | 06.02.2012 | Despatch of a communication from the examining division (Time limit: M04) | 01.06.2012 | Reply to a communication from the examining division | 03.06.2014 | Application deemed to be withdrawn, date of legal effect [2014/46] | 02.07.2014 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2014/46] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 06.02.2012 | Fees paid | Renewal fee | 27.11.2009 | Renewal fee patent year 03 | 30.11.2010 | Renewal fee patent year 04 | 29.11.2011 | Renewal fee patent year 05 | 28.11.2012 | Renewal fee patent year 06 | Penalty fee | Additional fee for renewal fee | 30.11.2013 | 07 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI]US2005230686 (KOJIMA JUN [JP], et al) [X] 1,2,5-8 * figures 11, 13-17, 22 and associated text *[I] 3,4 | International search | [A]JPH09102459 (MATSUSHITA ELECTRIC IND CO LTD); | [A]JPH11162850 (MATSUSHITA ELECTRIC IND CO LTD); | [A]JP2003234301 (MATSUSHITA ELECTRIC IND CO LTD); | [Y]JP2004152813 (TOYOTA MOTOR CORP, et al); | [A]JP2005097040 (NEW IND RES ORGANIZATION); | [A]JP2005277229 (NAT INST OF ADV IND & TECHNOL); | [X]JP2006013005 (DENSO CORP); | [AP]JP2006344942 (SUMITOMO ELECTRIC INDUSTRIES); | [Y] - STARKE U. ET AL., "SiC SURFACE RECONSTRUCTION: RELEVANCY OF ATOMIC STRUCTURE FOR GROWTH TECHNOLOGY", SURFACE REVIEW AND LETTERS, (1999), vol. 6, no. 6, pages 1129 - 1141, XP003019155 DOI: http://dx.doi.org/10.1142/S0218625X99001256 | by applicant | JP2000294777 |