Extract from the Register of European Patents

EP Citations: EP2031644

Cited inSearch
Type:Patent literature
Publication No.:WO2006011851  [XYI]
 (AGENCY SCIENCE TECH & RES [SG], et al) [X] 1,3-7,9,12-18,20-23 * page 1, line 6 - line 7 * * page 2, line 6 - line 25 * * page 3, line 22 - page 7, line 27 * * page 9, line 4 - line 10; figures 2-6 * [Y] 2,19 [I] 8,10,11;
Type:Patent literature
Publication No.:EP1763084  [X]
 (FUJITSU LTD [JP]) [X] 1,3-7,9,16-18,20-23 * paragraph [0025] - paragraph [0028] * * paragraph [0052] - paragraph [0053] * * paragraph [0063] * * paragraph [0078] * * paragraph [0080] * * paragraph [0090] * * paragraph [0147] - paragraph [0149]; figure 3 *;
Type:Patent literature
Publication No.:US2007123042  [XY]
 (RIM KERN [US], et al) [X] 23 * paragraph [0020] - paragraph [0036]; figure 1AB * [Y] 2,19;
Type:Non-patent literature
Publication information:[A]  - ZHU SHIYANG ET AL, "Enhanced thermal stability of nickel germanide on thin epitaxial germanium by adding an ultrathin titanium layer", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20070731), vol. 91, no. 5, doi:10.1063/1.2768203, ISSN 0003-6951, pages 51905 - 51905, XP012100326 [A] 1-23 * the whole document *
DOI: http://dx.doi.org/10.1063/1.2768203
Cited inby applicant
Type:Non-patent literature
Publication information:   - D. BRUNCO ET AL., "Germanium MOSFET Devices: Advances in Material Understanding, Process Development, and Electrical Performance", JOURNAL OF ELECTROCHEMICAL SOCIETY, (2008), vol. 155, no. 7, doi:doi:10.1149/1.2919115, pages H552 - H561, XP055016494
DOI: http://dx.doi.org/10.1149/1.2919115