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EP2330616
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EP About this file: EP2330616
| EP2330616 - A method of rapidly thermally annealing multilayer wafers with an edge [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 27.09.2013 Database last updated on 24.08.2024 | Most recent event Tooltip | 27.09.2013 | Application deemed to be withdrawn | published on 30.10.2013 [2013/44] | Applicant(s) | For all designated states Soitec Parc Technologique des Fontaines Chemin des Franques 38190 Bernin / FR | [2012/19] |
| Former [2011/23] | For all designated states S.O.I. Tec Silicon on Insulator Technologies Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin / FR | Inventor(s) | 01 /
Neyret, Eric 2 rue Lesdiguières 38360 Sassenage / FR | 02 /
Malleville, Christophe 90, rue du Château 38660 La Terrasse / FR | [2011/23] | Representative(s) | Regimbeau 20, rue de Chazelles 75847 Paris Cedex 17 / FR | [2012/49] |
| Former [2011/23] | Collin, Jérôme, et al Cabinet Régimbeau 20, rue de Chazelles 75847 Paris Cedex 17 / FR | Application number, filing date | 10176486.8 | 03.11.2003 | [2011/23] | Priority number, date | FR20020013810 | 05.11.2002 Original published format: FR 0213810 | FR20030000286 | 13.01.2003 Original published format: FR 0300286 | [2011/23] | Previously filed application, date | EP20030772490 | 03.11.2003 | [2011/23] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2330616 | Date: | 08.06.2011 | Language: | EN | [2011/23] | Type: | A3 Search report | No.: | EP2330616 | Date: | 07.12.2011 | Language: | EN | [2011/49] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 09.11.2011 | Classification | IPC: | H01L21/324, H01L21/762, H01L21/67 | [2011/49] | CPC: |
H01L21/3247 (EP,US);
H01L21/324 (KR);
H01L21/67103 (EP,US);
H01L21/76251 (EP,US);
H01L21/76254 (EP,US)
|
| Former IPC [2011/23] | H01L21/324, H01L21/00, H01L21/762 | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR [2011/23] | Title | German: | Verfahren zum schnellen thermischen Behandeln von Mehrschichtwafern mit einer Kante | [2011/23] | English: | A method of rapidly thermally annealing multilayer wafers with an edge | [2011/23] | French: | Procédé de recuit thermique rapide de tranches à couronne | [2011/23] | Examination procedure | 13.09.2010 | Examination requested [2011/23] | 03.01.2012 | Amendment by applicant (claims and/or description) | 09.01.2013 | Despatch of a communication from the examining division (Time limit: M04) | 20.04.2013 | Application deemed to be withdrawn, date of legal effect [2013/44] | 25.06.2013 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2013/44] | Parent application(s) Tooltip | EP03772490.3 / EP1559136 | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20030772490) is 16.07.2008 | Fees paid | Renewal fee | 13.09.2010 | Renewal fee patent year 03 | 13.09.2010 | Renewal fee patent year 04 | 13.09.2010 | Renewal fee patent year 05 | 13.09.2010 | Renewal fee patent year 06 | 13.09.2010 | Renewal fee patent year 07 | 29.11.2010 | Renewal fee patent year 08 | 28.11.2011 | Renewal fee patent year 09 | Penalty fee | Additional fee for renewal fee | 30.11.2012 | 10 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]WO0169656 (MATTSON THERMAL PRODUCTS INC [US]) [Y] 5-11 * page 14, lines 7-18; figure 1 *; | [XYI]EP1189266 (SHINETSU HANDOTAI KK [JP]) [X] 1,15 * paragraphs [0080] - [0089]; figure 8 * [Y] 5-11 [I] 12-14; | [Y]EP1197989 (USHIO ELECTRIC INC [JP]) [Y] 5-11* figures 1-3,7-8 * |