EP2270871 - WIDE BANDGAP HEMTS WITH SOURCE CONNECTED FIELD PLATES [Right-click to bookmark this link] | |||
Former [2011/01] | Wide bandgap HEMTs with source connected field plates | ||
[2022/49] | Status | No opposition filed within time limit Status updated on 17.11.2023 Database last updated on 17.07.2024 | |
Former | The patent has been granted Status updated on 09.12.2022 | ||
Former | Grant of patent is intended Status updated on 07.11.2022 | ||
Former | Examination is in progress Status updated on 09.12.2016 | Most recent event Tooltip | 24.05.2024 | Lapse of the patent in a contracting state New state(s): IT | published on 26.06.2024 [2024/26] | Applicant(s) | For all designated states Cree, Inc. 4600 Silicon Drive Durham, NC 27703 / US | [2011/01] | Inventor(s) | 01 /
Wu, Yifeng 528 Fireside Lane Goleta, CA 93117 / US | 02 /
Parikh, Primit 6832 Shadowbrook Drive Goleta, CA 93117 / US | 03 /
Mishra, Umesh 2040 Creekside Drive Montecito, CA 93108 / US | 04 /
Moore, Marcia 1438 West Valerio Street Santa Barbara, CA 93101 / US | [2011/01] | Representative(s) | FRKelly Waterways House Grand Canal Quay Dublin D02 PD39 / IE | [N/P] |
Former [2023/02] | FRKelly 27 Clyde Road Dublin D04 F838 / IE | ||
Former [2013/38] | Brophy, David Timothy, et al FRKelly 27 Clyde Road Ballsbridge Dublin 4 / IE | ||
Former [2011/01] | Boyce, Conor FRKelly 27 Clyde Road Ballsbridge Dublin 4 / IE | Application number, filing date | 10183607.0 | 24.03.2005 | [2011/01] | Priority number, date | US20040570519P | 11.05.2004 Original published format: US 570519 P | US20040958970 | 04.10.2004 Original published format: US 958970 | [2011/01] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2270871 | Date: | 05.01.2011 | Language: | EN | [2011/01] | Type: | B1 Patent specification | No.: | EP2270871 | Date: | 11.01.2023 | Language: | EN | [2023/02] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.12.2010 | Classification | IPC: | H01L29/778, H01L29/06, H01L29/40, H01L29/20, H01L29/417, H01L29/423 | [2022/45] | CPC: |
H01L29/402 (EP,KR,US);
H01L29/7787 (EP,KR,US);
H01L29/2003 (EP,KR,US);
H01L29/41725 (EP,US);
H01L29/42316 (EP,US);
H01L29/66462 (KR)
|
Former IPC [2011/01] | H01L29/778, H01L29/06 | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR [2023/02] |
Former [2011/01] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | HEMTS MIT GROSSEM BANDABSTAND MIT SOURCE-VERBUNDENEN FELDPLATTEN | [2022/45] | English: | WIDE BANDGAP HEMTS WITH SOURCE CONNECTED FIELD PLATES | [2022/49] | French: | TRANSISTORS A HAUTE MOBILITE D'ELECTRONS A GRANDE LARGEUR DE BANDE INTERDITE COMPORTANT DES PLAQUES DE CHAMP RELIEES A LA SOURCE | [2022/45] |
Former [2011/01] | Hemts mit grossem Bandabstand mit source-verbundenen Feldplatten | ||
Former [2011/01] | Wide bandgap HEMTs with source connected field plates | ||
Former [2011/01] | Transistors a haute mobilite d'electrons a grande largeur de bande interdite comportant des plaques de champ reliees a la source | Examination procedure | 04.07.2011 | Amendment by applicant (claims and/or description) | 04.07.2011 | Examination requested [2011/32] | 13.12.2016 | Despatch of a communication from the examining division (Time limit: M06) | 13.06.2017 | Reply to a communication from the examining division | 21.02.2019 | Despatch of a communication from the examining division (Time limit: M04) | 24.06.2019 | Reply to a communication from the examining division | 02.01.2020 | Despatch of a communication from the examining division (Time limit: M06) | 03.06.2020 | Reply to a communication from the examining division | 08.10.2020 | Despatch of a communication from the examining division (Time limit: M04) | 19.01.2021 | Reply to a communication from the examining division | 19.02.2021 | Despatch of a communication from the examining division (Time limit: M04) | 27.05.2021 | Reply to a communication from the examining division | 04.10.2022 | Cancellation of oral proceeding that was planned for 10.10.2022 | 10.10.2022 | Date of oral proceedings (cancelled) | 08.11.2022 | Communication of intention to grant the patent | 02.12.2022 | Fee for grant paid | 02.12.2022 | Fee for publishing/printing paid | 02.12.2022 | Receipt of the translation of the claim(s) | Parent application(s) Tooltip | EP05731252.2 / EP1751803 | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20050731252) is 30.07.2008 | Opposition(s) | 12.10.2023 | No opposition filed within time limit [2023/51] | Fees paid | Renewal fee | 31.01.2011 | Renewal fee patent year 03 | 31.01.2011 | Renewal fee patent year 04 | 31.01.2011 | Renewal fee patent year 05 | 31.01.2011 | Renewal fee patent year 06 | 29.03.2011 | Renewal fee patent year 07 | 14.03.2012 | Renewal fee patent year 08 | 11.03.2013 | Renewal fee patent year 09 | 12.03.2014 | Renewal fee patent year 10 | 10.03.2015 | Renewal fee patent year 11 | 10.03.2016 | Renewal fee patent year 12 | 10.03.2017 | Renewal fee patent year 13 | 13.03.2018 | Renewal fee patent year 14 | 13.03.2019 | Renewal fee patent year 15 | 27.03.2020 | Renewal fee patent year 16 | 29.03.2021 | Renewal fee patent year 17 | 28.03.2022 | Renewal fee patent year 18 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | AT | 11.01.2023 | CZ | 11.01.2023 | DK | 11.01.2023 | EE | 11.01.2023 | ES | 11.01.2023 | FI | 11.01.2023 | IT | 11.01.2023 | LT | 11.01.2023 | MC | 11.01.2023 | NL | 11.01.2023 | PL | 11.01.2023 | RO | 11.01.2023 | SE | 11.01.2023 | SI | 11.01.2023 | SK | 11.01.2023 | IE | 24.03.2023 | LU | 24.03.2023 | BE | 31.03.2023 | CH | 31.03.2023 | FR | 31.03.2023 | LI | 31.03.2023 | GB | 11.04.2023 | GR | 12.04.2023 | IS | 11.05.2023 | PT | 11.05.2023 | [2024/26] |
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Former [2023/31] | NL | 11.01.2023 | Documents cited: | Search | [Y]US2002005528 (NAGAHARA MASAKI [JP]) [Y] 7 * paragraph [0029]; figures 2,3,5,15-19 * * abstract *; | [XYI]US2002137318 (PEAKE STEVEN T [GB], et al) [X] 1,3,6 * paragraphs [0041] , [0066]; figure 4 * [Y] 2,7 [I] 4,5; | [A]EP1336989 (INFINEON TECHNOLOGIES AG [DE]) [A] 1-7* Fig. 3 and corresponding text. *; | [A]US2003222327 (YAMAGUCHI MASAKAZU [JP], et al) [A] 1-7 * abstract *; | [XP]WO2004068590 (TOSHIBA KK [JP], et al) [XP] 1-7 * abstract *; | [YA] - SAITO W ET AL, "DESIGN AND DEMONSTRATION OF HIGH BREAKDOWN VOLTAGE GAN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) USING FIELD PLATE STRUCTURE FOR POWER ELECTRONICS APPLICATIONS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, (200404), vol. 43, no. 4B, ISSN 0021-4922, pages 2239 - 2242, XP001227744 [Y] 2 * the whole document * [A] 1,3-7 DOI: http://dx.doi.org/10.1143/JJAP.43.2239 | Examination | US6100571 | US6445038 | by applicant | US5192987 | US5290393 | US5296395 | US5393993 | US5523589 | US5686738 | US5739554 | US6316793 | US2002167023 | US2003020092 | US6548333 | US6586781 | - B. GELMONT; K. KIM; M. SHUR; MONTE CARLO, "Simulation of Electron Transport in Gallium Nitride", J.APPL.PHYS., (1993), vol. 74, pages 1818 - 1821 | - R. GASKA ET AL., "Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates", APPL.PHYS.LETT., (1998), vol. 72, pages 707 - 709 | - WU ET AL., "GaN-Based FETs for Microwave Power Amplification", IEICE TRANS. ELECTRON., (1999), vol. E-82-C, pages 1895 - 1905 | - Y.F. WU ET AL., "Very-High Power Density A1GaN/GaN HEMTs", IEEE TRANS.ELECTRON.DEV., (2001), vol. 48, pages 586 - 590 | - M. MICOVIC ET AL., "A1GaN/GaN Heterojunction Field Effect Transistors Grown by Nitrogen Plasma Assisted Molecular Beam Epitaxy", IEEE TRANS.ELECTRON.DEV., (2001), vol. 48, pages 591 - 596 | - GASKA ET AL., "High-Temperature Performance of A1GaN/GaN HFET's on SiC Substrates", IEEE ELECTRON DEVICE LETTERS, (1997), vol. 18, pages 492 - 494 | - PING ET AL., "DC and Microwave Performance of High Current AIGaN Heterostructure Field Effect Transistors Grown on P-type SiC Substrates", IEEE ELECTRON DEVICES LETTERS, (1998), vol. 19, pages 54 - 56 | - G. SULLIVAN ET AL., "High Power 10-GHz Operation of AlGaN HFET's in Insulating SiC", IEEE ELECTRON DEVICE LETTERS, (1998), vol. 19, pages 198 - 200 | - WU ET AL., "High Al-Content A1GaN/GaN MODFETs for Ultrahigh Performance", IEEE ELECTRON DEVICE LETTERS, (1998), vol. 19, pages 50 - 53 | - S KAMALKAR; U.K. MISHRA, "Very High Voltage A1GaN/GaN High Electron Mobility Transistors Using a Field Plate Deposited on a Stepped Insulator", SOLID STATE ELECTRONICS, (2001), vol. 45, pages 1645 - 1662 |