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EP2045920
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EP About this file: EP2045920
| EP2045920 - Switching circuit having low threshold voltage [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 01.07.2016 Database last updated on 21.03.2026 | Most recent event Tooltip | 01.07.2016 | Application deemed to be withdrawn | published on 03.08.2016 [2016/31] | Applicant(s) | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | [N/P] |
| Former [2009/15] | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | Inventor(s) | 01 /
Kawamura, Hiroshi 22-9 Jio-cho Kashihara-shi Nara 634-0805 / JP | [2009/15] | Representative(s) | Müller Hoffmann & Partner Patentanwälte mbB St.-Martin-Straße 58 81541 München / DE | [N/P] |
| Former [2009/15] | Müller - Hoffmann & Partner Patentanwälte Innere Wiener Strasse 17 81667 München / DE | Application number, filing date | 08016713.3 | 23.09.2008 | [2009/15] | Priority number, date | JP20070250170 | 26.09.2007 Original published format: JP 2007250170 | [2009/15] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2045920 | Date: | 08.04.2009 | Language: | EN | [2009/15] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.03.2009 | Classification | IPC: | H03K17/06 | [2009/15] | CPC: |
H03K17/302 (EP,US);
H03K17/0406 (EP,US);
H03K17/063 (EP,US);
H03K2017/6875 (EP,US);
H03K2217/0036 (EP,US)
| Designated contracting states | DE, FR, GB, NL [2009/51] |
| Former [2009/15] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR | Title | German: | Schaltkreis mit niedriger Schwellenspannung | [2009/15] | English: | Switching circuit having low threshold voltage | [2009/15] | French: | Circuit de commutation disposant d'une tension de seuil faible | [2009/15] | Examination procedure | 30.07.2009 | Amendment by applicant (claims and/or description) | 30.07.2009 | Examination requested [2009/37] | 09.10.2009 | Loss of particular rights, legal effect: designated state(s) | 12.11.2009 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NO, PL, PT, RO, SE, SI, SK, TR | 08.09.2011 | Despatch of a communication from the examining division (Time limit: M04) | 19.12.2011 | Reply to a communication from the examining division | 12.12.2013 | Despatch of a communication from the examining division (Time limit: M04) | 04.04.2014 | Reply to a communication from the examining division | 19.10.2015 | Despatch of a communication from the examining division (Time limit: M04) | 01.03.2016 | Application deemed to be withdrawn, date of legal effect [2016/31] | 29.03.2016 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2016/31] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 08.09.2011 | Fees paid | Renewal fee | 27.09.2010 | Renewal fee patent year 03 | 27.09.2011 | Renewal fee patent year 04 | 27.09.2012 | Renewal fee patent year 05 | 26.09.2013 | Renewal fee patent year 06 | 26.09.2014 | Renewal fee patent year 07 | 25.09.2015 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X] US5045709 (OGAWA KENJI et al.) | [X] EP0048146 (THETA J CORP et al.) | [X] US2005068706 (LEWIS JAMES M et al.) | [X] EP0572706 (SIEMENS AG et al.) | [X] DE4429285 (SIEMENS AG et al.) | by applicant | EP0048146 | US2005068706 | EP0572706 | DE4429285 | T. KAWASAKI ET AL.: "Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications", EXT. ABST. 2005 INT. CONF. ON SOLID STATE DEVICES AND MATERIALS, September 2005 (2005-09-01), pages 206 - 207 |