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Extract from the Register of European Patents

EP About this file: EP2249380

EP2249380 - Method for cutting semiconductor substrate [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  12.09.2014
Database last updated on 16.09.2024
Most recent event   Tooltip15.07.2016Lapse of the patent in a contracting state
New state(s): TR		published on 17.08.2016  [2016/33]
Applicant(s)For all designated states
Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi, Shizuoka 435-8558 / JP
[N/P]
Former [2010/45]For all designated states
Hamamatsu Photonics K.K.
1126-1 Ichino-cho, Hamamatsu-shi
Shizuoka 435-8558 / JP
Inventor(s)01 / Fukuyo, Fumitsugu
c/o Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
02 / Fukumitsu, Kenshi
c/o Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
03 / Uchiyama, Naoki
c/o Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
04 / Sugiura, Ryuji
c/o Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
 [2012/49]
Former [2010/45]01 / Fukuyo, Fumitsugu
/o Hamamatsu Photonics K.K. 1126-1, Ichino-cho Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
02 / Fukumitsu, Kenshi
/o Hamamatsu Photonics K.K. 1126-1, Ichino-cho Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
03 / Uchiyama, Naoki
/o Hamamatsu Photonics K.K. 1126-1, Ichino-cho Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
04 / Sugiura, Ryuji
/o Hamamatsu Photonics K.K. 1126-1, Ichino-cho Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstraße 4
80802 München / DE
[N/P]
Former [2013/45]Grünecker, Kinkeldey, Stockmair & Schwanhäusser
Leopoldstrasse 4
80802 München / DE
Former [2010/45]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date10009049.711.09.2003
[2010/45]
Priority number, dateJP2002035160003.12.2002         Original published format: JP 2002351600
[2010/45]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2249380
Date:10.11.2010
Language:EN
[2010/45]
Type: A3 Search report 
No.:EP2249380
Date:31.08.2011
Language:EN
[2011/35]
Type: B1 Patent specification 
No.:EP2249380
Date:06.11.2013
Language:EN
[2013/45]
Search report(s)(Supplementary) European search report - dispatched on:EP03.08.2011
ClassificationIPC:H01L21/301, B28D5/00, B23K26/40, B23K101/40, B23K26/08
[2010/45]
CPC:
B23K26/0853 (EP,US); H01L21/302 (KR); H01L21/2633 (US);
B23K26/40 (EP,US); B23K26/53 (EP,US); B28D1/221 (EP,US);
H01L21/6835 (EP,US); H01L21/6836 (EP,US); H01L21/78 (EP,US);
H01L24/27 (EP,US); H01L24/29 (EP,US); H01L24/83 (EP,US);
B23K2101/40 (EP,US); B23K2103/50 (EP,US); H01L2221/68327 (EP,US);
H01L2221/68336 (EP,US); H01L2224/274 (EP,US); H01L2224/2919 (EP,US);
H01L2224/83191 (EP,US); H01L2224/8385 (EP,US); H01L2924/01005 (EP,US);
H01L2924/01006 (EP,US); H01L2924/01011 (EP,US); H01L2924/01013 (EP,US);
H01L2924/01015 (EP,US); H01L2924/01023 (EP,US); H01L2924/01027 (EP,US);
H01L2924/0103 (EP,US); H01L2924/01033 (EP,US); H01L2924/01039 (EP,US);
H01L2924/0106 (EP,US); H01L2924/01074 (EP,US); H01L2924/01075 (EP,US);
H01L2924/01078 (EP,US); H01L2924/01082 (EP,US); H01L2924/07802 (EP,US);
H01L2924/10329 (EP,US); H01L2924/12042 (EP,US); H01L2924/12043 (EP,US);
H01L2924/351 (EP,US) (-)
C-Set:
H01L2224/2919, H01L2924/00 (US,EP);
H01L2924/12042, H01L2924/00 (US,EP);
H01L2924/12043, H01L2924/00 (EP,US);
H01L2924/3512, H01L2924/00 (EP,US);
H01L2924/351, H01L2924/00 (US,EP)
(-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   RO,   SE,   SI,   SK,   TR [2013/45]
Former [2011/28]
Former [2010/45]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  SE,  SI,  SK,  SM,  TR 
TitleGerman:Verfahren zum Schneiden eines Halbleitersubstrats[2010/45]
English:Method for cutting semiconductor substrate[2010/45]
French:Méthode de découpe de substrat semi-conducteur[2010/45]
Examination procedure29.02.2012Examination requested  [2012/15]
10.04.2012Despatch of communication that the application is deemed to be withdrawn, reason: reply to the Extended European Search Report/Written Opinion of the International Searching Authority/International Preliminary Examination Report/Supplementary international search report not received in time
19.06.2012Amendment by applicant (claims and/or description)
08.11.2012Communication of intention to grant the patent
01.03.2013Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
21.03.2013Communication of intention to grant the patent
31.07.2013Fee for grant paid
31.07.2013Fee for publishing/printing paid
Parent application(s)   TooltipEP03812274.3  / EP1580800
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20030812274) is  08.02.2010
Opposition(s)07.08.2014No opposition filed within time limit [2014/42]
Request for further processing for:The application is deemed to be withdrawn due to failure to reply to the Extended European Search Report/Written Opinion of the International Searching Authority/International Preliminary Examination Report/Supplementary international search report/Supplementary European search report
19.06.2012Request for further processing filed
19.06.2012Full payment received (date of receipt of payment)
Request granted
06.07.2012Decision despatched
Fees paidRenewal fee
31.08.2010Renewal fee patent year 03
31.08.2010Renewal fee patent year 04
31.08.2010Renewal fee patent year 05
31.08.2010Renewal fee patent year 06
31.08.2010Renewal fee patent year 07
29.09.2010Renewal fee patent year 08
28.09.2011Renewal fee patent year 09
27.09.2012Renewal fee patent year 10
26.09.2013Renewal fee patent year 11
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU11.09.2003
AT06.11.2013
BG06.11.2013
CY06.11.2013
CZ06.11.2013
DK06.11.2013
EE06.11.2013
FI06.11.2013
MC06.11.2013
RO06.11.2013
SE06.11.2013
SI06.11.2013
SK06.11.2013
TR06.11.2013
GR07.02.2014
PT06.03.2014
[2016/33]
Former [2016/32]HU11.09.2003
AT06.11.2013
BG06.11.2013
CY06.11.2013
CZ06.11.2013
DK06.11.2013
EE06.11.2013
FI06.11.2013
MC06.11.2013
RO06.11.2013
SE06.11.2013
SI06.11.2013
SK06.11.2013
GR07.02.2014
PT06.03.2014
Former [2016/31]AT06.11.2013
BG06.11.2013
CY06.11.2013
CZ06.11.2013
DK06.11.2013
EE06.11.2013
FI06.11.2013
MC06.11.2013
RO06.11.2013
SE06.11.2013
SI06.11.2013
SK06.11.2013
GR07.02.2014
PT06.03.2014
Former [2016/28]AT06.11.2013
BG06.11.2013
CZ06.11.2013
DK06.11.2013
EE06.11.2013
FI06.11.2013
MC06.11.2013
RO06.11.2013
SE06.11.2013
SI06.11.2013
SK06.11.2013
GR07.02.2014
PT06.03.2014
Former [2016/25]AT06.11.2013
BG06.11.2013
CZ06.11.2013
DK06.11.2013
EE06.11.2013
FI06.11.2013
MC06.11.2013
RO06.11.2013
SE06.11.2013
SI06.11.2013
SK06.11.2013
PT06.03.2014
Former [2015/20]AT06.11.2013
CZ06.11.2013
DK06.11.2013
EE06.11.2013
FI06.11.2013
MC06.11.2013
RO06.11.2013
SE06.11.2013
SI06.11.2013
SK06.11.2013
PT06.03.2014
Former [2015/14]AT06.11.2013
CZ06.11.2013
DK06.11.2013
EE06.11.2013
FI06.11.2013
RO06.11.2013
SE06.11.2013
SI06.11.2013
SK06.11.2013
PT06.03.2014
Former [2014/41]AT06.11.2013
CZ06.11.2013
DK06.11.2013
EE06.11.2013
FI06.11.2013
RO06.11.2013
SE06.11.2013
SK06.11.2013
PT06.03.2014
Former [2014/37]AT06.11.2013
CZ06.11.2013
EE06.11.2013
FI06.11.2013
RO06.11.2013
SE06.11.2013
SK06.11.2013
PT06.03.2014
Former [2014/36]AT06.11.2013
EE06.11.2013
FI06.11.2013
SE06.11.2013
PT06.03.2014
Former [2014/28]AT06.11.2013
FI06.11.2013
SE06.11.2013
PT06.03.2014
Former [2014/24]AT06.11.2013
FI06.11.2013
SE06.11.2013
Former [2014/22]FI06.11.2013
SE06.11.2013
Documents cited:Search[Y]WO0222301  (HAMAMATSU PHOTONICS KK [JP], et al) [Y] 1 * the whole document *;
 [YP]EP1338371  (HAMAMATSU PHOTONICS KK [JP]) [YP] 1 * the whole document *;
 [Y]JP2002226796  (HITACHI CHEMICAL CO LTD) [Y] 1 * the whole document *
by applicantJP2002158276
 JP2000104040
    - "Silicon Processing Characteristic Evaluation by Picosecond Pulse Laser", PREPRINTS OF THE NATIONAL MEETINGS OF JAPAN WELDING SOCIETY, (200004), vol. 66, pages 72 - 73
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.