Extract from the Register of European Patents

EP About this file: EP2331942

EP2331942 - MEASURING METHOD FOR A SEMICONDUCTOR STRUCTURE [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  08.07.2016
Database last updated on 21.03.2026
Most recent event   Tooltip08.07.2016Application deemed to be withdrawnpublished on 10.08.2016  [2016/32]
Applicant(s)For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27c
80686 München / DE
For all designated states
Albert-Ludwigs-Universität Freiburg
Fahnenbergplatz
79098 Freiburg / DE
[N/P]
Former [2011/24]For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastrasse 27c
80686 München / DE
For all designated states
Albert-Ludwigs-Universität Freiburg
Fahnenbergplatz
79098 Freiburg / DE
Inventor(s)01 / WURFEL, Peter, Wilhelm
Oppelner Strasse 15, D
76139 Karlsruhe / DE
02 / SCHUBERT, Martin
Erlenweg 30
79238 Ehrenkirchen / DE
03 / KASEMANN, Martin
Freiburger Strasse 10
79211 Denzlingen / DE
04 / WARTA, Wilhelm
Falkenbergstrasse 30
79110 Freiburg / DE
 [2011/28]
Former [2011/24]01 / WURFEL, Peter, Wilhelm
Oppelner Strasse 15, D
76139 Karlsruhe / DE
02 / SCHUBERT, Martin
Schlossbergring 12
79098 Freiburg / DE
03 / KASEMANN, Martin
Freiburger Strasse 10
79211 Denzlingen / DE
04 / WARTA, Wilhelm
Falkenbergstrasse 30
79110 Freiburg / DE
Representative(s)LBP Lemcke, Brommer & Partner Patentanwälte mbB
Siegfried-Kühn-Straße 4
76135 Karlsruhe / DE
[N/P]
Former [2011/24]Lemcke, Brommer & Partner
Patentanwälte Bismarckstrasse 16
76133 Karlsruhe / DE
Application number, filing date09778178.528.08.2009
[2011/24]
WO2009EP06247
Priority number, dateDE2008104488129.08.2008         Original published format: DE102008044881
[2011/24]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO2010022962
Date:04.03.2010
Language:DE
[2010/09]
Type: A1 Application with search report 
No.:EP2331942
Date:15.06.2011
Language:DE
The application published by WIPO in one of the EPO official languages on 04.03.2010 takes the place of the publication of the European patent application.
[2011/24]
Search report(s)International search report - published on:EP04.03.2010
ClassificationIPC:G01N21/64, G01N21/66, G01N21/95
[2011/24]
CPC:
G01N21/6489 (EP); G01N21/66 (EP); G01N21/9501 (EP)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2011/24]
TitleGerman:MESSVERFAHREN FÜR EINE HALBLEITERSTRUKTUR[2011/24]
English:MEASURING METHOD FOR A SEMICONDUCTOR STRUCTURE[2011/24]
French:PROCÉDÉ DE MESURE POUR UNE STRUCTURE SEMI-CONDUCTRICE[2011/24]
Entry into regional phase28.03.2011National basic fee paid 
28.03.2011Designation fee(s) paid 
28.03.2011Examination fee paid 
Examination procedure28.03.2011Examination requested  [2011/24]
20.05.2011Amendment by applicant (claims and/or description)
01.03.2016Application deemed to be withdrawn, date of legal effect  [2016/32]
31.03.2016Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2016/32]
Fees paidRenewal fee
15.08.2011Renewal fee patent year 03
14.08.2012Renewal fee patent year 04
11.07.2013Renewal fee patent year 05
05.08.2014Renewal fee patent year 06
Penalty fee
Additional fee for renewal fee
31.08.201507   M06   Not yet paid
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Cited inInternational search[XP]   KIRCHARTZ T ET AL: "Note on the interpretation of electroluminescence images using their spectral information", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 92, no. 12, 1 December 2008 (2008-12-01), pages 1621 - 1627, XP025679280, ISSN: 0927-0248, [retrieved on 20080830] [XP] 1-15 * the whole document *

DOI:   http://dx.doi.org/10.1016/j.solmat.2008.07.013
 [XDY]   WRFEL P ET AL: "Diffusion lengths of silicon solar cells from luminescence images", JOURNAL OF APPLIED PHYSICS, vol. 101, 27 July 2007 (2007-07-27), pages 123110 - 1, XP002552875 * the whole document * [Y] 15

DOI:   http://dx.doi.org/10.1063/1.2749201
 [X]   CHIH HSIN WANG ET AL: "MINORITY-CARRIER LIFETIME AND SURFACE RECOMBINATION VELOCITY MEASUREMENT BY FREQUENCY-DOMAIN PHOTOLUMINESCENCE", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 38, no. 9, 1 September 1991 (1991-09-01), pages 2169 - 2180, XP000219057, ISSN: 0018-9383 [X] 1,2,9-12 * paragraph [000B]; figures 9-11 *

DOI:   http://dx.doi.org/10.1109/16.83745
 [X]   SAUER R ET AL: "Dislocation-related photoluminescence in silicon", APPL. PHYS. A, vol. 36, 1985, pages 1 - 13, XP002560378 [X] 1 * paragraph [0004]; figure 10 *

DOI:   http://dx.doi.org/10.1007/BF00616453
 [A]   TAKAHASHI Y ET AL.: "Precise analysis of surface recombination velocity in crystalline silicon solar cells using electroluminescence", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 46, no. 47, 30 November 2007 (2007-11-30), Japan, pages L1149 - L1151, XP002560377 [A] 1-15 * the whole document *

DOI:   http://dx.doi.org/10.1143/JJAP.46.L1149
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