-
EP2113805
European procedure
Extract from the Register of European Patents
EP About this file: EP2113805
| EP2113805 - Laser irradiation method, laser irradiation apparatus and method for manufacturing crystalline semiconductor film [Right-click to bookmark this link] | |||
| Former [2009/45] | Laser irradiation apparatus and laser irradiation method | ||
| [2010/10] | Status | No opposition filed within time limit Status updated on 03.05.2013 Database last updated on 02.11.2024 | Most recent event Tooltip | 03.05.2013 | No opposition filed within time limit | published on 05.06.2013 [2013/23] | Applicant(s) | For all designated states Semiconductor Energy Laboratory Co, Ltd. 398, Hase Atsugi-shi, Kanagawa-ken 243-0036 / JP | [2009/45] | Inventor(s) | 01 /
Tanaka, Koichiro c/o Semiconductor Energy Laboratory Co., Ltd. 398, Hase Atsugi-shi Kanagawa-ken 243-0036 / JP | 02 /
Oishi, Hirotada c/o Semiconductor Energy Laboratory Co., Ltd. 398, Hase Atsugi-shi Kanagawa-ken 243-0036 / JP | [2012/26] |
| Former [2009/45] | 01 /
Tanaka, Koichiro c/o Semiconductor Energy Laboratory Co., Ltd. 398, Hase Atsugi-shi Kanagawa-ken 243-0036 / JP | ||
| 02 /
Oishi, Hirotada c/o Semiconductor Energy Laboratory Co., Ltd. 398, Hase Atsugi-shi Kanagawa-ken 243-0036 / JP | Representative(s) | Grünecker Patent- und Rechtsanwälte PartG mbB Leopoldstraße 4 80802 München / DE | [N/P] |
| Former [2012/26] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Leopoldstrasse 4 80802 München / DE | ||
| Former [2009/45] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät Leopoldstrasse 4 80802 München / DE | Application number, filing date | 09010674.1 | 21.04.2005 | [2009/45] | Priority number, date | JP20040145612 | 14.05.2004 Original published format: JP 2004145612 | [2009/45] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2113805 | Date: | 04.11.2009 | Language: | EN | [2009/45] | Type: | B1 Patent specification | No.: | EP2113805 | Date: | 27.06.2012 | Language: | EN | [2012/26] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 28.09.2009 | Classification | IPC: | B23K15/00, B23K15/10, B23K26/073, G02B27/09 | [2012/04] | CPC: |
B23K15/0093 (EP,US);
B23K26/0608 (US);
B23K15/10 (EP,US);
B23K26/0648 (US);
B23K26/0732 (EP,US);
B23K26/0738 (EP,US);
G02B27/0927 (EP,US);
G02B27/0961 (EP,US);
G02B27/0966 (EP,US);
|
| Former IPC [2009/45] | G02B27/09, B23K26/073 | Designated contracting states | DE, FI, FR, GB, NL [2009/45] | Title | German: | Laserbestrahlungsmethode, Laserbestrahlungsvorrichtung und Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht | [2010/10] | English: | Laser irradiation method, laser irradiation apparatus and method for manufacturing crystalline semiconductor film | [2010/10] | French: | Méthode et appareil d'irradiation par laser et méthode de fabrication d'un film cristallin semiconducteur | [2010/10] |
| Former [2009/45] | Laserbestrahlungsgerät und Laserbestrahlungsverfahren | ||
| Former [2009/45] | Laser irradiation apparatus and laser irradiation method | ||
| Former [2009/45] | Appareil et procédé d'irradiation laser | Examination procedure | 19.08.2009 | Examination requested [2009/45] | 25.05.2010 | Despatch of a communication from the examining division (Time limit: M04) | 04.10.2010 | Reply to a communication from the examining division | 17.06.2011 | Despatch of a communication from the examining division (Time limit: M04) | 26.10.2011 | Reply to a communication from the examining division | 26.01.2012 | Communication of intention to grant the patent | 04.05.2012 | Fee for grant paid | 04.05.2012 | Fee for publishing/printing paid | Parent application(s) Tooltip | EP05008796.4 / EP1596241 | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20050008796) is 28.04.2006 | Opposition(s) | 28.03.2013 | No opposition filed within time limit [2013/23] | Fees paid | Renewal fee | 19.08.2009 | Renewal fee patent year 03 | 19.08.2009 | Renewal fee patent year 04 | 19.08.2009 | Renewal fee patent year 05 | 25.03.2010 | Renewal fee patent year 06 | 12.04.2011 | Renewal fee patent year 07 | 28.03.2012 | Renewal fee patent year 08 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FI | 27.06.2012 | NL | 27.06.2012 | [2013/15] |
| Former [2012/48] | FI | 27.06.2012 | Documents cited: | Search | [XD]JPH10253916 ; | [A]JPS61156218 (NEC CORP, et al) [A] * abstract *; | [X]US4769750 (MATSUMOTO KOICHI [JP], et al) [X] 1,6 * figure - * * column 1, line 12 - column 2, line 51 * * column 5, line 42 - column 6, line 11 *; | [A]US5153773 (MURAKI MASATO [JP], et al) [A] 1-11* figures 1,3A,3B *; | [A]JP2000111714 (KONISHIROKU PHOTO IND) [A] 3 * abstract *; | US6239913 [ ] (TANAKA KOICHIRO [JP]) [ ] * figures 4A,4B * * column 1, line 6 - line 54 * * column 4, line 1 - line 67 *; | [A]US6373633 (BROWN DANIEL M [US]) [A] 1-11 * abstract * * column 1, line 11 - column 2, line 49 * * figures 1a-c,2a-c,3a,5a-c *; | [X]WO03016963 (HENTZE LISSOTSCHENKO PATENTVER [DE], et al) [X] 1-11 * abstract * * figures 1c,2a-2c * * page 11 - page 13 *; | [A]EP1400832 (SEMICONDUCTOR ENERGY LAB [JP]) [A] 1-11 * abstract * * figures 2A,2B * * paragraph [0035] - paragraph [0040] * | [XD] - PATENT ABSTRACTS OF JAPAN, (19981231), vol. 1998, no. 14, & JP10253916 A 19980925 (SEMICONDUCTOR ENERGY LAB CO LTD) [XD] 1,6 * abstract * | by applicant | JPH10253916 |