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EP2312023
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EP About this file: EP2312023
| EP2312023 - Compound single crystal and method for producing the same [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 07.02.2014 Database last updated on 28.02.2026 | Most recent event Tooltip | 07.02.2014 | Application deemed to be withdrawn | published on 12.03.2014 [2014/11] | Applicant(s) | For all designated states Hoya Corporation 7-5, Naka-Ochiai 2-chome Shinjuku-ku Tokyo 161-8525 / JP | [2011/16] | Inventor(s) | 01 /
Yagi, Kuniaki c/o Hoya Corporation 7-5, Naka-Ochiai 2-chome Shinjuku-ku Tokyo 161-8525 / JP | 02 /
Suzuki, Takahisa c/o Hoya Corporation 7-5, Naka-Ochiai 2-chome Shinjuku-ku Tokyo 161-8525 / JP | 03 /
Yanagisawa, Yasutaka c/o Hoya Corporation 7-5, Naka-Ochiai 2-chome Shinjuku-ku Tokyo 161-8525 / JP | 04 /
Hirose, Masao c/o Hoya Corporation 7-5, Naka-Ochiai 2-chome Shinjuku-ku Tokyo 161-8525 / JP | 05 /
Sato, Noriko c/o Hoya Corporation 7-5, Naka-Ochiai 2-chome Shinjuku-ku Tokyo 161-8525 / JP | 06 /
Koizumi, Junya c/o Hoya Corporation 7-5, Naka-Ochiai 2-chome Shinjuku-ku Tokyo 161-8525 / JP | 07 /
Nagasawa, Hiroyuki c/o Hoya Corporation 7-5, Naka-Ochiai 2-chome Shinjuku-ku Tokyo 161-8525 / JP | [2011/27] | Representative(s) | dompatent Partnerschaft von Patentanwälten und Rechtsanwälten mbB Deichmannhaus am Dom Bahnhofsvorplatz 1 50667 Köln / DE | [N/P] |
| Former [2011/16] | von Kreisler Selting Werner Deichmannhaus am Dom Bahnhofsvorplatz 1 50667 Köln / DE | Application number, filing date | 10187610.0 | 14.10.2010 | [2011/16] | Priority number, date | JP20090238765 | 15.10.2009 Original published format: JP 2009238765 | [2011/16] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2312023 | Date: | 20.04.2011 | Language: | EN | [2011/16] | Type: | A3 Search report | No.: | EP2312023 | Date: | 03.10.2012 | Language: | EN | [2012/40] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.09.2012 | Classification | IPC: | C30B25/02, C30B25/18, C30B29/06, C30B29/36 | [2011/16] | CPC: |
C30B29/06 (EP,US);
C30B25/02 (EP,US);
C30B25/18 (EP,US);
C30B29/36 (EP,US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2011/16] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Verbindungseinkristall und Herstellungsverfahren dafür | [2011/16] | English: | Compound single crystal and method for producing the same | [2011/16] | French: | Monocristal composé et son procédé de fabrication | [2011/16] | Examination procedure | 04.05.2011 | Despatch of communication that the application is refused, reason: Examination on filing A.90(5) {1} | 28.03.2013 | Examination requested [2013/20] | 03.04.2013 | Amendment by applicant (claims and/or description) | 29.05.2013 | Despatch of a communication from the examining division (Time limit: M04) | 09.10.2013 | Application deemed to be withdrawn, date of legal effect [2014/11] | 06.11.2013 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2014/11] | Appeal following examination | 20.05.2011 | Appeal received | 20.05.2011 | Statement of grounds filed | 07.06.2011 | Interlocutory revision of appeal | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 29.05.2013 | Fees paid | Renewal fee | 30.10.2012 | Renewal fee patent year 03 | Penalty fee | Additional fee for renewal fee | 31.10.2013 | 04 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY] JP2002201099 (TOSHIBA CORP et al.) | [X] JP2002201098 (TOSHIBA CORP et al.) | [X] EP1288346 (HOYA CORP et al.) | [Y] HIROYUKI NAGASAWA ET AL: "Reducing Planar Defects in 3C SiC", CHEMICAL VAPOR DEPOSITION, WILEY-VCH VERLAG, WEINHEIM, DE, vol. 12, 1 January 2006 (2006-01-01), pages 502 - 508, XP008132124, ISSN: 0948-1907 | by applicant | JP3576432 | JP3761418 | K. SHIBAHARA, APPLIED PHYS. LETT., vol. 50, 1987, pages 1888 - 1890 | APPLIED PHYS. LETT., vol. 50, 1987, pages 1888 - 1890 |