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EP2065490
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EP About this file: EP2065490
| EP2065490 - GaN substrate manufacturing method, GaN substrate, and semiconductor device [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 04.02.2011 Database last updated on 31.08.2024 | Most recent event Tooltip | 04.02.2011 | Withdrawal of application | published on 09.03.2011 [2011/10] | Applicant(s) | For all designated states Sumitomo Electric Industries, Ltd. 5-33 Kitahama 4-chome, Chuo-ku Osaka-shi, Osaka 541-0041 / JP | [2009/23] | Inventor(s) | 01 /
Irikura, Masato c/o Itami Works of Sumitomo Electric Industries, Ltd. 1-1 Koyakita 1-chome Itami-shi Hyogo 664-0016 / JP | 02 /
Nakahata, Seiji c/o Itami Works of Sumitomo Electric Industries, Ltd. 1-1 Koyakita 1-chome Itami-shi Hyogo 664-0016 / JP | [2009/23] | Representative(s) | Grünecker Patent- und Rechtsanwälte PartG mbB Leopoldstrasse 4 80802 München / DE | [N/P] |
| Former [2009/23] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät Leopoldstrasse 4 80802 München / DE | Application number, filing date | 08020043.9 | 17.11.2008 | [2009/23] | Priority number, date | JP20070300899 | 20.11.2007 Original published format: JP 2007300899 | [2009/23] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2065490 | Date: | 03.06.2009 | Language: | EN | [2009/23] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 09.04.2009 | Classification | IPC: | C30B29/40, H01L29/06, H01L21/302 | [2009/23] | CPC: |
H01L29/045 (EP,US);
H01L21/302 (KR);
B82Y20/00 (EP,US);
C30B29/406 (EP,US);
H01L21/304 (KR);
H01L29/0657 (EP,US);
H01L29/2003 (EP,US);
H01L29/66712 (EP,US);
H01L29/7787 (EP,US);
H01L29/7802 (EP,US);
H01L29/872 (EP,US);
H01L33/16 (EP,US);
H01L33/20 (EP,US);
H01L33/32 (EP,US);
H01S5/22 (EP,US);
H01S5/34333 (EP,US)
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| Designated contracting states | DE, FR, GB [2010/06] |
| Former [2009/23] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR | Title | German: | Herstellungsverfahren für ein GaN-Substrat, GaN-Substrat und Halbleitervorrichtung | [2009/23] | English: | GaN substrate manufacturing method, GaN substrate, and semiconductor device | [2009/23] | French: | Procédé de fabrication d'un substrat de GaN, substrat de GaN, et dispositif semi-conducteur | [2009/23] | Examination procedure | 27.10.2009 | Amendment by applicant (claims and/or description) | 28.10.2009 | Examination requested [2009/50] | 04.12.2009 | Loss of particular rights, legal effect: designated state(s) | 12.01.2010 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR | 04.10.2010 | Application withdrawn by applicant [2011/10] | Fees paid | Penalty fee | Additional fee for renewal fee | 30.11.2010 | 03 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]US2007085163 (LEE CHANG H [KR], et al) [X] 1-8 * paragraphs [0008] , [0032]; figure 4; example 1; claim 9; table 1 *; | [X]EP1475826 (SUMITOMO ELECTRIC INDUSTRIES [JP], et al) [X] 1-8 * paragraphs [0024] - [0034]; figures 5,6 *; | [A] - CAO Y G ET AL, "Observation of a quantum-confinement effect with GaN nanoparticles synthesized through a new gas reaction route", APPLIED PHYSICS A (MATERIALS SCIENCE PROCESSING), SPRINGER-VERLAG [DE], (200008), vol. A71, no. 2, ISSN 0947-8396, pages 229 - 231, XP002521498 [A] 1-8 * page 230 * DOI: http://dx.doi.org/10.1007/S003390000560 | by applicant | JP2000022212 | WO0022212 |