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EP2190024
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EP About this file: EP2190024
| EP2190024 - Photoelectric device with multiple junctions and method of manufacturing same [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 22.04.2011 Database last updated on 29.07.2024 | Most recent event Tooltip | 22.04.2011 | Application deemed to be withdrawn | published on 25.05.2011 [2011/21] | Applicant(s) | For all designated states Université de Neuchâtel Faubourg du Lac 5a 2000 Neuchatel / CH | [2010/21] | Inventor(s) | 01 /
Domine, Didier Route de Corban 10 2825 Courchapoix / CH | 02 /
Cuony, Peter Desor 3 2000 Neuchâtel / CH | 03 /
Bailat, Julien Au village 26 2855 Glovelier / CH | [2010/21] | Representative(s) | Bovard SA Neuchâtel Rue des Noyers 11 2000 Neuchâtel / CH | [N/P] |
| Former [2010/21] | GLN Rue du Puits-Godet 8a 2000 Neuchâtel / CH | Application number, filing date | 08169424.2 | 19.11.2008 | [2010/21] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP2190024 | Date: | 26.05.2010 | Language: | FR | [2010/21] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 08.05.2009 | Classification | IPC: | H01L31/0236, H01L31/078 | [2010/21] | CPC: |
H01L31/0236 (US);
H01L31/02366 (EP);
H01L31/0547 (EP,US);
H01L31/0687 (EP,US);
H01L31/1824 (EP,US);
H01L31/202 (EP,US);
Y02E10/52 (EP,US);
Y02E10/544 (EP,US);
Y02E10/545 (EP,US);
Y02P70/50 (EP,US)
(-)
| Designated contracting states | [2011/05] |
| Former [2010/21] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR | Title | German: | Fotoelektrische Vorrichtung mit Multi-Schnittstellen und ihr Umsetzungsverfahren | [2010/21] | English: | Photoelectric device with multiple junctions and method of manufacturing same | [2010/21] | French: | Dispositif photoélectrique a jonctions multiples et son procédé de realisation | [2010/21] | Examination procedure | 30.11.2010 | Application deemed to be withdrawn, date of legal effect [2011/21] | 10.01.2011 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2011/21] | Fees paid | Penalty fee | Additional fee for renewal fee | 30.11.2010 | 03 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XD]US2002011263 (MURAMOTO MASAHIKO [JP], et al) [XD] 1-13 * abstract * * paragraph [0032] - paragraph [0034] * * paragraphs [0049] , [0063] * * paragraph [0100] * * paragraph [0109] - paragraph [0119] *; | [XD]US6825408 (NAGANO YASUE [JP], et al) [XD] 1-13 * abstract * * paragraphs [0026] , [0044] *; | [A]US2002134425 (YAMAMOTO HIROSHI [JP], et al) [A] 1,9 * abstract * * paragraph [0020] - paragraph [0026] *; | [A]US2002050289 (WADA KENJI [JP], et al) [A] 1,9 * abstract * * paragraph [0023] - paragraph [0039] *; | [A] - SANNOMIYA H ED - JAPAN SOCIETY OF APPLIED PHYSICS, "A-SIC/A-SI/A-SIGE MULTI-BANDGAP STACKED SOLAR CELLS WITH BANDGAP PROFILING", PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SCIENCE AND ENGINEERING CONFERENCE. KYOTO, NOV. 26 - 30, 1990; [PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SCIENCE AND ENGINEERING CONFERENCE], KYOTO, KYOTO UNIVERSITY, JP, (19901126), vol. CONF. 5, pages 387 - 390, XP000215068 [A] 1,9 * the whole document * | by applicant | US6825408 | US6459034 | WO2007113037 | - S. FAY ET AL., "Opto-electronic properties of rough LP- CVD ZnO:B for use as TCO in thin-film silicon solar cells", THIN SOLID FILMS, (2007), vol. 515, no. 24, doi:doi:10.1016/j.tsf.2007.03.130, pages 8558 - 8561, XP022265913 DOI: http://dx.doi.org/10.1016/j.tsf.2007.03.130 | - J. MEIER ET AL., "Progress in up-scaling of thin film silicon solar cells by large- area PECVD KAI systems", PROC. OF THE 31TH IEEE PHOTOVOLTAIC SPECIALIST CONFERENCE, (200501), doi:doi:10.1109/PVSC.2005.1488418, pages 1464 - 1467, XP010823034 DOI: http://dx.doi.org/10.1109/PVSC.2005.1488418 | - S. FAY ET AL., "Opto-electronic properties of rough LP-CVD ZnO:B for use as TCO in thin-film silicon solar cells", THIN SOLID FILMS, (2007), vol. 515, no. 24, doi:doi:10.1016/j.tsf.2007.03.130, pages 8558 - 8561, XP022265913 DOI: http://dx.doi.org/10.1016/j.tsf.2007.03.130 | - D. FISCHER ET AL., 25 IEEE PVSC, (1996), page 1053 | - THORNTON, J. VAC. SCI. TECHNOL. A, (1986), vol. 4, no. 6, pages 3059 - 3065 | - DALAKOS; PLAWSKY; PERSANS, MRS SYMP. PROC., (2003), vol. 762 | - G. CICALA; G. BRUNO; P. CAPEZZUTO, PURE & APPL. CHEM., (1996), vol. 68, no. 5, pages 1143 - 1149 | - J. BENEDICT ET AL., PROC. MAT. RES. SOC. SYMP., (1992), page 254 |