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Extract from the Register of European Patents

EP About this file: EP2198466

EP2198466 - SILICON LIGHT EMITTING DEVICE WITH CARRIER INJECTION [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  10.10.2014
Database last updated on 31.08.2024
Most recent event   Tooltip15.07.2016Lapse of the patent in a contracting state
New state(s): MT		published on 17.08.2016  [2016/33]
Applicant(s)For all designated states
Insiava (Pty) Limited
1st Floor
Graduate Center
University of Pretoria
Lynnwood Road, Hillcrest
0083 Pretoria / ZA
[N/P]
Former [2010/25]For all designated states
Insiava (Pty) Limited
1st Floor Graduate Center University of Pretoria Lynnwood Road Hillcrest
0083 Pretoria / ZA
Inventor(s)01 / DU PLESSIS, Monuko
Rockwood Crescent 228
Woodlands Estate
Moreletapark
0044 Pretoria / ZA
 [2013/49]
Former [2010/25]01 / DU PLESSIS, Monuko
Rockwood Crescent 228 Woodlands Estate Moreletapark
0044 Pretoria / ZA
Representative(s)Lloyd, Patrick Alexander Desmond
Reddie & Grose LLP The White Chapel Building
10 Whitechapel High Street
London E1 8QS / GB
[N/P]
Former [2013/49]Lloyd, Patrick Alexander Desmond
Reddie & Grose LLP
16 Theobalds Road
London WC1X 8PL / GB
Former [2010/25]Lloyd, Patrick Alexander Desmond
Reddie & Grose 16 Theobalds Road London
WC1X 8PL / GB
Application number, filing date08807923.108.10.2008
[2010/25]
WO2008IB54122
Priority number, dateZA2007000855908.10.2007         Original published format: ZA 200708559
[2010/25]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2009047716
Date:16.04.2009
Language:EN
[2009/16]
Type: A1 Application with search report 
No.:EP2198466
Date:23.06.2010
Language:EN
The application published by WIPO in one of the EPO official languages on 16.04.2009 takes the place of the publication of the European patent application.
[2010/25]
Type: B1 Patent specification 
No.:EP2198466
Date:04.12.2013
Language:EN
[2013/49]
Search report(s)International search report - published on:EP16.04.2009
ClassificationIPC:H01L33/00, H01L27/15
[2010/25]
CPC:
H01L33/34 (EP,US); H01L33/0008 (EP,US); H01L33/0016 (EP,US);
H01L27/15 (EP,US); H01L33/54 (EP,US)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2010/25]
TitleGerman:SILIZIUM-LEUCHTBAUELEMENT MIT TRÄGERINJEKTION[2010/25]
English:SILICON LIGHT EMITTING DEVICE WITH CARRIER INJECTION[2010/25]
French:DISPOSITIF ÉLECTROLUMINESCENT AU SILICIUM AVEC INJECTION DE PORTEURS[2010/25]
Entry into regional phase08.04.2010National basic fee paid 
08.04.2010Designation fee(s) paid 
08.04.2010Examination fee paid 
Examination procedure08.04.2010Examination requested  [2010/25]
11.06.2010Amendment by applicant (claims and/or description)
20.09.2011Despatch of a communication from the examining division (Time limit: M04)
18.11.2011Observations by third parties
20.01.2012Reply to a communication from the examining division
15.05.2012Despatch of a communication from the examining division (Time limit: M04)
25.07.2012Reply to a communication from the examining division
06.12.2012Despatch of a communication from the examining division (Time limit: M04)
15.04.2013Reply to a communication from the examining division
15.07.2013Communication of intention to grant the patent
23.10.2013Fee for grant paid
23.10.2013Fee for publishing/printing paid
Divisional application(s)EP13184313.8  / EP2674991
The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  20.09.2011
Opposition(s)05.09.2014No opposition filed within time limit [2014/46]
Fees paidRenewal fee
05.08.2010Renewal fee patent year 03
20.10.2011Renewal fee patent year 04
23.10.2012Renewal fee patent year 05
24.10.2013Renewal fee patent year 06
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU08.10.2008
AT04.12.2013
BE04.12.2013
BG04.12.2013
CY04.12.2013
CZ04.12.2013
DK04.12.2013
EE04.12.2013
ES04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
MC04.12.2013
MT04.12.2013
NL04.12.2013
PL04.12.2013
RO04.12.2013
SE04.12.2013
SI04.12.2013
SK04.12.2013
TR04.12.2013
NO04.03.2014
GR05.03.2014
IS04.04.2014
PT04.04.2014
[2016/33]
Former [2016/32]HU08.10.2008
AT04.12.2013
BE04.12.2013
BG04.12.2013
CY04.12.2013
CZ04.12.2013
DK04.12.2013
EE04.12.2013
ES04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
MC04.12.2013
NL04.12.2013
PL04.12.2013
RO04.12.2013
SE04.12.2013
SI04.12.2013
SK04.12.2013
TR04.12.2013
NO04.03.2014
GR05.03.2014
IS04.04.2014
PT04.04.2014
Former [2016/28]AT04.12.2013
BE04.12.2013
BG04.12.2013
CY04.12.2013
CZ04.12.2013
DK04.12.2013
EE04.12.2013
ES04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
MC04.12.2013
NL04.12.2013
PL04.12.2013
RO04.12.2013
SE04.12.2013
SI04.12.2013
SK04.12.2013
NO04.03.2014
GR05.03.2014
IS04.04.2014
PT04.04.2014
Former [2016/25]AT04.12.2013
BE04.12.2013
BG04.12.2013
CY04.12.2013
CZ04.12.2013
DK04.12.2013
EE04.12.2013
ES04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
MC04.12.2013
NL04.12.2013
PL04.12.2013
RO04.12.2013
SE04.12.2013
SI04.12.2013
SK04.12.2013
NO04.03.2014
IS04.04.2014
PT04.04.2014
Former [2015/27]AT04.12.2013
BE04.12.2013
CY04.12.2013
CZ04.12.2013
DK04.12.2013
EE04.12.2013
ES04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
MC04.12.2013
NL04.12.2013
PL04.12.2013
RO04.12.2013
SE04.12.2013
SI04.12.2013
SK04.12.2013
NO04.03.2014
IS04.04.2014
PT04.04.2014
Former [2015/14]AT04.12.2013
BE04.12.2013
CY04.12.2013
CZ04.12.2013
DK04.12.2013
EE04.12.2013
ES04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
NL04.12.2013
PL04.12.2013
RO04.12.2013
SE04.12.2013
SI04.12.2013
SK04.12.2013
NO04.03.2014
IS04.04.2014
PT04.04.2014
Former [2014/48]AT04.12.2013
BE04.12.2013
CY04.12.2013
CZ04.12.2013
DK04.12.2013
EE04.12.2013
ES04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
NL04.12.2013
PL04.12.2013
RO04.12.2013
SE04.12.2013
SK04.12.2013
NO04.03.2014
IS04.04.2014
PT04.04.2014
Former [2014/37]AT04.12.2013
BE04.12.2013
CY04.12.2013
CZ04.12.2013
EE04.12.2013
ES04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
NL04.12.2013
PL04.12.2013
RO04.12.2013
SE04.12.2013
SK04.12.2013
NO04.03.2014
IS04.04.2014
PT04.04.2014
Former [2014/36]AT04.12.2013
BE04.12.2013
CY04.12.2013
EE04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
NL04.12.2013
SE04.12.2013
NO04.03.2014
IS04.04.2014
Former [2014/34]AT04.12.2013
BE04.12.2013
CY04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
NL04.12.2013
SE04.12.2013
NO04.03.2014
Former [2014/26]AT04.12.2013
CY04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
NL04.12.2013
SE04.12.2013
NO04.03.2014
Former [2014/25]AT04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
LV04.12.2013
NL04.12.2013
SE04.12.2013
NO04.03.2014
Former [2014/24]AT04.12.2013
FI04.12.2013
HR04.12.2013
LT04.12.2013
NL04.12.2013
SE04.12.2013
NO04.03.2014
Former [2014/23]FI04.12.2013
HR04.12.2013
LT04.12.2013
NL04.12.2013
SE04.12.2013
NO04.03.2014
Former [2014/22]FI04.12.2013
LT04.12.2013
NL04.12.2013
SE04.12.2013
NO04.03.2014
Former [2014/20]LT04.12.2013
NO04.03.2014
Cited inInternational search[DA]US6111271  (SNYMAN LUKAS W [ZA], et al) [DA] 1 * the whole document *;
 [A]WO02097894  (UNISEARCH LTD [AU], et al) [A] 10 * the whole document *;
 [PX]US2008128713  (SAITO SHINICHI [JP], et al) [PX] 10,11* the whole document *;
 [X]  - DU PLESSIS M ET AL, "A silicon transconductance light emitting device (TRANSLED)", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, (20000301), vol. 80, no. 3, ISSN 0924-4247, pages 242 - 248, XP004192113 [X] 10,11 * Paragraph 2 Device Design, and Fig. 1 *

DOI:   http://dx.doi.org/10.1016/S0924-4247(99)00316-7
Examination   - SNYMAN L W ET AL, "Optical sources, integrated optical detectors, and optical waveguides in standard silicon CMOS integrated circuitry", PROCEEDINGS OF SPIE, SPIE, US, (20000101), vol. 3953, doi:10.1117/12.379613, ISSN 0277-786X, pages 20 - 36, XP002563005

DOI:   http://dx.doi.org/10.1117/12.379613
    - SNYMAN L W ET AL, "Higher efficiency silicon CMOS light emitting devices (450nm-750nm) using current density and carrier injection techniques", PROCEEDINGS OF SPIE, SPIE, US, vol. 5730, doi:10.1117/12.590553, ISSN 0277-786X, (20050125), pages 59 - 72, (20050314), XP002573037

DOI:   http://dx.doi.org/10.1117/12.590553
    - SNYMAN L W ET AL, "Three Terminal n+ppn Silicon CMOS Light Emitting Devices (450nm - 750nm) with Three Order Increase in Quantum Efficiency", INDUSTRIAL ELECTRONICS, 2005. ISIE 2005. PROCEEDINGS OF THE IEEE INTER NATIONAL SYMPOSIUM ON DUBROVNIK, CROATIA JUNE 20-23, 2005, PISCATAWAY, NJ, USA,IEEE, (20050620), vol. 3, doi:10.1109/ISIE.2005.1529088, ISBN 978-0-7803-8738-6, pages 1159 - 1166, XP010850249

DOI:   http://dx.doi.org/10.1109/ISIE.2005.1529088
    - Snyman, "Two order increase in the optical emission intensity of CMOS integrated circuit Si LED's (450nm-750nm). Injection-avalanche based n pn and p np designs", Proceedings of SPIE, (20070101), ISSN 0277-786X, page 64770T, XP055025396

DOI:   http://dx.doi.org/10.1117/12.702292
other   - SNYMAN L.W. ET AL, "Optical sources, integrated optical detectors and optical waveguides in standard silicon CMOS integrated circuitry", PROCEEDINGS OF SPIE, (2000), vol. 3953, pages 20 - 36, XP002563005

DOI:   http://dx.doi.org/10.1117/12.379613
    - SNYMAN L.W. ET AL, "Higher efficiency silicon CMOS light emitting devices (450nm-750nm) using current density and carrier injection techniques", PROC. OF SPIE, (2005), vol. 5730, pages 59 - 72, XP002573037

DOI:   http://dx.doi.org/10.1117/12.590553
    - SNYMAN L.W. ET AL, "Three terminal n+ppn silicon CMOS light emitting devices (450nm-750nm) with three order increase in quantum efficiency", PROC. OF THE IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE 2005), DUBROVNIK, CROATIA, (20050620), vol. 3, pages 1159 - 1169, XP010850249

DOI:   http://dx.doi.org/10.1109/ISIE.2005.1529088
    - SNYMAN L.W. ET AL, "Two order increase in the optical emission intensity of CMOS integrated circuit Si LED's (450nm-750nm). Injection-avalanche based n+pn and p+np designs", PROCEEDINGS OF SPIE SILICON PHOTONICS II, (200706), vol. 6477, pages T1 - T10, XP003028474

DOI:   http://dx.doi.org/10.1117/12.702292
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