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EP2043104
European procedure
Extract from the Register of European Patents
EP About this file: EP2043104
| EP2043104 - 3-Level non-volatile semiconductor memory device and method of driving the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 22.03.2013 Database last updated on 07.04.2026 | Most recent event Tooltip | 22.03.2013 | No opposition filed within time limit | published on 24.04.2013 [2013/17] | Applicant(s) | For all designated states Samsung Electronics Co., Ltd. 129, Samsung-ro Yeongtong-gu Suwon-si, Gyeonggi-do, 443-742 / KR | [2012/39] |
| Former [2009/14] | For all designated states Samsung Electronics Co., Ltd. 416, Maetan-dong, Yeongtong-gu Suwon-si Gyeonggi-do 443-742 / KR | Inventor(s) | 01 /
Park, Ki Tae No. 1105-1203, Jugong Apartment Jinangol Maeul Jinan-ri Taean-eup Hwasung-si Gyeonggi-do / KR | 02 /
Choi, Jung Dal No. 205-1603, Dongsuwon LG Village Nangpo-dong Paldal-gu Suwon-si Gyeonggi-do / KR | 03 /
Jo, Sung Kyu No. 105-301, Hyundae Home Town Yehyun Maeul Seocheon-ri Kiheung-eup Youngin-si Gyeonggi-do / KR | [2012/20] |
| Former [2009/14] | 01 /
Park, Ki Tae No. 1105-1203, Jugong Apartment Jinangol Maeul Jinan-ri Taean-eup Hwasung-si Gyeonggi-do / KR | ||
| 02 /
Choi, Jung Dal No. 205-1603, Dongsuwon LG Village Nangpo-dong Paldal-gu Suwon-si Gyeonggi-do / KR | |||
| 03 /
Jo, Sung Kyu No. 105-301, Hyundae Home Town Yehyun Maeul Seocheon-ri Kiheung-eup Youngin-si Gyeonggi-do / KR | Representative(s) | Taor, Simon Edward William Marks & Clerk LLP 90 Long Acre London WC2E 9RA / GB | [N/P] |
| Former [2012/20] | Taor, Simon Edward William Marks & Clerk LLP 90 Long Acre London WC2E 9RA / GB | ||
| Former [2009/14] | Taor, Simon Edward William Marks & Clerk 90 Long Acre London WC2E 9RA / GB | Application number, filing date | 08020162.7 | 17.07.2006 | [2009/14] | Priority number, date | KR20050069270 | 29.07.2005 Original published format: KR 20050069270 | KR20060008358 | 26.01.2006 Original published format: KR 20060008358 | [2009/14] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2043104 | Date: | 01.04.2009 | Language: | EN | [2009/14] | Type: | B1 Patent specification | No.: | EP2043104 | Date: | 16.05.2012 | Language: | EN | [2012/20] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 04.02.2009 | Classification | IPC: | G11C11/56, G11C16/10, G11C16/24 | [2009/14] | CPC: |
G11C11/5628 (EP,KR,US);
G11C16/10 (EP,KR,US);
G11C11/5642 (EP,KR,US);
G11C16/24 (EP,KR,US);
G11C16/26 (KR)
| Designated contracting states | DE, FR, GB [2009/14] | Title | German: | Nichtflüchtige dreistufige Halbleiterspeichervorrichtung und Verfahren zu ihrer Ansteuerung | [2009/14] | English: | 3-Level non-volatile semiconductor memory device and method of driving the same | [2009/14] | French: | Dispositif de mémoire semi-conductrice non volatile à trois niveaux et procédé de commande correspondant | [2009/14] | Examination procedure | 25.11.2008 | Examination requested [2009/14] | 04.08.2009 | Amendment by applicant (claims and/or description) | 28.08.2009 | Despatch of a communication from the examining division (Time limit: M06) | 08.03.2010 | Reply to a communication from the examining division | 26.03.2010 | Despatch of a communication from the examining division (Time limit: M04) | 05.08.2010 | Reply to a communication from the examining division | 21.10.2011 | Communication of intention to grant the patent | 20.02.2012 | Fee for grant paid | 20.02.2012 | Fee for publishing/printing paid | Parent application(s) Tooltip | EP06253733.7 / EP1750279 | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20060253733) is 23.07.2009 | Opposition(s) | 19.02.2013 | No opposition filed within time limit [2013/17] | Fees paid | Renewal fee | 25.11.2008 | Renewal fee patent year 03 | 30.07.2009 | Renewal fee patent year 04 | 29.07.2010 | Renewal fee patent year 05 | 29.09.2011 | Renewal fee patent year 06 | Penalty fee | Additional fee for renewal fee | 31.07.2011 | 06 M06 Fee paid on 29.09.2011 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X] US2005018488 (KIM DONG-HWAN et al.) [X] 1-7 * paragraph [0046]; figures 1,3,8A * | [X] US5287305 (YOSHIDA YUKIHIRO et al.) [X] 8-15 * column 8, line 6 - line 57; claims 1,4 * | [X] US2004190337 (CHEN JIAN et al.) [X] 1-7 * paragraph [0009] * * paragraph [0048] * * paragraph [0052] * * paragraph [0043] - paragraph [0044]; figure 10 * | [X] EP0044978 (IBM et al.) [X] 8,10-15 * the whole document * | [A] US5432735 (PARKS TERRY et al.) [A] 1,8 * column 3, line 36 - column 5, line 68; figure 2 * | [A] EP0256935 (FUJITSU LTD et al.) [A] 8 * the whole document * |