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Extract from the Register of European Patents

EP About this file: EP2009472

EP2009472 - Silicon Structure and Method of Manufacturing the Same [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  08.02.2013
Database last updated on 06.11.2024
Most recent event   Tooltip08.02.2013Withdrawal of applicationpublished on 13.03.2013  [2013/11]
Applicant(s)For all designated states
NEC Corporation
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
[N/P]
Former [2009/01]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
Inventor(s)01 / Watanabe, Shinya
c/o NEC Corporation 7-1, Shiba 5-chome, Minato-ku
Tokyo / JP
 [2009/01]
Representative(s)Vossius & Partner Patentanwälte Rechtsanwälte mbB
Siebertstrasse 3
81675 München / DE
[N/P]
Former [2009/01]Vossius & Partner
Siebertstrasse 4
81675 München / DE
Application number, filing date08159202.427.06.2008
[2009/01]
Priority number, dateJP2007017029228.06.2007         Original published format: JP 2007170292
[2009/01]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2009472
Date:31.12.2008
Language:EN
[2009/01]
Search report(s)(Supplementary) European search report - dispatched on:EP21.10.2008
ClassificationIPC:G02B6/136, // B81C1/00
[2009/01]
CPC:
G02B6/136 (EP,US); G02B6/13 (KR); B81B3/0081 (EP,US);
B81C1/00626 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [2009/36]
Former [2009/01]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  NO,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Siliciumstruktur und Herstellungsverfahren dafür[2009/01]
English:Silicon Structure and Method of Manufacturing the Same[2009/01]
French:Structure au silicium et son procédé de fabrication[2009/01]
Examination procedure23.07.2008Examination requested  [2009/38]
19.06.2009Amendment by applicant (claims and/or description)
01.07.2009Loss of particular rights, legal effect: designated state(s)
29.09.2009Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HR, HU, IE, IS, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR
01.02.2013Application withdrawn by applicant  [2013/11]
Fees paidRenewal fee
23.06.2010Renewal fee patent year 03
27.06.2011Renewal fee patent year 04
31.03.2012Renewal fee patent year 05
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Documents cited:Search[A]US6020272  (FLEMING JAMES G [US]) [A] 1-20* column 8, line 52 - column 11, line 34; figures 1-3 *;
 [DY]US2005169566  (TAKAHASHI MORIO [JP]) [DY] 12,13,19,20 * abstract *;
 [XY]WO2006050607  (MICROBRIDGE TECHNOLOGIES INC [CA], et al) [X] 1,2,5-11,14,15,18 * page 19, line 9 - page 21, line 24; figures 8-13 * [Y] 12,13,19,20
by applicantJP2001521180
 JP2004037524
 JP2004133130
    - A. SUGITA ET AL., "Bridge-Suspended Silica-Waveguide Thermo-Optic Phase Shifter and Its Application to Mach-Zehnder Type Optical Switch", TRANS. TEICE, (1990), vol. E73, pages 105 - 109
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.