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Extract from the Register of European Patents

EP About this file: EP2251464

EP2251464 - Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  22.11.2019
Database last updated on 16.11.2024
FormerThe patent has been granted
Status updated on  14.12.2018
FormerGrant of patent is intended
Status updated on  30.08.2018
FormerExamination is in progress
Status updated on  27.01.2017
Most recent event   Tooltip01.07.2022Lapse of the patent in a contracting state
New state(s): MK		published on 03.08.2022  [2022/31]
Applicant(s)For all designated states
NGK Insulators, Ltd.
2-56 Suda-cho, Mizuho-ku
Nagoya-City, Aichi Pref. 467-8530 / JP
[2010/46]
Inventor(s)01 / Ichimura, Mikiya
c/o NGK Insulators, Ltd.
2-56 Suda-cho
Mizzho-ku
Nagoya City, Aichi-ken, 467-8530 / JP
02 / Miyoshi, Makoto
c/o NGK Insulators, Ltd.
2-56 Suda-cho
Mizzho-ku
Nagoya City, Aichi-ken, 467-8530 / JP
03 / Tanaka, Mitsuhiro
c/o NGK Insulators, Ltd.
2-56 Suda-cho
Mizzho-ku
Nagoya City, Aichi-ken, 467-8530 / JP
 [2019/03]
Former [2010/46]01 / Ichimura, Mikiya
c/o NGK Insulators, Ltd. 2-56 Suda-cho, Mizzho-ku
Nagoya City, Aichi-ken, 467-8530 / JP
02 / Miyoshi, Makoto
c/o NGK Insulators, Ltd. 2-56 Suda-cho, Mizzho-ku
Nagoya City, Aichi-ken, 467-8530 / JP
03 / Tanaka, Mitsuhiro
c/o NGK Insulators, Ltd. 2-56 Suda-cho, Mizzho-ku
Nagoya City, Aichi-ken, 467-8530 / JP
Representative(s)Mewburn Ellis LLP
Aurora Building
Counterslip
Bristol BS1 6BX / GB
[N/P]
Former [2019/03]Naylor, Matthew John, et al
Mewburn Ellis LLP
City Tower
40 Basinghall Street
London EC2V 5DE / GB
Former [2010/46]Paget, Hugh Charles Edward, et al
Mewburn Ellis LLP 33 Gutter Lane London
EC2V 8AS / GB
Application number, filing date10250839.727.04.2010
[2010/46]
Priority number, dateJP2009011558212.05.2009         Original published format: JP 2009115582
[2010/46]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2251464
Date:17.11.2010
Language:EN
[2010/46]
Type: A3 Search report 
No.:EP2251464
Date:26.01.2011
[2011/04]
Type: B1 Patent specification 
No.:EP2251464
Date:16.01.2019
Language:EN
[2019/03]
Search report(s)(Supplementary) European search report - dispatched on:EP29.12.2010
ClassificationIPC:C30B25/02, H01L21/335, H01L29/778, C30B29/38, H01L21/02
[2010/46]
CPC:
C30B25/02 (EP,US); C30B19/00 (EP,US); C30B23/02 (EP,US);
C30B29/403 (EP,US); C30B29/406 (EP,US); H01L21/0237 (EP,US);
H01L21/0242 (EP,US); H01L21/02458 (EP,US); H01L21/0254 (EP,US);
H01L21/0262 (EP,US); H01L29/2003 (EP,US); H01L29/7786 (EP,US) (-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2019/03]
Former [2010/46]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  SE,  SI,  SK,  SM,  TR 
TitleGerman:Epitaxiesubstrat für Halbleiterbauelement, Halbleiterbauelement und Verfahren zur Herstellung eines Epitaxiesubstrats für ein Halbleiterbauelement[2010/46]
English:Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device[2010/46]
French:Substrat épitaxial pour dispositif semi-conducteur, dispositif semi-conducteur et procédé de fabrication d'un substrat épitaxial pour dispositif semi-conducteur[2010/46]
Examination procedure19.07.2011Amendment by applicant (claims and/or description)
19.07.2011Examination requested  [2011/35]
27.01.2017Despatch of a communication from the examining division (Time limit: M04)
06.06.2017Reply to a communication from the examining division
31.08.2018Communication of intention to grant the patent
06.12.2018Fee for grant paid
06.12.2018Fee for publishing/printing paid
06.12.2018Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  27.01.2017
Opposition(s)17.10.2019No opposition filed within time limit [2019/52]
Fees paidRenewal fee
20.03.2012Renewal fee patent year 03
22.04.2013Renewal fee patent year 04
25.03.2014Renewal fee patent year 05
24.04.2015Renewal fee patent year 06
21.03.2016Renewal fee patent year 07
25.04.2017Renewal fee patent year 08
11.04.2018Renewal fee patent year 09
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU27.04.2010
AT16.01.2019
CY16.01.2019
CZ16.01.2019
DK16.01.2019
EE16.01.2019
ES16.01.2019
FI16.01.2019
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LT16.01.2019
LV16.01.2019
MC16.01.2019
MK16.01.2019
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PL16.01.2019
RO16.01.2019
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BG16.04.2019
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GB27.04.2019
IE27.04.2019
LU27.04.2019
BE30.04.2019
CH30.04.2019
FR30.04.2019
LI30.04.2019
IS16.05.2019
PT16.05.2019
[2022/31]
Former [2021/34]HU27.04.2010
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DK16.01.2019
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BG16.04.2019
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GB27.04.2019
LU27.04.2019
BE30.04.2019
CH30.04.2019
FR30.04.2019
LI30.04.2019
IS16.05.2019
PT16.05.2019
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GB27.04.2019
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BE30.04.2019
CH30.04.2019
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PT16.05.2019
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BG16.04.2019
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Documents cited:Search[Y]EP1801865  (NAT INST INF & COMM TECH [JP]) [Y] 1-13 * paragraph [0041] - paragraph [0089]; figures 1,7,8 *;
 [Y]  - WANG B Z ET AL, "The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE; The growth of high-Al-content InAlGaN quaternary alloys", JOURNAL OF PHYSICS D. APPLIED PHYSICS, IOP PUBLISHING, BRISTOL, GB, (20070207), vol. 40, no. 3, doi:10.1088/0022-3727/40/3/012, ISSN 0022-3727, pages 765 - 768, XP020112093 [Y] 1-13 * the Abstract; Section "2. Experimental procedure"; Figures 1-4; Table 1 *

DOI:   http://dx.doi.org/10.1088/0022-3727/40/3/012
 [YA]  - SUIHKONEN S ET AL, "MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 310, no. 7-9, doi:10.1016/J.JCRYSGRO.2007.11.122, ISSN 0022-0248, (20080401), pages 1777 - 1780, (20071124), XP022697529 [Y] 7-11 * the Abstract; Sections "1. Introduction"; "2. Experimental procedure" * [A] 1-6,12,13

DOI:   http://dx.doi.org/10.1016/j.jcrysgro.2007.11.122
ExaminationJPH11204885
by applicantJP2007324263
    - TOSHIHIDE KIKKAWA, "Highly Reliable 250 W High Electron Mobility Transistor Power Amplifier", JPN. J. APPL. PHYS., (2005), vol. 44, no. 7A, pages 4896 - 4901
    - STACIA KELLER; YI-FENG WU; GIACINTA PARISH; NAIQIAN ZIANG; JANE J. XU; BERND P. KELLER; STEVEN P. DENBAARS; UMESH K; MISHRA, "Gallium Nitride Based High Power Heterojunction Field Effect Transistors: process Development and Present Status at UCSB", IEEE TRANS. ELECTRON DEVICES, (2001), vol. 48, page 552
    - MAKOTO MIYOSHI ET AL., "Characterization of Different-Al-Content AIGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy", JPN. J. APPL. PHYS., (2004), vol. 43, no. 12, pages 7939 - 7943
    - YANG LIU ET AL., "Novel Quaternary AIInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate", JPN. J. APPL. PHYS., (2005), vol. 45, no. 7, pages 5728 - 5731
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.