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Extract from the Register of European Patents

EP About this file: EP2154271

EP2154271 - Apparatus for growing III-nitride-bulk crystals [Right-click to bookmark this link]
Former [2010/07]Method and apparatus for growing III-nitride-bulk crystals
[2012/10]
StatusNo opposition filed within time limit
Status updated on  31.05.2013
Database last updated on 19.07.2024
Most recent event   Tooltip18.07.2014Lapse of the patent in a contracting state
New state(s): HU		published on 20.08.2014  [2014/34]
Applicant(s)For all designated states
Forschungsverbund Berlin E.V.
Rudower Chaussee 17
12489 Berlin / DE
[2010/07]
Inventor(s)01 / Fornari, Roberto, Prof. Dr.
/ Büchnerweg 46
12489 Berlin / DE
 [2012/30]
Former [2010/07]01 / Fornari, Roberto, Prof. Dr.
Büchnerweg 46
12489 Berlin / DE
Representative(s)Gulde, Klaus W., et al
Gulde & Partner
Patent- und Rechtsanwaltskanzlei mbB
Wallstrasse 58/59
10179 Berlin / DE
[N/P]
Former [2010/07]Gulde, Klaus W., et al
Anwaltskanzlei Gulde, Hengelhaupt, Ziebig & Schneider Wallstrasse 58/59
10179 Berlin / DE
Application number, filing date08161254.128.07.2008
[2010/07]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP2154271
Date:17.02.2010
Language:DE
[2010/07]
Type: B1 Patent specification 
No.:EP2154271
Date:25.07.2012
Language:DE
[2012/30]
Search report(s)(Supplementary) European search report - dispatched on:EP24.11.2008
ClassificationIPC:C30B25/14, C30B29/40, C23C16/455, C23C16/448, C23C16/34
[2010/07]
CPC:
C30B25/14 (EP); C23C14/0021 (EP); C23C14/0617 (EP);
C23C14/243 (EP); C30B29/403 (EP)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2010/07]
TitleGerman:Vorrichtung zur Züchtung von III-Nitrid-Volumen-Kristallen[2012/10]
English:Apparatus for growing III-nitride-bulk crystals[2012/10]
French:Dispositif pour la croissance de cristaux de III-nitrure volumineux[2012/10]
Former [2010/07]Vorrichtung und Verfahren zur Züchtung von III-Nitrid-Volumen-Kristallen
Former [2010/07]Method and apparatus for growing III-nitride-bulk crystals
Former [2010/07]Dispositif et procédé pour la croissance de cristaux de III-nitrure volumineux
Examination procedure30.06.2009Amendment by applicant (claims and/or description)
22.07.2010Examination requested  [2010/35]
22.03.2011Despatch of a communication from the examining division (Time limit: M04)
21.06.2011Reply to a communication from the examining division
05.03.2012Communication of intention to grant the patent
06.06.2012Fee for grant paid
06.06.2012Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  22.03.2011
Opposition(s)26.04.2013No opposition filed within time limit [2013/27]
Fees paidRenewal fee
22.07.2010Renewal fee patent year 03
29.07.2011Renewal fee patent year 04
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU28.07.2008
CY25.07.2012
CZ25.07.2012
DK25.07.2012
EE25.07.2012
FI25.07.2012
HR25.07.2012
IT25.07.2012
LT25.07.2012
LV25.07.2012
MT25.07.2012
NL25.07.2012
RO25.07.2012
SI25.07.2012
SK25.07.2012
TR25.07.2012
IE28.07.2012
LU28.07.2012
BE31.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
BG25.10.2012
NO25.10.2012
GR26.10.2012
ES05.11.2012
IS25.11.2012
PT26.11.2012
[2014/34]
Former [2014/27]CY25.07.2012
CZ25.07.2012
DK25.07.2012
EE25.07.2012
FI25.07.2012
HR25.07.2012
IT25.07.2012
LT25.07.2012
LV25.07.2012
MT25.07.2012
NL25.07.2012
RO25.07.2012
SI25.07.2012
SK25.07.2012
TR25.07.2012
IE28.07.2012
LU28.07.2012
BE31.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
BG25.10.2012
NO25.10.2012
GR26.10.2012
ES05.11.2012
IS25.11.2012
PT26.11.2012
Former [2014/21]CY25.07.2012
CZ25.07.2012
DK25.07.2012
EE25.07.2012
FI25.07.2012
HR25.07.2012
IT25.07.2012
LT25.07.2012
LV25.07.2012
MT25.07.2012
NL25.07.2012
RO25.07.2012
SI25.07.2012
SK25.07.2012
TR25.07.2012
IE28.07.2012
BE31.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
BG25.10.2012
NO25.10.2012
GR26.10.2012
ES05.11.2012
IS25.11.2012
PT26.11.2012
Former [2013/34]CY25.07.2012
CZ25.07.2012
DK25.07.2012
EE25.07.2012
FI25.07.2012
HR25.07.2012
IT25.07.2012
LT25.07.2012
LV25.07.2012
MT25.07.2012
NL25.07.2012
RO25.07.2012
SI25.07.2012
SK25.07.2012
IE28.07.2012
BE31.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
BG25.10.2012
NO25.10.2012
GR26.10.2012
ES05.11.2012
IS25.11.2012
PT26.11.2012
Former [2013/33]CY25.07.2012
CZ25.07.2012
DK25.07.2012
EE25.07.2012
FI25.07.2012
HR25.07.2012
IT25.07.2012
LT25.07.2012
LV25.07.2012
NL25.07.2012
RO25.07.2012
SI25.07.2012
SK25.07.2012
IE28.07.2012
BE31.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
ES05.11.2012
IS25.11.2012
PT26.11.2012
Former [2013/24]CY25.07.2012
CZ25.07.2012
DK25.07.2012
EE25.07.2012
FI25.07.2012
HR25.07.2012
IT25.07.2012
LT25.07.2012
LV25.07.2012
NL25.07.2012
RO25.07.2012
SI25.07.2012
SK25.07.2012
BE31.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
ES05.11.2012
IS25.11.2012
PT26.11.2012
Former [2013/23]CY25.07.2012
CZ25.07.2012
DK25.07.2012
EE25.07.2012
FI25.07.2012
HR25.07.2012
IT25.07.2012
LT25.07.2012
LV25.07.2012
NL25.07.2012
RO25.07.2012
SI25.07.2012
SK25.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
ES05.11.2012
IS25.11.2012
PT26.11.2012
Former [2013/22]CY25.07.2012
CZ25.07.2012
DK25.07.2012
EE25.07.2012
FI25.07.2012
HR25.07.2012
LT25.07.2012
LV25.07.2012
NL25.07.2012
SI25.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
ES05.11.2012
IS25.11.2012
PT26.11.2012
Former [2013/21]CY25.07.2012
DK25.07.2012
FI25.07.2012
HR25.07.2012
LT25.07.2012
LV25.07.2012
NL25.07.2012
SI25.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
IS25.11.2012
PT26.11.2012
Former [2013/20]CY25.07.2012
FI25.07.2012
HR25.07.2012
LT25.07.2012
LV25.07.2012
NL25.07.2012
SI25.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
IS25.11.2012
PT26.11.2012
Former [2013/15]CY25.07.2012
FI25.07.2012
HR25.07.2012
LT25.07.2012
LV25.07.2012
NL25.07.2012
SI25.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
IS25.11.2012
PT26.11.2012
Former [2013/13]CY25.07.2012
FI25.07.2012
HR25.07.2012
LT25.07.2012
LV25.07.2012
SI25.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
IS25.11.2012
PT26.11.2012
Former [2013/11]CY25.07.2012
FI25.07.2012
HR25.07.2012
LT25.07.2012
LV25.07.2012
SI25.07.2012
MC31.07.2012
NO25.10.2012
GR26.10.2012
IS25.11.2012
Former [2013/10]CY25.07.2012
FI25.07.2012
HR25.07.2012
LT25.07.2012
NO25.10.2012
IS25.11.2012
Former [2013/09]FI25.07.2012
LT25.07.2012
NO25.10.2012
Former [2013/08]LT25.07.2012
NO25.10.2012
Documents cited:Search[XY]  - ATTOLINI G ET AL, "A vertical reactor for deposition of gallium nitride", MATERIALS CHEMISTRY AND PHYSICS ELSEVIER SWITZERLAND, (20001016), vol. 66, no. 2-3, ISSN 0254-0584, pages 213 - 218, XP002502840 [X] 1 * figure 1 * [Y] 15,16

DOI:   http://dx.doi.org/10.1016/S0254-0584(00)00327-8
 [X]  - CAI ET AL, "Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth", INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, PERGAMON PRESS, GB, (20080118), vol. 51, no. 5-6, ISSN 0017-9310, pages 1264 - 1280, XP022490264 [X] 1 * figure 1 *

DOI:   http://dx.doi.org/10.1016/j.ijheatmasstransfer.2007.12.004
 [Y]  - SICHE ET AL, "Growth of GaN crystals from chlorine-free gas phase", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, (20080124), vol. 310, no. 5, ISSN 0022-0248, pages 916 - 919, XP022492823 [Y] 15-17 * paragraph [03.1] *

DOI:   http://dx.doi.org/10.1016/j.jcrysgro.2007.11.135
 [Y]  - HUAQIANG WU ET AL, "Thick GaN layer grown by Ga vapor transport technique", HIGH PERFORMANCE DEVICES, 2004. PROCEEDINGS. IEEE LESTER EASTMAN CONFE RENCE ON RENSSELAER POLYTECHNIC INST., TROY, NY, USA 4-6 AUG., 2004, PISCATAWAY, NJ, USA,IEEE, (20040804), ISBN 978-981-256-196-1, pages 121 - 125, XP010857766 [Y] 15-17 * paragraphs [0002] , [0003]; figure 1 *

DOI:   http://dx.doi.org/10.1109/LECHPD.2004.1549682
 [A]  - SYTNIEWSKI L J ET AL, "CFD optimisation of up-flow vertical HVPE reactor for GaN growth", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 310, no. 14, ISSN 0022-0248, (20080701), pages 3358 - 3365, (20080418), XP022715399 [A] 1-17 * page 3359, column 1 *

DOI:   http://dx.doi.org/10.1016/j.jcrysgro.2008.04.017
by applicant   - MADAR R ET AL., J. CRYSTAL GROWTH, (1975), vol. 31, page 197
    - KARPINSKI ET AL., MATER. RES. SOC. SYMP. PROC, (1984), vol. 22, pages 73 - 76
    - POROWSKI S ET AL., J. CRYSTAL GROWTH, (1997), vol. 178, page 174
    - KAWAMURA F ET AL., JPN J. APPL. PHYS., (2003), vol. 42, page L879
    - HUSSY S ET AL., J. CRYSTAL GROWTH, (2008), vol. 310, page 738
    - YOSHIKAWA A ET AL., J. CRYSTAL GROWTH, (2004), vol. 260, page 67
    - HASHIMOTO T ET AL., NATURE MATERIALS, (2007), vol. 6, page 568
    - SONG ET AL., J. CRYSTAL GROWTH, (2003), vol. 247, page 275
    - SHIN T I ET AL., J. CRYSTAL GROWTH, (2006), vol. 292, page 216
    - KAMLER G ET AL., J. CRYSTAL GROWTH, (2000), vol. 212, page 39
    - SHIBATA T ET AL., J. CRYSTAL GROWTH, (1998), vol. 189-190, page 67
    - HASEGAWA ET AL., PHYS. STAT. SOL., (1999), vol. A 176, page 421
    - MISKYS C R ET AL., PHYS. STAT. SOL., (2003), vol. C 6, page 1627
    - LUCZNIK ET AL., PHYS. STAT. SOL., (2006), vol. C 3, page 1453
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