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EP2394307
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EP About this file: EP2394307
| EP2394307 - NEGATIVELY CHARGED PASSIVATION LAYER IN A PHOTOVOLTAIC CELL [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 21.02.2014 Database last updated on 02.11.2024 | Most recent event Tooltip | 21.02.2014 | Application deemed to be withdrawn | published on 26.03.2014 [2014/13] | Applicant(s) | For all designated states Applied Materials, Inc. 3050 Bowers Avenue Santa Clara, CA 95054 / US | [2011/50] | Inventor(s) | 01 /
BORDEN, Peter, G. 118 Seville Way San Mateo CA 94402 / US | 02 /
OLSEN, Christopher, S. 38642 Moore Drive Fremont CA 94536 / US | [2011/50] | Representative(s) | Zimmermann & Partner Patentanwälte mbB Postfach 330 920 80069 München / DE | [N/P] |
| Former [2011/50] | Zimmermann & Partner Postfach 330 920 80069 München / DE | Application number, filing date | 10739163.3 | 05.02.2010 | WO2010US23311 | Priority number, date | US20090367064 | 06.02.2009 Original published format: US 367064 | [2011/50] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO2010091247 | Date: | 12.08.2010 | Language: | EN | [2010/32] | Type: | A2 Application without search report | No.: | EP2394307 | Date: | 14.12.2011 | Language: | EN | The application published by WIPO in one of the EPO official languages on 12.08.2010 takes the place of the publication of the European patent application. | [2011/50] | Search report(s) | International search report - published on: | KR | 02.12.2010 | (Supplementary) European search report - dispatched on: | EP | 13.02.2013 | Classification | IPC: | H01L31/042, H01L31/0216, H01L31/18 | [2013/11] | CPC: |
H01L31/02167 (EP,US);
H01L31/04 (KR);
H01L31/0216 (KR);
H01L31/18 (KR);
H01L31/1868 (EP,US);
Y02E10/50 (EP,US);
Y02P70/50 (EP,US)
(-)
|
| Former IPC [2011/50] | H01L31/042 | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR [2011/50] | Title | German: | NEGATIV GELADENE PASSIVIERUNGSSCHICHT IN EINER PV-ZELLE | [2011/50] | English: | NEGATIVELY CHARGED PASSIVATION LAYER IN A PHOTOVOLTAIC CELL | [2011/50] | French: | COUCHE DE PASSIVATION À CHARGE NÉGATIVE DANS UNE CELLULE PHOTOVOLTAÏQUE | [2011/50] | Entry into regional phase | 05.09.2011 | National basic fee paid | 05.09.2011 | Search fee paid | 05.09.2011 | Designation fee(s) paid | 05.09.2011 | Examination fee paid | Examination procedure | 05.09.2011 | Amendment by applicant (claims and/or description) | 05.09.2011 | Examination requested [2011/50] | 17.09.2013 | Application deemed to be withdrawn, date of legal effect [2014/13] | 24.10.2013 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2014/13] | Fees paid | Renewal fee | 07.02.2012 | Renewal fee patent year 03 | 07.02.2013 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]US2005022863 (AGOSTINELLI GUIDO [BE], et al) [Y] 9,15 * abstract * * paragraphs [0001] , [0005] , [0012] , [0014] , [0017] , [0019] , [0021] , [0078] , [0086] - [0088] - [0102] , [0103] , [0105] , [0126] , [0142] *; | [Y]US2004094400 (ICHIKI KASUNORI [JP], et al) [Y] 10,11 * abstract * * paragraphs [0001] , [0006] , [0008] , [0026] , [0039] - [0044] *; | [XYI] - GLUNZ S W ET AL, "Field-effect passivation of the SiO2Si interface", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19990701), vol. 86, no. 1, doi:10.1063/1.370784, ISSN 0021-8979, pages 683 - 691, XP012047927 [X] 1-4,7 * abstract * * chapters I-III and IVA-B * [Y] 9-11,15 [I] 5,6,8,12,14 DOI: http://dx.doi.org/10.1063/1.370784 | [A] - HOEX B ET AL, "Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20060727), vol. 89, no. 4, doi:10.1063/1.2240736, ISSN 0003-6951, pages 42112 - 042112, XP012088131 [A] 9,15 * abstract * * page 1, column 2, paragraphs 2,3 * * page 3, column 1, paragraphs 1,2 * DOI: http://dx.doi.org/10.1063/1.2240736 | [A] - JARAN SRITHARATHIKHUN ET AL, "Surface Passivation of Crystalline and Polycrystalline Silicon Using Hydrogenated Amorphous Silicon Oxide Film", JAPANESE JOURNAL OF APPLIED PHYSICS, (20070601), vol. 46, no. 6A, doi:10.1143/JJAP.46.3296, ISSN 0021-4922, pages 3296 - 3300, XP055051556 [A] 1-15 * the whole document * DOI: http://dx.doi.org/10.1143/JJAP.46.3296 | International search | [A]JPH0837316 (MITSUI TOATSU CHEMICALS); | [A]JPH1070297 (MITSUI PETROCHEMICAL IND); | [A]JPH07106612 (TONEN CORP) |