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EP2352182
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EP Citations: EP2352182
| Cited in | Search | Type: | Patent literature | Publication No.: | JP2008218645
[XI] (ROHM CO LTD et al.) [X] 1-5,7-19,21 * paragraph [0020] - paragraph [0027]; figure 3 * * paragraph [0028] - paragraph [0033]; figure 4 * * paragraph [0034] - paragraph [0042] * * paragraph [0046] *[I] 6,20 | Type: | Patent literature | Publication No.: | EP1814164
[A] (SUMITOMO ELECTRIC INDUSTRIES et al.) [A] 20 * paragraph [0036] * | Type: | Patent literature | Publication No.: | JP2008109066
[I] (ROHM CO LTD et al.) [I] 1-21 * paragraph [0021] - paragraph [0041]; figures 1-3 * * paragraph [0051] - paragraph [0087]; figures 11-13 * | Type: | Patent literature | Publication No.: | US2008128729
[A] (OKAMOTO KUNIYOSHI et al.) [A] 1-19,21 * paragraph [0031] - paragraph [0042] * * paragraph [0017] - paragraph [0030]; figure 1 * | Type: | Patent literature | Publication No.: | US6162656
[A] (KUNISATO TATSUYA et al.) [A] 1,4,6,7,11,14,21 * column 1, line 45 - line 48 * | Type: | Non-patent literature | Publication information: | [A] WU J ET AL: "Small band gap bowing in In1-xGaxN alloys", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 80, no. 25, 24 June 2002 (2002-06-24), pages 4741 - 4743, XP012031257, ISSN: 0003-6951, DOI: 10.1063/1.1489481 [A] 1,3,8,12,21 * equation (1);; figure 2 * | DOI: | http://dx.doi.org/10.1063/1.1489481 | Type: | Non-patent literature | Publication information: | [A] HITOSHI SATO ET AL: "High power and high efficiency green light emitting diode on free-standing semipolar (1122) bulk GaN substrate", PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, WILEY - V C H VERLAG, DE, vol. 1, no. 4, 15 July 2007 (2007-07-15), pages 162 - 164, XP002636795, ISSN: 1862-6254, [retrieved on 20070615], DOI: 10.1002/PSSR.200701098 [A] 1,3,8,12,21 * page 164, column 1, line 6 - line 10 * | DOI: | http://dx.doi.org/10.1002/pssr.200701098 | Type: | Non-patent literature | Publication information: | [A] TYAGI A ET AL: "Stimulated Emission at Blue-green (480nm) and Green (514nm) Wavelentghs from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures", APPLIED PHYSICS EXPRESS, JAPAN SOCIETY OF APPLIED PHYSICS; JP, JP, vol. 1, no. 9, 5 September 2008 (2008-09-05), pages 91103 - 1, XP001516610, ISSN: 1882-0778, DOI: 10.1143/APEX.1.091103 [A] 1,21 * pages 091103-2, column 2, line 40 - line 41 * | DOI: | http://dx.doi.org/10.1143/APEX.1.091103 |