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Extract from the Register of European Patents

EP About this file: EP2238274

EP2238274 - METHOD FOR MANUFACTURING NANOWIRE BY USING STRESS-INDUCED GROWTH [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  15.11.2013
Database last updated on 02.11.2024
Most recent event   Tooltip15.11.2013Application deemed to be withdrawnpublished on 18.12.2013  [2013/51]
Applicant(s)For all designated states
Industry-Academic Cooperation Foundation, Yonsei University
Yonsei University 134, Shinchon-dong Seodaemun-gu
Seoul 120-749 / KR
[2010/41]
Inventor(s)01 / LEE, WOO YOUNG
108-1905 Daerim Apt. Seongsan-dong Mapo-gu
Seoul 121-250 / KR
02 / HAM, JIN HEE
301 Mokdong Mansions 231-59 Mok-dong Yangcheon-gu
Seoul 158-050 / KR
03 / SHIM, WOO YOUNG
16-101 Misung Apt. Wolgye 3-dong Nowon-gu
Seoul 139-915 / KR
04 / ROH, JONG WOOK
Room 327-1 Engineering Building II Yonsei University 134 Sinchon-dong Seodaemun-gu
Seoul 120-749 / KR
05 / LEE, SEUNG HYUN
Room 327-1 Engineering Building II Yonsei University 134 Sinchon-dong Seodaemun-gu
Seoul 120-749 / KR
06 / JEON, KYE JIN
101-1302 Samsung Apt. Youljeon-dong Jangan-gu Suwon
Gyeonggi-do 440-705 / KR
 [2010/41]
Representative(s)Plasseraud IP
104 Rue de Richelieu
CS92104
75080 Paris Cedex 02 / FR
[N/P]
Former [2010/41]Cabinet Plasseraud
52, rue de la Victoire
75440 Paris Cedex 09 / FR
Application number, filing date07855359.128.12.2007
[2010/41]
WO2007KR06944
Priority number, dateKR2006013706928.12.2006         Original published format: KR 20060137069
KR2007005123628.05.2007         Original published format: KR 20070051236
[2010/41]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2008082186
Date:10.07.2008
Language:EN
[2008/28]
Type: A1 Application with search report 
No.:EP2238274
Date:13.10.2010
Language:EN
The application published by WIPO in one of the EPO official languages on 10.07.2008 takes the place of the publication of the European patent application.
[2010/41]
Search report(s)International search report - published on:KR10.07.2008
(Supplementary) European search report - dispatched on:EP23.09.2011
ClassificationIPC:C23C14/34, C30B1/12, C30B29/02, C30B29/60
[2011/43]
CPC:
C23C14/14 (EP,US); B82Y30/00 (EP,US); B82Y40/00 (EP,US);
C30B1/12 (EP,US); C30B29/02 (EP,US); C30B29/60 (EP,US)
Former IPC [2010/41]C23C14/34
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MT,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2010/41]
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINES NANODRAHTS DURCH ANWENDUNG BELASTUNGSINDIZIERTEN WACHSTUMS[2010/41]
English:METHOD FOR MANUFACTURING NANOWIRE BY USING STRESS-INDUCED GROWTH[2010/41]
French:PROCÉDÉ PERMETTANT LA PRODUCTION D'UN FIL NANOMÉTRIQUE AU MOYEN D'UNE CROISSANCE SOUS CONTRAINTE[2010/41]
Entry into regional phase26.02.2008National basic fee paid 
26.02.2008Search fee paid 
26.02.2008Designation fee(s) paid 
26.02.2008Examination fee paid 
Examination procedure26.02.2008Examination requested  [2010/41]
30.03.2012Amendment by applicant (claims and/or description)
19.02.2013Despatch of a communication from the examining division (Time limit: M04)
02.07.2013Application deemed to be withdrawn, date of legal effect  [2013/51]
09.08.2013Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2013/51]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  19.02.2013
Fees paidRenewal fee
30.12.2009Renewal fee patent year 03
29.11.2010Renewal fee patent year 04
13.12.2011Renewal fee patent year 05
Penalty fee
Additional fee for renewal fee
31.12.201206   M06   Not yet paid
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Documents cited:Search[XY]  - W. J. SHIM, "A Novel Growth Method of Single-Crystalline Bi Nanowires", ELECTRONIC MATERIALS LETTERS, (20060331), vol. 2, no. 1, pages 33 - 36, XP055007019 [X] 1-3,7-10,14-16,19 * the whole document * [Y] 4-6
 [XY]  - KIM D H ET AL, "Effect of rapid thermal annealing on thermoelectric properties of bismuth telluride films grown by co-sputtering", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 131, no. 1-3, doi:10.1016/J.MSEB.2006.03.034, ISSN 0921-5107, (20060715), pages 106 - 110, (20060715), XP025099819 [X] 1,3-6 * page 108 - page 109 * [Y] 4-6

DOI:   http://dx.doi.org/10.1016/j.mseb.2006.03.034
International search[A]US6841013  (WEINER ANITA MIRIAM [US], et al);
 [A]KR20060021580  (POSTECH FOUNDATION [KR]);
 [A]KR20060098959  (SAMSUNG ELECTRONICS CO LTD [KR]);
 [A]  - JIN C.G. ET AL., "Fabrication of large-area single crystal bismuth nanowire arrays", JOURNAL OF MATERIALS CHEMISTRY, (2003), vol. 13, pages 1743 - 1746, XP008131537

DOI:   http://dx.doi.org/10.1039/B302303F
by applicant   - W. J. SHIM ET AL., A NOVEL GROWTH METHOD OF SINGLE-CRYSTALLINE BI NANOWIRES, ELECTRONIC MATERIALS LETTERS, (20060331), vol. 2, no. 1, pages 33 - 36
    - "Effect of rapid thermal annealing on thermoelectric properties of bismuth telluride films grown by co-sputtering", KIM D. H. ET AL., Materials Science and Engineering B, ELSEVIER SEQUOIA, (20060715), vol. 131, pages 106 - 110
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.