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Extract from the Register of European Patents

EP About this file: EP2284872

EP2284872 - Method for cutting semiconductor substrate [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  07.11.2014
Database last updated on 18.11.2024
Most recent event   Tooltip15.07.2016Lapse of the patent in a contracting state
New state(s): TR		published on 17.08.2016  [2016/33]
Applicant(s)For all designated states
Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi, Shizuoka 435-8558 / JP
[N/P]
Former [2011/07]For all designated states
Hamamatsu Photonics K.K.
1126-1 Ichino-cho, Hamamatsu-shi
Shizuoka 435-8558 / JP
Inventor(s)01 / Fukuyo, Fumitsugu
Hamamatsu Photonics K. K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
02 / Fukumitsu, Kenshi
Hamamatsu Photonics K. K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
03 / Uchiyama, Naoki
Hamamatsu Photonics K. K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
04 / Sugiura, Ryuji
Hamamatsu Photonics K. K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
 [2014/01]
Former [2011/07]01 / Fukuyo, Fumitsugu
Hamamatsu Photonics K. K. 1126-1, Ichino-cho Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
02 / Fukumitsu, Kenshi
Hamamatsu Photonics K. K. 1126-1, Ichino-cho Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
03 / Uchiyama, Naoki
Hamamatsu Photonics K. K. 1126-1, Ichino-cho Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
04 / Sugiura, Ryuji
Hamamatsu Photonics K. K. 1126-1, Ichino-cho Higashi-ku
Hamamatsu-shi Shizuoka 435-8558 / JP
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstraße 4
80802 München / DE
[N/P]
Former [2014/01]Grünecker, Kinkeldey, Stockmair & Schwanhäusser
Leopoldstrasse 4
80802 München / DE
Former [2011/07]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date10014153.011.09.2003
[2011/07]
Priority number, dateJP2002035160003.12.2002         Original published format: JP 2002351600
[2011/07]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2284872
Date:16.02.2011
Language:EN
[2011/07]
Type: A3 Search report 
No.:EP2284872
Date:07.09.2011
Language:EN
[2011/36]
Type: B1 Patent specification 
No.:EP2284872
Date:01.01.2014
Language:EN
[2014/01]
Search report(s)(Supplementary) European search report - dispatched on:EP04.08.2011
ClassificationIPC:H01L21/301, B28D5/00, B23K26/38, B23K101/40, B23K26/08
[2011/07]
CPC:
B23K26/0853 (EP,US); H01L21/302 (KR); H01L21/2633 (US);
B23K26/40 (EP,US); B23K26/53 (EP,US); B28D1/221 (EP,US);
H01L21/6835 (EP,US); H01L21/6836 (EP,US); H01L21/78 (EP,US);
H01L24/27 (EP,US); H01L24/29 (EP,US); H01L24/83 (EP,US);
B23K2101/40 (EP,US); B23K2103/50 (EP,US); H01L2221/68327 (EP,US);
H01L2221/68336 (EP,US); H01L2224/274 (EP,US); H01L2224/2919 (EP,US);
H01L2224/83191 (EP,US); H01L2224/8385 (EP,US); H01L2924/01005 (EP,US);
H01L2924/01006 (EP,US); H01L2924/01011 (EP,US); H01L2924/01013 (EP,US);
H01L2924/01015 (EP,US); H01L2924/01023 (EP,US); H01L2924/01027 (EP,US);
H01L2924/0103 (EP,US); H01L2924/01033 (EP,US); H01L2924/01039 (EP,US);
H01L2924/0106 (EP,US); H01L2924/01074 (EP,US); H01L2924/01075 (EP,US);
H01L2924/01078 (EP,US); H01L2924/01082 (EP,US); H01L2924/07802 (EP,US);
H01L2924/10329 (EP,US); H01L2924/12042 (EP,US); H01L2924/12043 (EP,US);
H01L2924/351 (EP,US) (-)
C-Set:
H01L2224/2919, H01L2924/00 (US,EP);
H01L2924/12042, H01L2924/00 (US,EP);
H01L2924/12043, H01L2924/00 (EP,US);
H01L2924/3512, H01L2924/00 (EP,US);
H01L2924/351, H01L2924/00 (US,EP)
(-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   RO,   SE,   SI,   SK,   TR [2011/07]
TitleGerman:Verfahren zum Schneiden eines Halbleitersubstrats[2011/07]
English:Method for cutting semiconductor substrate[2011/07]
French:Procédé de découpe d'un substrat à semi-conducteur[2011/07]
Examination procedure02.03.2012Amendment by applicant (claims and/or description)
02.03.2012Examination requested  [2012/16]
03.12.2012Communication of intention to grant the patent
01.03.2013Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
12.06.2013Communication of intention to grant the patent
14.10.2013Fee for grant paid
14.10.2013Fee for publishing/printing paid
Parent application(s)   TooltipEP03812274.3  / EP1580800
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20030812274) is  08.02.2010
Opposition(s)02.10.2014No opposition filed within time limit [2014/50]
Fees paidRenewal fee
29.10.2010Renewal fee patent year 03
29.10.2010Renewal fee patent year 04
29.10.2010Renewal fee patent year 05
29.10.2010Renewal fee patent year 06
29.10.2010Renewal fee patent year 07
29.10.2010Renewal fee patent year 08
28.09.2011Renewal fee patent year 09
27.09.2012Renewal fee patent year 10
26.09.2013Renewal fee patent year 11
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU11.09.2003
AT01.01.2014
BG01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
MC01.01.2014
RO01.01.2014
SE01.01.2014
SI01.01.2014
SK01.01.2014
TR01.01.2014
GR02.04.2014
PT02.05.2014
IE11.09.2014
LU11.09.2014
[2016/33]
Former [2016/32]HU11.09.2003
AT01.01.2014
BG01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
MC01.01.2014
RO01.01.2014
SE01.01.2014
SI01.01.2014
SK01.01.2014
GR02.04.2014
PT02.05.2014
IE11.09.2014
LU11.09.2014
Former [2016/28]AT01.01.2014
BG01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
MC01.01.2014
RO01.01.2014
SE01.01.2014
SI01.01.2014
SK01.01.2014
GR02.04.2014
PT02.05.2014
IE11.09.2014
LU11.09.2014
Former [2016/25]AT01.01.2014
BG01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
MC01.01.2014
RO01.01.2014
SE01.01.2014
SI01.01.2014
SK01.01.2014
PT02.05.2014
IE11.09.2014
LU11.09.2014
Former [2015/37]AT01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
MC01.01.2014
RO01.01.2014
SE01.01.2014
SI01.01.2014
SK01.01.2014
PT02.05.2014
IE11.09.2014
LU11.09.2014
Former [2015/24]AT01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
MC01.01.2014
RO01.01.2014
SE01.01.2014
SI01.01.2014
SK01.01.2014
PT02.05.2014
LU11.09.2014
Former [2015/22]AT01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
MC01.01.2014
RO01.01.2014
SE01.01.2014
SK01.01.2014
PT02.05.2014
LU11.09.2014
Former [2015/20]AT01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
MC01.01.2014
RO01.01.2014
SE01.01.2014
SK01.01.2014
PT02.05.2014
Former [2014/50]AT01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
RO01.01.2014
SE01.01.2014
SK01.01.2014
PT02.05.2014
Former [2014/49]AT01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
RO01.01.2014
SE01.01.2014
PT02.05.2014
Former [2014/48]AT01.01.2014
CY01.01.2014
CZ01.01.2014
DK01.01.2014
EE01.01.2014
FI01.01.2014
SE01.01.2014
PT02.05.2014
Former [2014/37]AT01.01.2014
CY01.01.2014
FI01.01.2014
SE01.01.2014
PT02.05.2014
Documents cited:Search[XY]WO0222301  (HAMAMATSU PHOTONICS KK [JP], et al) [X] 1-4 * the whole document * [Y] 5;
 [XPY]EP1338371  (HAMAMATSU PHOTONICS KK [JP]) [XP] 1-4 * the whole document * [Y] 5;
 [YA]US5534102  (KADONO NOBUAKI [JP], et al) [Y] 5 * the whole document * [A] 1;
 [A]US2002025432  (NOGUCHI HAYATO [JP], et al) [A] 1,5 * column 1, line 19 - line 42; figures 3A, 3B *;
 [A]JP2002226796  (HITACHI CHEMICAL CO LTD) [A] 1,5 * abstract *;
 [AD]JP2002158276  (HITACHI CHEMICAL CO LTD) [AD] 1 * the whole document *
by applicantJP2002158276
 JP2000104040
    - "Silicon Processing Characteristic Evaluation by Picosecond Pulse Laser", PREPRINTS OF THE NATIONAL MEETINGS OF JAPAN WELDING SOCIETY, (200004), vol. 66, pages 72 - 73
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.