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EP2171757
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EP About this file: EP2171757
| EP2171757 - NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 12.09.2014 Database last updated on 02.11.2024 | Most recent event Tooltip | 12.09.2014 | Application deemed to be withdrawn | published on 15.10.2014 [2014/42] | Applicant(s) | For all designated states Power Integrations, Inc. 5245 Hellyer Avenue San Jose, CA 95138 / US | [2013/44] |
| Former [2012/02] | For all designated states SS SC IP, LLC 1401 Livingston Lane Jackson, MS 39213 / US | ||
| Former [2010/14] | For all designated states Semisouth Laboratories, Inc. 201 Research Boulevard Starkville, MS 39759 / US | Inventor(s) | 01 /
SANKIN, Igor 365 Commodore Way 13 Perrysburg, OH 43551 / US | 02 /
MERRETT, Joseph, Neil c/o SemiSouth Laboratories.Inc. 201 Research Blvd Starkville, MS 39759 / US | [2010/22] |
| Former [2010/14] | 01 /
SANKIN, Igor 365 Commodore Way 13 Perrysburg, OH 43551 / US | ||
| 02 /
MERRETT, Joseph, Neil 1258 Prisock Road Starkville, MS 39759 / US | Representative(s) | Clark, Jane Anne Mathys & Squire The Shard 32 London Bridge Street London SE1 9SG / GB | [N/P] |
| Former [2010/14] | Clark, Jane Anne Mathys & Squire LLP 120 Holborn London EC1N 2SQ / GB | Application number, filing date | 08781291.3 | 02.07.2008 | [2010/14] | WO2008US69043 | Priority number, date | US20070822568 | 06.07.2007 Original published format: US 822568 | [2010/14] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO2009009380 | Date: | 15.01.2009 | Language: | EN | [2009/03] | Type: | A2 Application without search report | No.: | EP2171757 | Date: | 07.04.2010 | Language: | EN | The application published by WIPO in one of the EPO official languages on 15.01.2009 takes the place of the publication of the European patent application. | [2010/14] | Search report(s) | International search report - published on: | EP | 05.03.2009 | Classification | IPC: | H01L27/098, H01L29/808, H01L29/812, H01L21/04, H01L21/8232 | [2010/14] | CPC: |
H01L29/808 (EP,US);
H01L27/098 (EP,US);
H01L29/0619 (EP,US);
H01L29/8083 (EP,US);
H01L29/8122 (EP,US);
H01L29/8124 (EP,US);
H01L29/861 (EP,US);
H01L29/868 (EP,US);
H01L29/872 (EP,US);
H03K17/08142 (EP,US);
H03K17/08148 (EP,US);
H03K17/567 (EP,US);
H03K17/6871 (EP,US);
H01L29/1608 (EP,US);
H01L29/2003 (EP,US);
H03K2017/6875 (EP,US)
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| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR [2010/14] | Title | German: | NORMALERWEISE AUSGESCHALTETE INTEGRIERTE JFET-LEISTUNGSSCHALTER IN HALBLEITERN MIT GROSSEM BANDABSTAND UND HERSTELLUNGSVERFAHREN | [2010/14] | English: | NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING | [2010/14] | French: | COMMUTATEURS DE PUISSANCE JFET INTÉGRÉS NORMALEMENT FERMÉS DANS DES SEMI-CONDUCTEURS A LARGE BANDE INTERDITE ET PROCÉDÉS DE FABRICATION | [2010/14] | Entry into regional phase | 04.02.2010 | National basic fee paid | 04.02.2010 | Designation fee(s) paid | 04.02.2010 | Examination fee paid | Examination procedure | 04.02.2010 | Amendment by applicant (claims and/or description) | 04.02.2010 | Examination requested [2010/14] | 16.09.2011 | Despatch of a communication from the examining division (Time limit: M06) | 26.03.2012 | Reply to a communication from the examining division | 01.11.2013 | Despatch of a communication from the examining division (Time limit: M06) | 13.05.2014 | Application deemed to be withdrawn, date of legal effect [2014/42] | 10.06.2014 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2014/42] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 16.09.2011 | Fees paid | Renewal fee | 19.11.2010 | Renewal fee patent year 03 | 28.07.2011 | Renewal fee patent year 04 | 13.07.2012 | Renewal fee patent year 05 | 10.07.2013 | Renewal fee patent year 06 | Penalty fee | Additional fee for renewal fee | 31.07.2010 | 03 M06 Fee paid on 19.11.2010 | 31.07.2014 | 07 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [DX]WO2006060337 (SEMISOUTH LAB INC [US], et al) [DX] 1-24 * page 29, line 16 - page 30, line 10; figures 22A-22H * * page 31, line 9 - page 32, line 13; figures 24A-24J,25A-25D *; | [X]JP2006202987 (MATSUSHITA ELECTRIC IND CO LTD) [X] 7-9,15-19 * figures 2,4-9 *; | [A]US2007085147 (IMOTO TSUTOMU [JP]) [A] 1-6* paragraph [0108] - paragraph [0125]; figures 4A-4E,5F-5J *; | [XP]US2007243668 (SANKIN IGOR [US], et al) [XP] 1-24 * paragraphs [0161] , [0169] , [0173] , [0175]; figures 15,22A-22H,24A-24J,25A-25D * | by applicant | WO2006060337 |